JPH0453684A - Support device for wafer - Google Patents
Support device for waferInfo
- Publication number
- JPH0453684A JPH0453684A JP2158457A JP15845790A JPH0453684A JP H0453684 A JPH0453684 A JP H0453684A JP 2158457 A JP2158457 A JP 2158457A JP 15845790 A JP15845790 A JP 15845790A JP H0453684 A JPH0453684 A JP H0453684A
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- turntable
- support pins
- wafer support
- placing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 235000012431 wafers Nutrition 0.000 abstract 12
- 230000009191 jumping Effects 0.000 abstract 1
- 238000004140 cleaning Methods 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 5
- 239000003566 sealing material Substances 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 238000011109 contamination Methods 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 2
- 241000257465 Echinoidea Species 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 238000011282 treatment Methods 0.000 description 1
Abstract
Description
【発明の詳細な説明】
り東上！■里玉■
本発明はウェハ支持装置、より詳細には高速回転するタ
ーンテーブルを備えたウェハ支持装置に関する。[Detailed description of the invention] Ritojo! ■Satama■ The present invention relates to a wafer support device, and more particularly to a wafer support device equipped with a turntable that rotates at high speed.
従迷ｎ克術
一般に、半導体装置を製造する際、半導体ウェハの製造
プロセスにおいて、薬品処理が繰り返し行なわれ、その
度に薬品等の塗布、洗浄及び乾燥が行なわれている。In general, when manufacturing semiconductor devices, chemical treatments are repeatedly performed in the semiconductor wafer manufacturing process, and each time, the application of chemicals, cleaning, and drying are performed.
これら工程は例えば、回転ステージ上にウェハを支持し
、あるいは高速回転するロータ内にウェハを収納して、
遠心力と気流によってウニへ表面を乾燥させる装置を用
いて行なわれている（特開昭６０−３０１４０号公報及
び実開平１−６３１３３号公報）。These processes include, for example, supporting the wafer on a rotating stage or storing the wafer in a rotor that rotates at high speed.
This is carried out using a device that dries the surface of sea urchins using centrifugal force and airflow (Japanese Patent Application Laid-Open No. 60-30140 and Japanese Utility Model Application No. 1-63133).
また、例えば、実開昭５８−５３４５号公報には、ウェ
ハを真空吸着するウェハチャックが提案されている。こ
れによると、第４図に示したように、凹部４１が形成さ
れ、上面に開放した有底円筒形状の保持体４０の上面に
、ウェハ４２より大きな外径の環状の角溝４３が刻設さ
れ、この角溝４３に保持体４０の上面から平均的に突出
するように弾力性に冨む環状シール材４４が充填されて
いる。また、環状シール材４４の上面のウェハ４２と密
着する面には、たとえば、フッ素樹脂被覆体４５が被着
されおり、フッ素樹脂被覆体４５で被覆されている以外
の保持体４０の上面には、弾力性に冨むフィルム４７が
貼着されており、フィルム４７の上面はウェハ４２と直
接接触する吸着面となっている。一方、この保持体４０
の中心部には図示しない真空ポンプに接続される吸引口
４６が穿設されており、ラッピングやポリッシング等の
研磨加工を行なう際には、まず、ウェハ４２をフィルム
４７の吸着面上に載置し、真空ポンプを駆動する。この
ことにより、環状シール材４４は適当な弾性を有してい
るので被覆体４５の上面がフィルム４７の上面との高さ
の差の分だけ環状シール材４４中に食い込むことになり
、ウェハ４２はフィルム４７面上に吸着保持される。Furthermore, for example, Japanese Utility Model Application Publication No. 58-5345 proposes a wafer chuck that vacuum-chucks a wafer. According to this, as shown in FIG. 4, a recess 41 is formed and an annular square groove 43 having an outer diameter larger than the wafer 42 is carved on the upper surface of a bottomed cylindrical holder 40 that is open at the upper surface. This square groove 43 is filled with a highly elastic annular sealing material 44 so as to protrude evenly from the upper surface of the holder 40. Further, the upper surface of the annular sealing material 44 that comes into close contact with the wafer 42 is coated with, for example, a fluororesin coating 45, and the upper surface of the holder 40 other than that covered with the fluororesin coating 45 is covered with a fluorine resin coating 45. A highly elastic film 47 is attached, and the upper surface of the film 47 serves as a suction surface that directly contacts the wafer 42 . On the other hand, this holding body 40
A suction port 46 connected to a vacuum pump (not shown) is provided in the center of the wafer 42. When performing polishing processes such as lapping and polishing, the wafer 42 is first placed on the suction surface of the film 47. and drive the vacuum pump. As a result, since the annular sealing material 44 has appropriate elasticity, the top surface of the covering 45 digs into the annular sealing material 44 by the difference in height from the top surface of the film 47. is attracted and held on the surface of the film 47.
