JPH0416010B2 - - Google Patents

Info

Publication number
JPH0416010B2
JPH0416010B2 JP58079216A JP7921683A JPH0416010B2 JP H0416010 B2 JPH0416010 B2 JP H0416010B2 JP 58079216 A JP58079216 A JP 58079216A JP 7921683 A JP7921683 A JP 7921683A JP H0416010 B2 JPH0416010 B2 JP H0416010B2
Authority
JP
Japan
Prior art keywords
layer
polyimide
etchant
resin layer
photoresist
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58079216A
Other languages
English (en)
Japanese (ja)
Other versions
JPS58218124A (ja
Inventor
Jii Berani Jagudeitsushu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Semiconductor Corp
Original Assignee
National Semiconductor Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by National Semiconductor Corp filed Critical National Semiconductor Corp
Publication of JPS58218124A publication Critical patent/JPS58218124A/ja
Publication of JPH0416010B2 publication Critical patent/JPH0416010B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/68—Organic materials, e.g. photoresists
    • H10P14/683—Organic materials, e.g. photoresists carbon-based polymeric organic materials, e.g. polyimides, poly cyclobutene or PVC
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6342—Liquid deposition, e.g. spin-coating, sol-gel techniques or spray coating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6502—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed before formation of the materials
    • H10P14/6506—Formation of intermediate materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/286—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials
    • H10P50/287—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials by chemical means
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/978—Semiconductor device manufacturing: process forming tapered edges on substrate or adjacent layers

Landscapes

  • Weting (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • ing And Chemical Polishing (AREA)
JP58079216A 1982-05-06 1983-05-06 重合絶縁層のエツチング法およびエツチヤント組成 Granted JPS58218124A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US375575 1982-05-06
US06/375,575 US4411735A (en) 1982-05-06 1982-05-06 Polymeric insulation layer etching process and composition

Publications (2)

Publication Number Publication Date
JPS58218124A JPS58218124A (ja) 1983-12-19
JPH0416010B2 true JPH0416010B2 (enExample) 1992-03-19

Family

ID=23481408

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58079216A Granted JPS58218124A (ja) 1982-05-06 1983-05-06 重合絶縁層のエツチング法およびエツチヤント組成

Country Status (3)

Country Link
US (1) US4411735A (enExample)
JP (1) JPS58218124A (enExample)
DE (2) DE3316041A1 (enExample)

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2095905B (en) * 1981-03-27 1985-01-16 Philips Electronic Associated Infra-red radiation imaging devices and methods for their manufacture
US4487652A (en) * 1984-03-30 1984-12-11 Motorola, Inc. Slope etch of polyimide
EP0177905B1 (de) * 1984-10-09 1990-12-05 Hoechst Japan Kabushiki Kaisha Verfahren zum Entwickeln und zum Entschichten von Photoresistschichten mit quaternären Ammomiumverbindungen
US4827326A (en) * 1987-11-02 1989-05-02 Motorola, Inc. Integrated circuit having polyimide/metal passivation layer and method of manufacture using metal lift-off
DE3740369A1 (de) * 1987-11-25 1989-06-08 Schering Ag Verfahren zur vorbehandlung von kunststoffen
US4857143A (en) * 1988-12-16 1989-08-15 International Business Machines Corp. Wet etching of cured polyimide
US5183534A (en) * 1990-03-09 1993-02-02 Amoco Corporation Wet-etch process and composition
US5091290A (en) * 1990-12-03 1992-02-25 Micron Technology, Inc. Process for promoting adhesion of a layer of photoresist on a substrate having a previous layer of photoresist
US5470693A (en) * 1992-02-18 1995-11-28 International Business Machines Corporation Method of forming patterned polyimide films
US5242864A (en) * 1992-06-05 1993-09-07 Intel Corporation Polyimide process for protecting integrated circuits
US5804090A (en) * 1995-03-20 1998-09-08 Nissan Motor Co., Ltd. Process for etching semiconductors using a hydrazine and metal hydroxide-containing etching solution
US5925260A (en) * 1997-01-02 1999-07-20 Micron Technology, Inc. Removal of polyimide from dies and wafers
KR100837987B1 (ko) * 2000-06-21 2008-06-16 텍사스 인스트루먼츠 인코포레이티드 용해 수지를 이용하는 마이크로 전기기계 시스템 장치의재코팅 방법
US6739931B2 (en) 2000-09-18 2004-05-25 Semiconductor Energy Laboratory Co., Ltd. Display device and method of fabricating the display device
EP1343206B1 (en) * 2002-03-07 2016-10-26 Semiconductor Energy Laboratory Co., Ltd. Light emitting apparatus, electronic apparatus, illuminating device and method of fabricating the light emitting apparatus
US7190335B2 (en) * 2002-03-26 2007-03-13 Semiconductor Energy Laboratory Co., Ltd. Light emitting device and method of manufacturing the same
GB2387026A (en) * 2002-03-28 2003-10-01 Zarlink Semiconductor Ltd Method of coating contact holes in MEMS and micro-machining applications
US7579771B2 (en) 2002-04-23 2009-08-25 Semiconductor Energy Laboratory Co., Ltd. Light emitting device and method of manufacturing the same
US7786496B2 (en) 2002-04-24 2010-08-31 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing same
JP2003317971A (ja) * 2002-04-26 2003-11-07 Semiconductor Energy Lab Co Ltd 発光装置およびその作製方法
US7897979B2 (en) 2002-06-07 2011-03-01 Semiconductor Energy Laboratory Co., Ltd. Light emitting device and manufacturing method thereof
JP4216008B2 (ja) 2002-06-27 2009-01-28 株式会社半導体エネルギー研究所 発光装置およびその作製方法、ならびに前記発光装置を有するビデオカメラ、デジタルカメラ、ゴーグル型ディスプレイ、カーナビゲーション、パーソナルコンピュータ、ｄｖｄプレーヤー、電子遊技機器、または携帯情報端末
JP4373086B2 (ja) 2002-12-27 2009-11-25 株式会社半導体エネルギー研究所 発光装置
JP4308821B2 (ja) * 2003-07-28 2009-08-05 ダウ・コーニング・コーポレイション パターン形成されたシリコーン層をエッチングする方法
JP2005085799A (ja) * 2003-09-04 2005-03-31 Seiko Epson Corp 成膜方法、配線パターンの形成方法、半導体装置の製造方法、電気光学装置、及び電子機器
US20070120089A1 (en) * 2005-11-28 2007-05-31 3M Innovative Properties Company Polymer etchant and method of using same
CN104617111B (zh) * 2015-02-03 2017-08-25 京东方科技集团股份有限公司 基板及其制造方法、显示装置
TWI658936B (zh) * 2018-02-07 2019-05-11 台虹科技股份有限公司 覆蓋膜及其應用

