JPH0411513B2 - - Google Patents
Info
- Publication number
- JPH0411513B2 JPH0411513B2 JP57179055A JP17905582A JPH0411513B2 JP H0411513 B2 JPH0411513 B2 JP H0411513B2 JP 57179055 A JP57179055 A JP 57179055A JP 17905582 A JP17905582 A JP 17905582A JP H0411513 B2 JPH0411513 B2 JP H0411513B2
- Authority
- JP
- Japan
- Prior art keywords
- litao
- crystal
- crucible
- single crystal
- crystals
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/16—Oxides
- C30B29/22—Complex oxides
- C30B29/30—Niobates; Vanadates; Tantalates
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP57179055A JPS5969490A (ja) | 1982-10-14 | 1982-10-14 | タンタル酸リチウム単結晶の製造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP57179055A JPS5969490A (ja) | 1982-10-14 | 1982-10-14 | タンタル酸リチウム単結晶の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5969490A JPS5969490A (ja) | 1984-04-19 |
JPH0411513B2 true JPH0411513B2 (en, 2012) | 1992-02-28 |
Family
ID=16059321
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP57179055A Granted JPS5969490A (ja) | 1982-10-14 | 1982-10-14 | タンタル酸リチウム単結晶の製造方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5969490A (en, 2012) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2015093798A (ja) * | 2013-11-12 | 2015-05-18 | 住友金属鉱山株式会社 | イリジウム製坩堝を用いた複合酸化物単結晶の製造方法 |
JP6403057B2 (ja) * | 2014-10-21 | 2018-10-10 | 国立大学法人信州大学 | β−Ga2O3結晶の製造方法および製造装置 |
JP6726910B2 (ja) | 2016-04-21 | 2020-07-22 | 国立大学法人信州大学 | 酸化ガリウム結晶の製造装置および酸化ガリウム結晶の製造方法 |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5542238A (en) * | 1978-09-14 | 1980-03-25 | Sanyo Electric Co Ltd | Production of lithium tantalate single crystal |
-
1982
- 1982-10-14 JP JP57179055A patent/JPS5969490A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS5969490A (ja) | 1984-04-19 |
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