さらに、特開昭５９−１５４０２８号公報において提案
されているウェハ洗浄装置は、第５図に示したように構
成されている。すなわち、排気口５０が穿設されたウェ
ハ固定用のチャック５１と、排気口５ｏと連通ずる排気
路５２が形成された回転軸５３と、ブツシュ５５が圧入
されたスピンナーケース５６と、駆動モータ（図示せず
）と真空ポンプ（図示せず）と洗浄液供給装置（図示せ
ず）とで構成されている。そしてチャック５１にウェハ
５４を載置した後、真空ポンプを駆動させて真空吸引し
て支持し、ウェハ５４を回転させ、洗浄液供給装置から
洗浄液を供給することによりウェハ５４を洗浄し、洗浄
液の供給を停止した後、弓き続きウェハ５４を高速回転
させることでウェハ５４を乾燥させるようになっている
。Furthermore, the wafer cleaning apparatus proposed in Japanese Patent Application Laid-Open No. 59-154028 is constructed as shown in FIG. That is, a chuck 51 for fixing a wafer having an exhaust port 50 formed therein, a rotating shaft 53 having an exhaust path 52 communicating with the exhaust port 5o, a spinner case 56 into which a bushing 55 is press-fitted, and a drive motor ( (not shown), a vacuum pump (not shown), and a cleaning liquid supply device (not shown). After placing the wafer 54 on the chuck 51, the wafer 54 is cleaned by driving the vacuum pump to perform vacuum suction, rotating the wafer 54, and supplying cleaning liquid from the cleaning liquid supply device. After stopping, the wafer 54 is dried by continuing to rotate the wafer 54 at high speed.
明が解２しよ−とする課題
上記した従来のウェハ支持体では、ウェハ裏面の洗浄が
不可能であり、しかもウェハ裏面の汚染防止が完全では
ない。また、とくにバキューム式のウェハ支持体におい
ては、装置そのものの構造が複雑となり、装置自身の製
作コストが高くなる。しかも、その工程で用いられる洗
、ｌｌ）液や薬品、例えばＨＮＯ，によって、真空ポン
プが腐食され、ウェハ支持の信頼性が低下するという課
題があった。Problems that Ming is trying to solve: With the conventional wafer support described above, it is impossible to clean the back surface of the wafer, and furthermore, contamination of the back surface of the wafer cannot be completely prevented. Further, especially in the case of a vacuum type wafer support, the structure of the device itself becomes complicated, and the manufacturing cost of the device itself becomes high. Moreover, there is a problem in that the vacuum pump is corroded by the cleaning solution and chemicals, such as HNO, used in that process, reducing the reliability of wafer support.
本発明はこれら課題に鑑み発明されたものであって、ウ
ェハ表裏面の洗浄等の操作が可能で、装置自身の作製コ
ストが低く、しかもウェハ支持の信頼性が高いウェハ支
持装置を提供することを目的としている。The present invention was devised in view of these problems, and provides a wafer support device that can perform operations such as cleaning the front and back surfaces of a wafer, has a low manufacturing cost, and has high reliability in supporting the wafer. It is an object.
