JPS5969490A - タンタル酸リチウム単結晶の製造方法 - Google Patents
タンタル酸リチウム単結晶の製造方法Info
- Publication number
- JPS5969490A JPS5969490A JP57179055A JP17905582A JPS5969490A JP S5969490 A JPS5969490 A JP S5969490A JP 57179055 A JP57179055 A JP 57179055A JP 17905582 A JP17905582 A JP 17905582A JP S5969490 A JPS5969490 A JP S5969490A
- Authority
- JP
- Japan
- Prior art keywords
- single crystal
- crystal
- crucible
- melt
- oxygen
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000013078 crystal Substances 0.000 title claims abstract description 33
- WSMQKESQZFQMFW-UHFFFAOYSA-N 5-methyl-pyrazole-3-carboxylic acid Chemical compound CC1=CC(C(O)=O)=NN1 WSMQKESQZFQMFW-UHFFFAOYSA-N 0.000 title claims description 4
- 238000004519 manufacturing process Methods 0.000 title claims description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 9
- 238000000034 method Methods 0.000 claims abstract description 9
- 239000001301 oxygen Substances 0.000 claims abstract description 9
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 9
- 239000011261 inert gas Substances 0.000 claims abstract description 6
- 239000000155 melt Substances 0.000 claims abstract description 6
- 229910012463 LiTaO3 Inorganic materials 0.000 claims abstract description 5
- 238000002844 melting Methods 0.000 abstract description 9
- 230000008018 melting Effects 0.000 abstract description 9
- 238000010438 heat treatment Methods 0.000 abstract description 7
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 abstract description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 abstract description 4
- 229910052786 argon Inorganic materials 0.000 abstract description 2
- 239000007788 liquid Substances 0.000 abstract description 2
- 229910052757 nitrogen Inorganic materials 0.000 abstract description 2
- 239000000126 substance Substances 0.000 abstract 1
- 229910052741 iridium Inorganic materials 0.000 description 7
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 7
- 230000007547 defect Effects 0.000 description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
- 229910000629 Rh alloy Inorganic materials 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- PXXKQOPKNFECSZ-UHFFFAOYSA-N platinum rhodium Chemical compound [Rh].[Pt] PXXKQOPKNFECSZ-UHFFFAOYSA-N 0.000 description 3
- 229910052703 rhodium Inorganic materials 0.000 description 3
- 239000010948 rhodium Substances 0.000 description 3
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 3
- 239000000463 material Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 235000012431 wafers Nutrition 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 238000004040 coloring Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000002109 crystal growth method Methods 0.000 description 1
- 238000004042 decolorization Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/16—Oxides
- C30B29/22—Complex oxides
- C30B29/30—Niobates; Vanadates; Tantalates
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57179055A JPS5969490A (ja) | 1982-10-14 | 1982-10-14 | タンタル酸リチウム単結晶の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57179055A JPS5969490A (ja) | 1982-10-14 | 1982-10-14 | タンタル酸リチウム単結晶の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5969490A true JPS5969490A (ja) | 1984-04-19 |
| JPH0411513B2 JPH0411513B2 (en, 2012) | 1992-02-28 |
Family
ID=16059321
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57179055A Granted JPS5969490A (ja) | 1982-10-14 | 1982-10-14 | タンタル酸リチウム単結晶の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5969490A (en, 2012) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2015093798A (ja) * | 2013-11-12 | 2015-05-18 | 住友金属鉱山株式会社 | イリジウム製坩堝を用いた複合酸化物単結晶の製造方法 |
| JP2016079080A (ja) * | 2014-10-21 | 2016-05-16 | 国立大学法人信州大学 | β−Ｇａ２Ｏ３結晶の製造方法及び製造装置並びにるつぼ容器 |
| US10570528B2 (en) | 2016-04-21 | 2020-02-25 | Shinshu University | Apparatus and method for producing gallium oxide crystal |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5542238A (en) * | 1978-09-14 | 1980-03-25 | Sanyo Electric Co Ltd | Production of lithium tantalate single crystal |
-
1982
- 1982-10-14 JP JP57179055A patent/JPS5969490A/ja active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5542238A (en) * | 1978-09-14 | 1980-03-25 | Sanyo Electric Co Ltd | Production of lithium tantalate single crystal |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2015093798A (ja) * | 2013-11-12 | 2015-05-18 | 住友金属鉱山株式会社 | イリジウム製坩堝を用いた複合酸化物単結晶の製造方法 |
| JP2016079080A (ja) * | 2014-10-21 | 2016-05-16 | 国立大学法人信州大学 | β−Ｇａ２Ｏ３結晶の製造方法及び製造装置並びにるつぼ容器 |
| US10570528B2 (en) | 2016-04-21 | 2020-02-25 | Shinshu University | Apparatus and method for producing gallium oxide crystal |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0411513B2 (en, 2012) | 1992-02-28 |
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