JPH04177743A - Plate surface inspecting device - Google Patents

Plate surface inspecting device

Info

Publication number
JPH04177743A
JPH04177743A JP30479990A JP30479990A JPH04177743A JP H04177743 A JPH04177743 A JP H04177743A JP 30479990 A JP30479990 A JP 30479990A JP 30479990 A JP30479990 A JP 30479990A JP H04177743 A JPH04177743 A JP H04177743A
Authority
JP
Japan
Prior art keywords
light
inspected
reflected light
beams
reflected
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP30479990A
Other languages
Japanese (ja)
Inventor
Miki Fukushima
幹 福島
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP30479990A priority Critical patent/JPH04177743A/en
Publication of JPH04177743A publication Critical patent/JPH04177743A/en
Pending legal-status Critical Current

Links

Classifications

    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy

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  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Photovoltaic Devices (AREA)

Abstract

PURPOSE:To detect very small variation of a plate surface by detecting reflected light of the first scanning beam from the surface to be inspected and, turning off the second beam when the light quantity of the reflected light exceeds a fixed level. CONSTITUTION:The optical axes of two beams 21 and 22 are precisely set so that the two beams can adjoin each other on a surface 37 to be inspected. The two beams are made incident to a lens 7 after they are reflected by the surface 37 to be inspected and the beam 21 is passed through a wavelength selecting filter 10. The beam 22 is reflected by the filter 10 and made incident to a photodetector 11. The beam 22 scans 25usec prior to the beam 21 which actually makes surface inspections and, when the quantity of the reflected light made incident to the photodetector 11 is so large that a photomultiplier tube 9 is saturated, a light controller 12 turns off the beam 21 after 25usec. Therefore, even such weak randomly reflected light as that from a scratch on the silicon surface of a solar battery panel can be detected.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は平板表面検査装置に関し、特に太陽電池パネル
のシリコン表面と電極部のように表面での光の反射率の
変化が大きい部分を有する平板のキズ等の検査に適用し
うる平板表面検査装置に関する。
[Detailed Description of the Invention] [Field of Industrial Application] The present invention relates to a flat plate surface inspection device, and particularly to a flat plate surface inspection device that has a portion where the reflectance of light changes greatly on the surface, such as the silicon surface and electrode portion of a solar panel. The present invention relates to a flat plate surface inspection device that can be applied to inspecting flat plates for scratches, etc.

〔従来の技術〕[Conventional technology]

従来の記述としては、例えば、特開昭59−68653
号公報に示されているような物体表面の平板表面検査装
置がある。第5図は従来の平板表面検査装置を示す断面
図である。第5図に示す平板表面検査装置は、レーザ発
振器31と、変調器32と、コリーメータ33と、遮光
体34と、受光体35と、受光体35が受けた光量に応
して適宜の処理をする処理装置36とを備えている。
As a conventional description, for example, Japanese Patent Application Laid-Open No. 59-68653
There is a flat plate surface inspection device for the surface of an object as shown in the above publication. FIG. 5 is a sectional view showing a conventional flat plate surface inspection device. The flat plate surface inspection apparatus shown in FIG. 5 includes a laser oscillator 31, a modulator 32, a collimator 33, a light shield 34, a photoreceptor 35, and appropriate processing according to the amount of light received by the photoreceptor 35. A processing device 36 is provided.

レーザ発振器3]から発振されるレーザー光を変調器3
2で変調してコリメータ33に入れ、ここでレーサー光
を平行光にして物体37の表面に照射する。
The laser beam emitted from the laser oscillator 3 is transmitted to the modulator 3.
2 and enters the collimator 33, where the laser light is converted into parallel light and irradiated onto the surface of the object 37.