課 を早決するための Ｐ
上記した目的を達成するために本発明に係るウェハ支持
装置は、ターンテーブルに、ターンテーブルの中心から
等距離の位置に３本以上のウェハ支持ピンを備え、前記
ウェハ支持ピンの頂部の少なくとも中心側にウェハ載置
用の肩部を有することを特徴としている。In order to achieve the above-mentioned object, a wafer support device according to the present invention is provided with a turntable having three or more wafer support pins equidistant from the center of the turntable. The support pin is characterized by having a shoulder portion for placing a wafer on at least the center side of the top portion.
止
上記した構成によれば、ターンテーブルに、ターンテー
ブルの中心から等距離の位置に３本以上のウェハ支持ピ
ンを備え、前記ウェハ支持ピンの頂部の少なくとも中心
側にウェハ載置用の肩部を有するので、ウェハを肩部に
載置した後、前記ターンテーブルを回転させることによ
り、前記ウェハ支持ピンも回転し、このウェハ支持ピン
の回転による遠心力により、前記ターンテーブルと前記
ウェハとの間が負圧となり、ウェハは前記肩部にしっか
りと支持されることとなる。According to the above configuration, the turntable is provided with three or more wafer support pins at positions equidistant from the center of the turntable, and a shoulder portion for placing a wafer is provided at least on the center side of the top of the wafer support pin. Therefore, by rotating the turntable after placing the wafer on the shoulder, the wafer support pin also rotates, and the centrifugal force caused by the rotation of the wafer support pin causes the rotation between the turntable and the wafer. There is a negative pressure between them, and the wafer is firmly supported by the shoulders.
１玉す
以下、本発明に係るウェハ支持装置の実施例を図面に基
づいて説明する。DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, embodiments of a wafer support device according to the present invention will be described based on the drawings.
第１図において、１０はチャンバー１０ａを構成する容
器であり、この容器ｌＯの底面には回転軸１１が貫設さ
れており、チャンバー１０ａ内にターンテーブル１２が
配設されている６ターンテーブル１２上には、ターンテ
ーブル１２の中心から等距離の位置に３本以上の、本実
施例では６本のウェハ支持ピン１３が垂直に立設されて
おり、ウェハ支持ピン１３の頂部にはウェハ１４を安定
的に支持するための肩部１３ａが形成されている。さら
に容器ｌＯの上部には、薬品等を注入するための供給ノ
ズル１５がウェハ支持ピン１３に支持されるウェハ１４
上方に保持されている。In FIG. 1, reference numeral 10 denotes a container constituting a chamber 10a, a rotary shaft 11 is inserted through the bottom of the container 10, and a turntable 12 is disposed inside the chamber 10a. Three or more (six in this embodiment) wafer support pins 13 are vertically installed on the top at positions equidistant from the center of the turntable 12, and the wafer 14 is mounted on the top of the wafer support pins 13. A shoulder portion 13a is formed to stably support the. Further, in the upper part of the container IO, a supply nozzle 15 for injecting chemicals etc. is installed on the wafer 14 supported by the wafer support pins 13.
held upwards.
ウェハ１４をウェハ支持ピン１３上に載置する際、ウェ
ハ支持ピン１３の頂部に形成された肩部１３ａにウェハ
１４を嵌合し、ターンテーブル１２を回転させる。それ
によって、支持ピン１３が遠心ポンプにおけるターピン
翼の如き作用をなし、ターンテーブル１２とウェハ１４
との間の空気が第１図（ｂ）中矢印■の方向に流れ、ウ
ェハ１４下部が負圧となり、ウェハ１４は下方に押し付
けられ、ウェハ支持ピン１３の肩部１３ａにしっかりと
保持される。従って、ターンテーブル１２を高速で回転
させてもウェハ１４の飛び上がり等を防止でき、真空ポ
ンプという複雑な装置を必要とせず、回転による遠心力
を利用することによってウェハ１４が安定的に支持され
る。また、ウェハ１４の裏面は表面と同様にターンテー
ブル１２等に接触することがなく、ウェハ載置台等との
接触によって生じる汚染を防止することができる。When placing the wafer 14 on the wafer support pin 13, the wafer 14 is fitted onto the shoulder 13a formed at the top of the wafer support pin 13, and the turntable 12 is rotated. As a result, the support pin 13 acts like a turpin blade in a centrifugal pump, and the support pin 13 acts like a turpin blade in a centrifugal pump, allowing the turntable 12 and the wafer 14 to
The air between the wafer 14 and the wafer 14 flows in the direction of the arrow (■) in FIG. . Therefore, even if the turntable 12 is rotated at high speed, the wafer 14 can be prevented from flying up, and the wafer 14 can be stably supported by utilizing the centrifugal force generated by the rotation, without requiring a complicated device such as a vacuum pump. . Further, the back surface of the wafer 14 does not come into contact with the turntable 12 or the like like the front surface, and contamination caused by contact with the wafer mounting table or the like can be prevented.
