JPH04155925A - Wet etching device - Google Patents
Wet etching deviceInfo
- Publication number
- JPH04155925A JPH04155925A JP28250690A JP28250690A JPH04155925A JP H04155925 A JPH04155925 A JP H04155925A JP 28250690 A JP28250690 A JP 28250690A JP 28250690 A JP28250690 A JP 28250690A JP H04155925 A JPH04155925 A JP H04155925A
- Authority
- JP
- Japan
- Prior art keywords
- wafers
- etching
- discs
- case
- grooves
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000001039 wet etching Methods 0.000 title claims description 6
- 238000005530 etching Methods 0.000 claims abstract description 27
- 239000004065 semiconductor Substances 0.000 claims abstract description 22
- 239000000126 substance Substances 0.000 claims abstract description 6
- 235000012431 wafers Nutrition 0.000 abstract description 29
- 238000000034 method Methods 0.000 abstract description 3
- 230000002401 inhibitory effect Effects 0.000 abstract 1
- 230000000694 effects Effects 0.000 description 2
- 238000011109 contamination Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は半導体装置用のウェットエツチング装置に関す
る。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a wet etching apparatus for semiconductor devices.
従来のウェットエツチング装!は第2図に示すように薬
液を入れたエツチング槽1内に複数の半導体ウェーハが
入れられたマガジンケース3を浸漬し半導体ウェー八表
面をエツチング加工する方式をとっていた。Conventional wet etching! As shown in FIG. 2, a magazine case 3 containing a plurality of semiconductor wafers is immersed in an etching bath 1 containing a chemical solution, and the surface of the semiconductor wafers is etched.
上述した従来のエツチング槽の構造ではマガジンケース
内で半導体ウェーハの表面のマガジンケースの溝側壁5
a又は5bに接していたり、またエツチング中に発生す
る気泡6が半導体ウェーハとマガジンケースの溝側壁の
間に入り込んで薬液が半導体ウェーハに充分なじまない
為にエツチング残りに伴なう製品の歩留低下及び次工程
の汚染を引き起こしていた。In the structure of the conventional etching tank described above, the groove side wall 5 of the magazine case on the surface of the semiconductor wafer is
A or 5b, or air bubbles 6 generated during etching may enter between the semiconductor wafer and the groove side wall of the magazine case, preventing the chemical solution from fully adhering to the semiconductor wafer, resulting in poor product yield due to etching residue. This was causing deterioration and contamination of the next process.
本発明は、薬液を入れたエツチング槽に半導体ウェーハ
を浸漬し前記半導体ウェーハ表面をエツチング加工する
ウェットエツチング装置において、前記エツチング槽の
底部に前記半導体ウェーハに接触して回転させる回転体
を有するというものである。The present invention provides a wet etching apparatus for etching the surface of the semiconductor wafer by immersing the semiconductor wafer in an etching tank containing a chemical solution, which includes a rotating body at the bottom of the etching tank that contacts and rotates the semiconductor wafer. It is.
以下に本発明の一実施例を図により説明する。 An embodiment of the present invention will be described below with reference to the drawings.
第1図は本発明の一実施例の説明する為の断面模式図で
ある。FIG. 1 is a schematic cross-sectional view for explaining one embodiment of the present invention.
従来のウェットエツチング装置と同様に断面長方形のエ
ツチング槽1と、一定の位置に水平に固定された底板2
より構成されている。底板2の上方に回転軸7がエツチ
ング槽lの壁を貫通して配置され、図示しないパルスモ
ータに連結されている。回転軸7には複数の円板8が設
けられている。半導体ウェーハ4を収納したマガジンケ
ース3を薬液中に浸漬して底板2に置く。半導体ウェー
ハ4はオリエンテーションフラットがマガジンケース3
の底部にくるように収納されているとする。各半導体ウ
ェーハのオリエンテーションフラットに円板が接触して
若干押し上げるよう、回転軸の位置が定められていると
する。パルスモータにより回転軸を回転させ、半導体ウ
ェーハを揺動させることにより、従来例のように半導体
ウェーハとマガジンケースの溝壁面に気泡が入り込んで
静止することを防止することができる。Similar to conventional wet etching equipment, there is an etching tank 1 with a rectangular cross section, and a bottom plate 2 fixed horizontally at a fixed position.