照射された光は物体の被検査面37で反射される。反射
光の反射角度は物体の表面の状態により異なる。表面に
傷が無く、塵芥も(4着していない正常状態では反射光
の反射パターンが一定面積に収まるが、表面に傷がつい
ていたり、塵芥が付着している異常状態では反射光の散
乱か大きくなり、正常時の反射パターン面積の外側にま
で散乱する。
The irradiated light is reflected by the surface 37 of the object to be inspected. The reflection angle of reflected light varies depending on the condition of the surface of the object. In a normal state where there are no scratches on the surface and no dust (4), the reflection pattern of the reflected light falls within a certain area, but in an abnormal state where the surface is scratched or has dust attached, the reflected light may be scattered. It becomes larger and is scattered outside the normal reflection pattern area.

そこで、正常時の反射光パターン上に少くともそのパタ
ーンの面積より広い面積の遮光体34を設けて正常時の
反射光を遮断し、遮光体34の外(に1)に受光体35
を設けて、物体37の異常時に遮光体34の外側にまで
散乱する異常反射光たけを当該受光体35により受光す
る。
Therefore, a light shield 34 having an area at least larger than the area of the pattern is provided on the reflected light pattern during normal operation to block the reflected light during normal operation.
is provided, and when the object 37 is abnormal, the amount of abnormal reflected light scattered to the outside of the light shielding body 34 is received by the light receiving body 35.

受光された光は処理装置36によって適宜に処理される
The received light is appropriately processed by a processing device 36.

〔発明が解決しようとする課題〕[Problem to be solved by the invention]

上述した従来の平板表面検査装置は、単一の受光体て乱
反射光を受光しており、微弱光を検出するように受光体
アンプのケインを設定すると、例えば太陽電池パネルに
お←Jる電極部のような部分からの乱反射光では飽和状
態となり検査か中断される。また逆に電極部のような部
分からの乱反射光量に合わせてゲインを設定すると、例
えば太陽電池パネルにおけるシリコン表面」二のキズの
ような部分からの微弱な乱反射光を検出てきないという
欠点があった。
In the conventional flat plate surface inspection device described above, a single photoreceptor receives diffusely reflected light, and when the cane of the photoreceptor amplifier is set to detect weak light, for example, an electrode attached to a solar panel If the light is diffusely reflected from a part such as a part, the test will become saturated and the inspection will be interrupted. Conversely, if the gain is set according to the amount of diffusely reflected light from parts such as electrodes, there is a drawback that, for example, weak diffusely reflected light from parts such as scratches on the silicon surface of a solar panel cannot be detected. Ta.

〔課題を解決するための手段〕[Means to solve the problem]

本発明の平板表面検査装置は、第1の光線を出社する第
1の光源と、前記第1の光線と波長の異なる第2の光線
を出射する第2の光源と、前記第1および第2の線を被
検査面上て偏向走査する光偏向器と、前記第1および第
2の光線を同一方向に向け前記第1の光線か前記第2の
光線よりも前記光偏向器による走査方向に微小に後れる
ようにして前記被検査面に照射させる光学系と、被検査
面上からの前記第1および第2の光線の反射光を入射し
集光するレンズ系と、前記レンズ系て集光された光を前
記第1の光線の部分および前記第2の光線の部分に分離
する光分離器と、前記レンズ系で集光された光のうち前
記第1の光線の正反射部分を遮光するマスクと、前記レ
ンズ系で集光された光のうち前記第1の光線の乱反射部
分を入射する第1の光検出器と、前記レンズ系て就航さ
れた光のうち前記第2の光線の部分を入射する光検出器
と、前記第2の光検出器からの出力信号に応して前記第
1の光源を変調する光制御器とを含んで構成される。
The flat plate surface inspection apparatus of the present invention includes: a first light source that emits a first light beam; a second light source that emits a second light beam having a different wavelength from the first light beam; an optical deflector that deflects and scans a beam of light on a surface to be inspected; and an optical deflector that directs the first and second light beams in the same direction so that the scanning direction of the optical deflector is higher than that of the first light beam or the second light beam. an optical system that irradiates the surface to be inspected so as to be slightly backward; a lens system that enters and collects the reflected light of the first and second light beams from the surface to be inspected; a light separator that separates the emitted light into the first light beam portion and the second light beam portion; and blocking a specular reflection portion of the first light beam of the light collected by the lens system. a first photodetector that receives the diffusely reflected portion of the first light beam out of the light collected by the lens system; the light detector, and a light controller that modulates the first light source in accordance with an output signal from the second light detector.