また、別の実施例として、第２図に示した支持ピン１６
は、肩部１６ａに凹凸１６ｂが形成されている。凹凸１
６ｂが形成されていない場合、支持ピン１３の肩部１３
ａとウェハ１４との接触部において毛細管現象による水
滴が入り込み、水切れ等が悪（なることがある。このよ
うに、支持ピン１６の肩部１６ａに凹凸１６ｂを形成す
ることにより、水滴等が支持ピン１６の肩部１６ａとウ
ェハ１４との接触部で留まることを防止することができ
る。Further, as another embodiment, the support pin 16 shown in FIG.
In this case, unevenness 16b is formed on the shoulder portion 16a. Unevenness 1
6b is not formed, the shoulder portion 13 of the support pin 13
Water droplets due to capillary action may enter the contact area between a and the wafer 14, resulting in poor water drainage.In this way, by forming the unevenness 16b on the shoulder portion 16a of the support pin 16, water droplets, etc. are supported. It is possible to prevent the pins 16 from being stuck at the contact portion between the shoulder portion 16a of the pin 16 and the wafer 14.
さらに別の実施例として、支持ピン１６の肩部１６ａの
凹凸１６ｂの形状を、支持ピン１６をターンテーブル１
２に添設した際、内側となる肩部１６ａの端部から外側
となる端部に向がって（平面視）放射状に形成し、遠心
力による水等の移動がより容易となるように構成するこ
とも望ましい。As yet another example, the shape of the unevenness 16b of the shoulder portion 16a of the support pin 16 may be changed so that the support pin 16 is
2, it is formed radially from the inner end of the shoulder 16a toward the outer end (in plan view), so that water, etc. can move more easily due to centrifugal force. It is also desirable to configure
なお、支持ピンは最低３本必要であるが、本数が多過ぎ
るとウェハ１４脱着時にウェハ搬送装置との接触が起こ
り易くなるので、５〜６本が適当であり、形状としては
、円柱状に限定されず、第３図に示したようなプレート
状等の支持ピン１７でも差し支えない。ただし、支持ピ
ンの本数が少ない場合には排気効果の大きい支持ピン１
７のような形状が好ましい。支持ピン１３．１６のサイ
ズは、直径がｌ Ｏｍｍ程度、長さは、短過ぎるとター
ンテーブル１２からのはね返りがウェハ１４裏面に付着
しやすくなり、逆に長過ぎると遠心力により支持ピン１
３．１６の上部が外側に反りゃすくなるので１００ ｍ
ｍ程度が好ましい。また、支持ピン１３．１６．１７、
ターンテーブル１２等の材質は洗浄液やその他使用され
る薬品に腐食されにくい材質、例えば硝酸に対してはＴ
ｉが有効であり、アルミニウム及びステンレス鋼等も使
用可能である。さらに、ターンテーブル１２の回転数は
水切れ等の点から３０００〜４０００ｒ、 ｐ、 ｍ、
程度がよい。Note that at least three support pins are required, but if there are too many support pins, contact with the wafer transport device will easily occur when the wafer 14 is attached and detached, so five to six support pins are appropriate, and the shape is cylindrical. The support pin 17 is not limited to the shape of a plate, as shown in FIG. 3, or the like. However, if the number of support pins is small, support pin 1, which has a large exhaust effect,
A shape like 7 is preferable. The size of the support pins 13 and 16 is approximately 10 mm in diameter, and if the length is too short, the rebound from the turntable 12 will easily adhere to the back surface of the wafer 14, whereas if it is too long, the support pins 1 will be damaged by centrifugal force.