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3179634A (en) * 1962-01-26 1965-04-20 Du Pont Aromatic polyimides and the process for preparing them
US3361589A (en) * 1964-10-05 1968-01-02 Du Pont Process for treating polyimide surface with basic compounds, and polyimide surface having thin layer of polyamide acid
GB1230421A (enExample) * 1967-09-15 1971-05-05
US3767490A (en) * 1971-06-29 1973-10-23 Ibm Process for etching organic coating layers
US3770528A (en) * 1971-09-29 1973-11-06 Martin Processing Co Inc Method for the surface treatment of polyimide materials
US3791848A (en) * 1972-05-19 1974-02-12 Western Electric Co A method of improving the adherence of a metal deposit to a polyimide surface
US3871930A (en) * 1973-12-19 1975-03-18 Texas Instruments Inc Method of etching films made of polyimide based polymers
US4218283A (en) * 1974-08-23 1980-08-19 Hitachi, Ltd. Method for fabricating semiconductor device and etchant for polymer resin
US4113550A (en) * 1974-08-23 1978-09-12 Hitachi, Ltd. Method for fabricating semiconductor device and etchant for polymer resin
DE2541624C2 (de) * 1975-09-18 1982-09-16 Ibm Deutschland Gmbh, 7000 Stuttgart Wässrige Ätzlösung und Verfahren zum Ätzen von Polymerfilmen oder Folien auf Polyimidbasis

Also Published As

Publication number Publication date
DE3348416C2 (de) 1993-10-07
JPS58218124A (ja) 1983-12-19
DE3316041C2 (enExample) 1992-09-17
DE3316041A1 (de) 1983-11-10
US4411735A (en) 1983-10-25

Similar Documents

Publication Publication Date Title
JPH0416010B2 (enExample)
US3962004A (en) Pattern definition in an organic layer
US5482566A (en) Method for removing etching residue using a hydroxylamine-containing composition
JPH05283399A (ja) パターニングされたポリイミド膜の形成方法
JPS63502780A (ja) ポリ（メタクリル酸無水物）レジストの現像方法
CA1155736A (en) Method of etching polyimide
US6000411A (en) Cleaning compositions for removing etching residue and method of using
EP0446032A2 (en) Wet-etch process and composition
US6451223B1 (en) Thinner composition and methods and systems for using the thinner composition
KR19990008362A (ko) 리프트-오프 이미징 프로파일을 얻기 위한 방법
US3767490A (en) Process for etching organic coating layers
CN1241072C (zh) 用于冲洗光致抗蚀剂的稀释剂和处理光致抗蚀剂层的方法
EP0263322B1 (en) Method of making sloped vias
US4971715A (en) Phenolic-free stripping composition and use thereof
US6207358B1 (en) Method of stripping a photoresist from a semiconductor substrate using dimethylacetamide or a combination of monoethanolamine and dimethylsulfoxide
US6319884B2 (en) Method for removal of cured polyimide and other polymers
TWI248138B (en) Electronic device manufacture
KR100582799B1 (ko) 레지스트막박리조성물및이조성물을사용한박막회로소자의제조방법
JP3209918B2 (ja) 剥離液及びそれを使用した半導体装置の製造方法
CN1175320C (zh) 适用于生成亚微米级宽金属线图案的制法
EP0111799B1 (de) Verfahren zur Entwicklung von Reliefstrukturen auf der Basis von strahlungsvernetzten Polymervorstufen hochwärmebeständiger Polymere
US6337174B1 (en) Method of stripping a photoresist from a semiconductor substrate dimethylacetamide or a combination of monoethanolamine and dimethylsulfoxide
JPH02265932A (ja) 有機重合体材料のエッチング方法
EP0224843B1 (en) Method for developing negative photoresists
US4886727A (en) Method for developing negative photoresists