〔実施例〕〔Example〕

次に、本発明の実施例について、図面を参照して詳細に
説明する。
Next, embodiments of the present invention will be described in detail with reference to the drawings.

第1図は本発明の−・実施例を示す斜視図である。FIG. 1 is a perspective view showing an embodiment of the present invention.

第1図は平板表面検査装置は、He−Neレーザと発振
波長の異なる半導体レーザ発振器1と、半導体レーザ発
振器1と直角に配置されるHeNeレーザ発振器2と、
これら2つのレーザ発振器からそれぞれ出射されるビー
ム21.ビーム22との光軸を同一方向に合わせるフィ
ルター3と、ビーム21およびビーム22を被検査面上
で集光するためのレンズ4と、ビーム21およびビーム
22を被検査面」二で走査するためのポリゴンミラー5
と、ポリゴンミラー5て変更されたビーム21およびビ
ーム22を被検査面37上に走査方向に対し直角に入射
させるシリンドリカルレンズ6と、被検査面37上で反
射したビーl\2]およびビーム22を入射するレンズ
7と、レンズ7の焦点に設置されビーム21の正反射光
を遮光するマスク8と、ビーム21の乱反射光を入射す
る光電子倍増管つと、レンズ7と、マスク8との間に設
置されビーム21を透過しビーム22を反射する波長選
択フィルター10と、波長選択フィルター10で反射さ
れたビーム22を入射し光電子6一 倍増管9と、フィルター10に関し互いに共役な位置に
設置される光検出器11と、光検出器11からの信号を
入力し、一定時間後に半導体レヘザ介振2))]を′変
ri!rlする信号を出力する光制御器12とをイ曲え
ている。
In FIG. 1, a flat plate surface inspection apparatus includes a semiconductor laser oscillator 1 having an oscillation wavelength different from that of a He-Ne laser, and a HeNe laser oscillator 2 disposed at right angles to the semiconductor laser oscillator 1.
Beams 21. each emitted from these two laser oscillators. A filter 3 for aligning the optical axis with the beam 22 in the same direction, a lens 4 for focusing the beams 21 and 22 on the surface to be inspected, and a lens 4 for scanning the beams 21 and 22 on the surface to be inspected. polygon mirror 5
, a cylindrical lens 6 that makes the beams 21 and 22 modified by the polygon mirror 5 enter the surface to be inspected 37 at right angles to the scanning direction, and beams 21 and 22 reflected on the surface to be inspected 37. A mask 8 is installed at the focal point of the lens 7 to block the specularly reflected light of the beam 21, and a photomultiplier tube that enters the diffusely reflected light of the beam 21 is provided between the lens 7 and the mask 8. A wavelength selection filter 10 is installed to transmit the beam 21 and reflect the beam 22, and a photoelectron 6 multiplier tube 9 is installed at a position conjugate to each other with respect to the filter 10, which receives the beam 22 reflected by the wavelength selection filter 10. The photodetector 11 and the signal from the photodetector 11 are input, and after a certain period of time, the semiconductor laser oscillation 2)) is changed! The optical controller 12 that outputs the rl signal is arranged in a different direction.

次に、第1図と第2図とを恐照しなから、木実施例の平
板表面検査装置の動作を順を追って説明する。
Next, with reference to FIGS. 1 and 2, the operation of the flat plate surface inspection apparatus of the wooden embodiment will be explained step by step.