3.100 m as the upper part of 16 will be less likely to warp outward.
About m is preferable. Also, support pins 13.16.17,
The material of the turntable 12 etc. is a material that is resistant to corrosion by cleaning fluids and other chemicals used, such as T, which is resistant to nitric acid.
i is effective, and aluminum, stainless steel, etc. can also be used. Furthermore, the rotation speed of the turntable 12 is 3000 to 4000 r, p, m, from the viewpoint of draining water, etc.
Good condition.
及豆□□□苅呈
以上の説明により明らかなように本発明に係るウェハ支
持装置においては、ターンテーブルに、ターンテーブル
の中心から等距離の位置に３本以上のウェハ支持ピンを
備え、前記ウェハ支持ピンの頂部の少なくとも中心側に
ウェハ載置用の肩部を有するので、前記ウェハ支持ピン
の頂部の肩部にウェハを嵌合し、前記ターンテーブルを
回転させることにより、前記支持ピンが遠心ポンプにお
けるターピン翼の如き作用をなしてウェハ下部が負圧と
なり、ウェハは下方に押し付けられる。As is clear from the above description, in the wafer support device according to the present invention, the turntable is provided with three or more wafer support pins at positions equidistant from the center of the turntable, and the Since the top of the wafer support pin has a shoulder for placing a wafer at least on the center side, by fitting a wafer into the shoulder of the top of the wafer support pin and rotating the turntable, the support pin can be placed. The wafer acts like a turpin blade in a centrifugal pump, creating a negative pressure below the wafer and pushing the wafer downward.
従って、前記ターンテーブルを高速で回転させてもウェ
ハの飛び上がり等を防止でき、回転力の利用によってウ
ェハを安定的に支持することができる。また、ウェハ裏
面は表面と同様に前記ターンテーブルと接触することは
なく、ウェハが載置台等と接触することによって生しる
汚染を防止することができる。さらに、真空ポンプとい
う複雑な装置を必要としないので、装置自身の作製費用
を低く抑えることができ、半導体ウェハ処理工程でのコ
ストダウンを図ることができる。Therefore, even if the turntable is rotated at high speed, the wafer can be prevented from flying up, and the wafer can be stably supported by using the rotational force. Further, the back side of the wafer does not come into contact with the turntable like the front side, and contamination caused by the wafer coming into contact with a mounting table or the like can be prevented. Furthermore, since a complicated device such as a vacuum pump is not required, the manufacturing cost of the device itself can be kept low, and costs in the semiconductor wafer processing process can be reduced.
第１図（ａ）は本発明に係るウェハ支持装置の一実施例
を示す平面図、第１図（ｂ）は第１′図（ａ）における
正面断面図、第２図（ａ）（ｂ）は第１図における支持
ピンの別の実施例を示す平面図及び正面図、第３図は別
の実施例を示す平面図、第４図は従来のウェハ支持装置
の一例を示す側面断面図、第５図は従来のウェハ支持装
置の別の例を示す側面断面図である。
１２・・・ターンテーブル
１３．１６．１７・・・支持ピン
１３ａ、１６ａ、１７ａ・・・肩部
１４・・・ウエハ
第１図
第２図
第３図FIG. 1(a) is a plan view showing one embodiment of the wafer support device according to the present invention, FIG. 1(b) is a front sectional view of FIG. 1'(a), and FIG. ) are a plan view and a front view showing another embodiment of the support pin in FIG. 1, FIG. 3 is a plan view showing another embodiment, and FIG. 4 is a side sectional view showing an example of a conventional wafer support device. , FIG. 5 is a side sectional view showing another example of a conventional wafer support device. 12...Turntable 13.16.17...Support pins 13a, 16a, 17a...Shoulder portion 14...Wafer Fig. 1 Fig. 2 Fig. 3
Claims (1)
距離の位置に３本以上のウェハ支持ピンを備え、前記ウ
ェハ支持ピンの頂部の少なくとも中心側にウェハ載置用
の肩部を有することを特徴とするウェハ支持装置。(1) The turntable is equipped with three or more wafer support pins equidistant from the center of the turntable, and has a shoulder for placing a wafer at least on the center side of the top of the wafer support pin. A wafer support device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2158457A JPH0453684A (en) | 1990-06-15 | 1990-06-15 | Support device for wafer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2158457A JPH0453684A (en) | 1990-06-15 | 1990-06-15 | Support device for wafer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0453684A true JPH0453684A (en) | 1992-02-21 |
