JPH0414547B2 - - Google Patents

Info

Publication number
JPH0414547B2
JPH0414547B2 JP57218592A JP21859282A JPH0414547B2 JP H0414547 B2 JPH0414547 B2 JP H0414547B2 JP 57218592 A JP57218592 A JP 57218592A JP 21859282 A JP21859282 A JP 21859282A JP H0414547 B2 JPH0414547 B2 JP H0414547B2
Authority
JP
Japan
Prior art keywords
region
gate
imaging device
semiconductor imaging
pixel cell
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP57218592A
Other languages
English (en)
Japanese (ja)
Other versions
JPS59107688A (ja
Inventor
Junichi Nishizawa
Naoshige Tamamushi
Sohee Suzuki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujifilm Holdings Corp
Original Assignee
Fuji Photo Film Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Photo Film Co Ltd filed Critical Fuji Photo Film Co Ltd
Priority to JP57218592A priority Critical patent/JPS59107688A/ja
Publication of JPS59107688A publication Critical patent/JPS59107688A/ja
Priority to US06/882,456 priority patent/US4725873A/en
Publication of JPH0414547B2 publication Critical patent/JPH0414547B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/196—Junction field effect transistor [JFET] image sensors; Static induction transistor [SIT] image sensors

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
JP57218592A 1982-12-13 1982-12-13 半導体撮像装置 Granted JPS59107688A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP57218592A JPS59107688A (ja) 1982-12-13 1982-12-13 半導体撮像装置
US06/882,456 US4725873A (en) 1982-12-13 1986-07-08 Semiconductor imaging device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57218592A JPS59107688A (ja) 1982-12-13 1982-12-13 半導体撮像装置

Publications (2)

Publication Number Publication Date
JPS59107688A JPS59107688A (ja) 1984-06-21
JPH0414547B2 true JPH0414547B2 (en:Method) 1992-03-13

Family

ID=16722369

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57218592A Granted JPS59107688A (ja) 1982-12-13 1982-12-13 半導体撮像装置

Country Status (2)

Country Link
US (1) US4725873A (en:Method)
JP (1) JPS59107688A (en:Method)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59188277A (ja) * 1983-04-08 1984-10-25 Hamamatsu Photonics Kk 半導体撮像装置
JPH0719881B2 (ja) * 1985-05-01 1995-03-06 キヤノン株式会社 光電変換装置
JP2578600B2 (ja) * 1987-04-28 1997-02-05 オリンパス光学工業株式会社 半導体装置
US5694564A (en) * 1993-01-04 1997-12-02 Motorola, Inc. Data processing system a method for performing register renaming having back-up capability
GB2289983B (en) * 1994-06-01 1996-10-16 Simage Oy Imaging devices,systems and methods
US6035013A (en) * 1994-06-01 2000-03-07 Simage O.Y. Radiographic imaging devices, systems and methods
US7501631B2 (en) * 2005-10-07 2009-03-10 Schick Technologies, Inc. Shielding an imaging array from X-ray noise

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5038531A (en:Method) * 1973-08-07 1975-04-10
JPS5910631B2 (ja) * 1976-05-13 1984-03-10 松下電器産業株式会社 固体撮像装置
US4122483A (en) * 1977-09-30 1978-10-24 Rca Corporation Semiconductor device having reduced leakage current
US4427990A (en) * 1978-07-14 1984-01-24 Zaidan Hojin Handotai Kenkyu Shinkokai Semiconductor photo-electric converter with insulated gate over p-n charge storage region
JPS5530855A (en) * 1978-08-25 1980-03-04 Semiconductor Res Found Semiconductor optical device
JPS5537250U (en:Method) * 1978-08-31 1980-03-10
JPS6033349B2 (ja) * 1979-08-18 1985-08-02 財団法人半導体研究振興会 半導体撮像装置
JPS5943581A (ja) * 1982-09-03 1984-03-10 Junichi Nishizawa 半導体光電変換装置
JPH105672A (ja) * 1996-06-26 1998-01-13 Asahi Optical Co Ltd プラスチックレンズのグラジエント染色法

Also Published As

Publication number Publication date
JPS59107688A (ja) 1984-06-21
US4725873A (en) 1988-02-16

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