半導体レーザ1から出射されるビーム21と、He N
 eレーザ2から出射されるビーム22とは、フィルタ
ー3によりビーム2]は透過し、ビーノ\22は直角に
反射されて同一方向の光軸となるこのときに第2図に示
すように2つのビーム21.22の光軸は、被検査面3
7上で2つのビームが互いに隣接するよう微小に異なる
よう設定する。2つのビーム21.22はレンズ4によ
り被検査面37上でそのヒーl\径が中1100uにな
るよう集光され、ポリコンミラー5により偏向される。
The beam 21 emitted from the semiconductor laser 1 and HeN
The beam 22 emitted from the e-laser 2 is transmitted by the filter 3, and the beam 22 is reflected at right angles to form optical axes in the same direction.At this time, as shown in FIG. The optical axis of the beams 21 and 22 is the surface to be inspected 3.
7, the two beams are set to be slightly different so that they are adjacent to each other. The two beams 21 and 22 are focused by the lens 4 on the surface to be inspected 37 so that the heel diameter thereof becomes 1100 u, and are deflected by the polycon mirror 5.

偏向されたビームは、シリントリ力ルレンス6を経て走
査方向に直角に被検査面37に入射する。このときの2
つのビーム間距離を1100uに設定する。2つのビー
ムは被検査面37で反射されレンズ7に入射する。ビー
ム21は波長選択フィルター10を透過し、正反射光を
マスク9で遮光されて乱反射光が光電子倍増管9に入射
し、光電子倍増管9の出力の大小によって被検査面37
上の状態を検査できる。
The deflected beam passes through the cylindrical force lens 6 and enters the surface to be inspected 37 at right angles to the scanning direction. 2 at this time
The distance between the two beams is set to 1100u. The two beams are reflected by the surface to be inspected 37 and enter the lens 7. The beam 21 passes through the wavelength selection filter 10, the specularly reflected light is blocked by the mask 9, and the diffusely reflected light enters the photomultiplier tube 9.
You can check the above condition.

一方、ビーム22は波長選択フィルター10で反射され
光検出器1]に入射する。光検出器11に入射する光量
が一定値以上のときは光制御器12により半導体レーザ
発振器1の出射を一定時間後にオフにする。ビーム22
は、ビーム21より1100u先を走査している。走査
速度が4m/secのとき、1100uは25 use
cである。ビーム22は実際に表面検査を行うビーム2
1より25usec先を走査し、光電子倍増管9が飽和
するほどの反射光量が光検出器]1に入射した場合、2
 S usec後にビーム21をオフにする。
On the other hand, the beam 22 is reflected by the wavelength selection filter 10 and enters the photodetector 1]. When the amount of light incident on the photodetector 11 is above a certain value, the light controller 12 turns off the emission of the semiconductor laser oscillator 1 after a certain period of time. beam 22
is scanning 1100u beyond the beam 21. When the scanning speed is 4m/sec, 1100u is 25 uses
It is c. Beam 22 is beam 2 that actually performs surface inspection.
When scanning 25 usec ahead of 1 and the amount of reflected light entering the photodetector 1 is large enough to saturate the photomultiplier tube 9, 2
Turn off the beam 21 after S usec.

光電子倍増管9のゲインの幅が102〜103なのに対
し、例えは太陽電池パネル表面の反射光推圧はシリコン
表面部と電極部で104程度ある。光電子倍増管9てシ
リコン表面部からの反射光を検出するゲインに設定した
とき、電極部からの反射光か入射すると光電子倍増管9
は飽和り7.1確な出力が得られない。これを防ぐため
に電極部からの反射光を検出するゲインに設定した光検
出器で電極部を検知し、ビーム2]が電極部を通過する
間ビーム21をオフにする。
While the gain range of the photomultiplier tube 9 is 102 to 103, for example, the reflected light thrust on the surface of the solar cell panel is about 104 at the silicon surface and electrode portions. When the photomultiplier tube 9 is set to a gain that detects the reflected light from the silicon surface, if the reflected light from the electrode section is incident, the photomultiplier tube 9
7.1 Accurate output cannot be obtained due to saturation. To prevent this, the electrode section is detected by a photodetector set to a gain that detects the reflected light from the electrode section, and the beam 21 is turned off while the beam 2] passes through the electrode section.