Family
ID=15672167
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2158457A Pending JPH0453684A (en) | 1990-06-15 | 1990-06-15 | Support device for wafer |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0453684A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5966765A (en) * | 1996-10-21 | 1999-10-19 | Ebara Corporation | Cleaning apparatus |
| JP2001007068A (en) * | 1999-04-08 | 2001-01-12 | Applied Materials Inc | Spin rinse dryer |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5538654A (en) * | 1978-09-11 | 1980-03-18 | Hitoshi Mifuji | Record-disc adsorptive turntable |
| JPS6260027B2 (en) * | 1981-10-31 | 1987-12-14 | Shimadzu Corp | |
| JPS6462861A (en) * | 1987-09-02 | 1989-03-09 | Masumitsu Setsubi Kogyo Kk | Processed substance supporting tool in spin cleaning dryer |
-
1990
- 1990-06-15 JP JP2158457A patent/JPH0453684A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5538654A (en) * | 1978-09-11 | 1980-03-18 | Hitoshi Mifuji | Record-disc adsorptive turntable |
| JPS6260027B2 (en) * | 1981-10-31 | 1987-12-14 | Shimadzu Corp | |
| JPS6462861A (en) * | 1987-09-02 | 1989-03-09 | Masumitsu Setsubi Kogyo Kk | Processed substance supporting tool in spin cleaning dryer |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5966765A (en) * | 1996-10-21 | 1999-10-19 | Ebara Corporation | Cleaning apparatus |
| JP2001007068A (en) * | 1999-04-08 | 2001-01-12 | Applied Materials Inc | Spin rinse dryer |
| JP4702975B2 (en) * | 1999-04-08 | 2011-06-15 | アプライド マテリアルズ インコーポレイテッド | Spin rinse dryer |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US5829156A (en) | Spin dryer apparatus | |
| TWI458035B (en) | Substrate processing apparatus and substrate processing method | |
| TW544772B (en) | Apparatus and method for substrate preparation implementing a surface tension reducing process | |
| US8268087B2 (en) | Liquid processing apparatus, liquid processing method, and storage medium | |
| KR100379650B1 (en) | Substrate cleaning apparatus and substrate cleaning method | |
| JP2013004705A (en) | Substrate processing method and substrate processing unit | |
| JPS6064436A (en) | Spin drier | |
| JPH0573245B2 (en) | ||
| JPH07106233A (en) | Rotary type substrate treater | |
| JP2008060299A (en) | Substrate treating device and method | |
| JPH11297652A (en) | Substrate treatment apparatus | |
| JP2010114123A (en) | Substrate processing apparatus and method | |
| KR102622807B1 (en) | Cleaning member, substrate cleaning apparatus, and substrate processing apparatus | |
| JPH0453684A (en) | Support device for wafer | |
| JPH0864568A (en) | Wafer cleaning device | |
| KR20090029407A (en) | Support member and apparatus for treating substrate with the same | |
| JPH05253853A (en) | Flake absorber and washing method for flake absorber | |
| JP4963411B2 (en) | Manufacturing method of semiconductor device or semiconductor wafer | |
| GB2349742A (en) | Method and apparatus for processing a wafer to remove an unnecessary substance therefrom | |
| JP5302781B2 (en) | Substrate liquid processing apparatus, substrate liquid processing method, and storage medium storing substrate liquid processing program | |
| JP2003017452A (en) | Method and apparatus for treating substrate | |
| KR100745482B1 (en) | Apparatus for treating backside of substrate | |
| US20040025901A1 (en) | Stationary wafer spin/spray processor | |
| JPH09306974A (en) | Work holder | |
| JP2017069336A (en) | Substrate processing apparatus, cleaning method of suction holding unit, and storage medium |