It is composed of A rotating shaft 7 is disposed above the bottom plate 2, penetrating the wall of the etching tank 1, and is connected to a pulse motor (not shown). A plurality of discs 8 are provided on the rotating shaft 7. A magazine case 3 containing semiconductor wafers 4 is immersed in a chemical solution and placed on the bottom plate 2. The orientation flat of the semiconductor wafer 4 is the magazine case 3.
Assume that it is stored so that it is at the bottom of the . Assume that the position of the rotation axis is determined so that the disk contacts the orientation flat of each semiconductor wafer and pushes it up slightly. By rotating the rotary shaft with a pulse motor and swinging the semiconductor wafer, it is possible to prevent air bubbles from entering the groove wall surface of the semiconductor wafer and the magazine case and remaining stationary as in the conventional example.
円板8を回転軸7と同心に取り付ける必要はない。又、
長円状にしてもよい。It is not necessary to mount the disc 8 concentrically with the rotating shaft 7. or,
It may be oval.
以上説明した様に本発明はエツチング槽の底部に半導体
ウェーハに接触してこれに回転運動を与える回転体を取
りつけたことで半導体ウェーハの表面とマガジンケース
の溝側壁に接したままになったりエツチング中に発生す
る気泡が両者の間に入り込んで静止したりしない為エツ
チングを阻害することがなくエツチング残りを無くし、
歩留りが改善されるという効果を有する。As explained above, the present invention has a rotating body attached to the bottom of the etching tank that contacts the semiconductor wafer and gives it a rotational motion, so that the surface of the semiconductor wafer remains in contact with the side wall of the groove of the magazine case, and the etching process is prevented. Since the air bubbles generated inside do not get stuck between the two and become stationary, they do not interfere with etching and eliminate etching residue.
This has the effect of improving yield.
第1図は本発明のエツチング装置を示す断面模式図、第
2図(a)は従来のエツチング装置を示す断面模式図、
第2図(b)は第2図(a)のA部を拡大して示す模式
図である。
1・・・エツチング槽、2・・・エツチング槽内の底板
、3・・・マガジンケース、4・・・半導体ウェーハ、
5a、5b・・・マガジンケースの溝側壁、6・・気泡
、7・・・回転軸、8・・・円板。FIG. 1 is a schematic cross-sectional view showing an etching apparatus of the present invention, FIG. 2(a) is a schematic cross-sectional view showing a conventional etching apparatus,
FIG. 2(b) is a schematic diagram showing an enlarged view of section A in FIG. 2(a). DESCRIPTION OF SYMBOLS 1... Etching tank, 2... Bottom plate in the etching tank, 3... Magazine case, 4... Semiconductor wafer,
5a, 5b... Groove side wall of magazine case, 6... Air bubble, 7... Rotating shaft, 8... Disc.
Claims (1)
前記半導体ウェーハ表面をエッチング加工するウェット
エッチング装置において、前記エッチング槽の底部に前
記半導体ウェーハに接触して回転させる回転体を有する
ことを特徴とするウェットエッチング装置。A wet etching apparatus for etching the surface of the semiconductor wafer by immersing the semiconductor wafer in an etching tank containing a chemical solution, characterized in that the etching tank has a rotating body that contacts and rotates the semiconductor wafer at the bottom of the etching tank. Etching equipment.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP28250690A JPH04155925A (en) | 1990-10-19 | 1990-10-19 | Wet etching device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP28250690A JPH04155925A (en) | 1990-10-19 | 1990-10-19 | Wet etching device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH04155925A true JPH04155925A (en) | 1992-05-28 |
Family
ID=17653330
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP28250690A Pending JPH04155925A (en) | 1990-10-19 | 1990-10-19 | Wet etching device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH04155925A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100359228B1 (en) * | 2000-03-15 | 2002-11-04 | 네오세미테크 주식회사 | Etching Apparatus for Flattening Both Surfaces of Semiconductor Wafer and Surface Flattening Method Using the Same |
-
1990
- 1990-10-19 JP JP28250690A patent/JPH04155925A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100359228B1 (en) * | 2000-03-15 | 2002-11-04 | 네오세미테크 주식회사 | Etching Apparatus for Flattening Both Surfaces of Semiconductor Wafer and Surface Flattening Method Using the Same |
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