第3図にキスのある太陽電池23の模式図を示す。第4
図(a>には例としてシリコン部24上にキスのある場
所での走査のときの反射光Mドパターン(第3図の走査
■)、第4図(1つ)にはシリコン部24と電極部25
の境目ての走査のときの反射光量パターン(第3図の走
査■)、第4図(c)には電極部25上での走査のとき
の反射光量パターン(第3図の走査■)を示す。走査■
では、太陽電池のエツジaおよびbにおいて反射光量が
増大し、キズ26の部分ても反射光量が多くなる。反射
光量を点線に示す光量て区分して2値化することにより
キス26を他のシリコン部分が−つ − ら判別する。走査■で示すようにシリコン部24と電極
部25との境目ての反射光量か走査■でのキス26の場
所での反射光量と等しくなる瞬間がある。
FIG. 3 shows a schematic diagram of a solar cell 23 with a kiss. Fourth
Figure (a) shows an example of the reflected light M pattern when scanning a place where there is a kiss on the silicon part 24 (scanning ■ in Figure 3), and Figure 4 (one) shows the silicon part 24 and Electrode part 25
The reflected light amount pattern when scanning the boundary (scanning ■ in FIG. 3) is shown, and FIG. 4(c) shows the reflected light amount pattern when scanning on the electrode section 25 (scanning ■ in FIG. 3). show. Scan ■
In this case, the amount of reflected light increases at edges a and b of the solar cell, and the amount of reflected light also increases at the scratch 26 portion. The kiss 26 can be distinguished from other silicon parts by dividing the amount of reflected light according to the amount of light indicated by the dotted line and converting it into two values. As shown in scan (2), there is a moment when the amount of reflected light at the boundary between the silicon portion 24 and the electrode portion 25 becomes equal to the amount of reflected light at the kiss 26 in scan (2).

このためシリコン部24と電極部25との境目はつねに
キズと判別される。これを防ぐため走査■に示ずパター
ンの出力の直前直後ではキス判別をキャンセルする。走
査■ては太陽電池上を走査している間、光量か光電子倍
増管9の飽和レベルにあり、このとき光量を光検出器1
]で検出して半導体レーザ発振器1の駆動をオフにする
。その後、光量が走査■に示ずようなシリコン部上の走
査のパターンにもとったことを光検出器1]で検出し、
このとき半導体レーザ発振器1の駆動を再開する。
Therefore, the boundary between the silicon portion 24 and the electrode portion 25 is always determined to be a flaw. In order to prevent this, the kiss determination is canceled immediately before and after the pattern is output, not shown in scanning (3). While scanning the solar cell, the amount of light is at the saturation level of the photomultiplier tube 9, and at this time the amount of light is detected by the photodetector 1.
] and turns off the drive of the semiconductor laser oscillator 1. After that, the photodetector 1] detects that the amount of light has taken up the scanning pattern on the silicon part as shown in scanning (■),
At this time, driving of the semiconductor laser oscillator 1 is restarted.

〔発明の効果〕〔Effect of the invention〕

本発明の平板表面検査装置は、2つのビームと、2つの
光検出器を設け、2つのビームを走査方向に隣接して被
検査面」二を走査し、先に走査されるビームの被検査面
からの反射光を検知し一定−10= 光量以上の場合に、もう一方のビーム(以下検査光とい
う)をオフにすることにより、検査光を検出している光
検出器が飽和するような部分を除去して、他の部分の微
小な表面状態の変化(例えば、太陽電池パネルの電極部
を除去して、シリコ1フ表面部の微小なキス等)を検出
できるという効果がある。
The flat plate surface inspection apparatus of the present invention is provided with two beams and two photodetectors, and scans the surface to be inspected with the two beams adjacent to each other in the scanning direction. When the reflected light from the surface is detected and the amount of light exceeds a certain value of -10, the other beam (hereinafter referred to as the inspection light) is turned off so that the photodetector detecting the inspection light becomes saturated. There is an effect that by removing a portion, it is possible to detect a minute change in the surface condition of another portion (for example, a minute kiss on the surface of the silicon 1 by removing an electrode portion of a solar cell panel).

【図面の簡単な説明】[Brief explanation of drawings]

第1図は本発明の一実施例を示す斜視図、第2図は第1
図に示す実施例ての被検査面上の2つのビームの位置を
示す平面図、第3図はキスのある太陽電池の模式的な平
面図、第4図は太陽電池をビームで走査した時の反射光
値を示す図、第5図は平板表面検査装置の側面図である
。 1・・・半導体レーザ発振器、2・・・He N eレ
ーザ発振器、5・・ポリゴンミラー、7・レンス、8・
・マスク、9・・・光電子倍増管、]0・・・フィルタ
ー、11・・・光検出器、12・・光制御器。
FIG. 1 is a perspective view showing one embodiment of the present invention, and FIG. 2 is a perspective view showing one embodiment of the present invention.
A plan view showing the positions of the two beams on the surface to be inspected in the example shown in the figure, Fig. 3 is a schematic plan view of a solar cell with a kiss, and Fig. 4 shows when the solar cell is scanned with the beam. FIG. 5 is a side view of the flat plate surface inspection apparatus. DESCRIPTION OF SYMBOLS 1...Semiconductor laser oscillator, 2...HeNe laser oscillator, 5...Polygon mirror, 7. Lens, 8.
- Mask, 9... Photomultiplier tube, ]0... Filter, 11... Photodetector, 12... Light controller.

Claims (1)

【特許請求の範囲】[Claims]  第1の光線を出射する第1の光源と、前記第1の光線
と波長の異なる第2の光線を出射する第2の光源と、前
記第1および第2の光線を被検査面上で偏向走査する光
偏向器と、前記第1および第2の光線を同一方向に向け
前記第1の光線が前記第2の光線よりも前記光偏向器に
よる走査方向に微小に後れるようにして前記被検査面に
照射させる光学系と、被検査面上からの前記第1および
第2の光線の反射光を入射し集光するレンズ系と、前記
レンズ系で集光された光を前記第1の光線の部分および
前記第2の光線の部分に分離する光分離器と、前記レン
ズ系で集光された光のうち前記第1の光線の正反射部分
を遮光するマスクと、前記レンズ系で集光された光のう
ち前記第1の光線の乱反射部分を入射する第1の光検出
器と、前記レンズ系で集光された光のうち前記第2の光
線の部分を入射する光検出器と、前記第2の光検出器か
らの出力信号に応じて前記第1の光源を変調する光制御
器とを含むことを特徴とする平板表面検査装置。
a first light source that emits a first light ray; a second light source that emits a second light ray having a different wavelength from the first light ray; and a deflector that deflects the first and second light rays on a surface to be inspected. A scanning optical deflector and the first and second light beams are directed in the same direction so that the first light beam is slightly behind the second light beam in the scanning direction by the optical deflector. an optical system that irradiates the surface to be inspected; a lens system that receives and collects the reflected light of the first and second light beams from the surface to be inspected; a light separator that separates the light beam into a light beam portion and the second light beam portion; a mask that blocks a specularly reflected portion of the first light beam out of the light focused by the lens system; a first photodetector into which a diffusely reflected portion of the first beam of light is incident; a photodetector which receives a portion of the second beam of light collected by the lens system; , and a light controller that modulates the first light source according to an output signal from the second photodetector.
JP30479990A 1990-11-09 1990-11-09 Plate surface inspecting device Pending JPH04177743A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP30479990A JPH04177743A (en) 1990-11-09 1990-11-09 Plate surface inspecting device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP30479990A JPH04177743A (en) 1990-11-09 1990-11-09 Plate surface inspecting device

Publications (1)

Publication Number Publication Date
JPH04177743A true JPH04177743A (en) 1992-06-24

Family

ID=17937382

Family Applications (1)

Application Number Title Priority Date Filing Date
JP30479990A Pending JPH04177743A (en) 1990-11-09 1990-11-09 Plate surface inspecting device

Country Status (1)

Country Link
JP (1) JPH04177743A (en)

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