JPH0411050B2 - - Google Patents

Info

Publication number
JPH0411050B2
JPH0411050B2 JP58105919A JP10591983A JPH0411050B2 JP H0411050 B2 JPH0411050 B2 JP H0411050B2 JP 58105919 A JP58105919 A JP 58105919A JP 10591983 A JP10591983 A JP 10591983A JP H0411050 B2 JPH0411050 B2 JP H0411050B2
Authority
JP
Japan
Prior art keywords
circuit
gate
diode
gaas
dcfl
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58105919A
Other languages
English (en)
Japanese (ja)
Other versions
JPS59231920A (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP58105919A priority Critical patent/JPS59231920A/ja
Publication of JPS59231920A publication Critical patent/JPS59231920A/ja
Publication of JPH0411050B2 publication Critical patent/JPH0411050B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
    • H03K19/094—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors
    • H03K19/0956—Schottky diode FET logic
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/01—Modifications for accelerating switching
    • H03K19/017—Modifications for accelerating switching in field-effect transistor circuits
    • H03K19/01707—Modifications for accelerating switching in field-effect transistor circuits in asynchronous circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
    • H03K19/094—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors
    • H03K19/0944—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using MOSFET or insulated gate field-effect transistors, i.e. IGFET
    • H03K19/09441—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using MOSFET or insulated gate field-effect transistors, i.e. IGFET of the same canal type
    • H03K19/09443—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using MOSFET or insulated gate field-effect transistors, i.e. IGFET of the same canal type using a combination of enhancement and depletion transistors
    • H03K19/09445—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using MOSFET or insulated gate field-effect transistors, i.e. IGFET of the same canal type using a combination of enhancement and depletion transistors with active depletion transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Power Engineering (AREA)
  • Logic Circuits (AREA)
JP58105919A 1983-06-15 1983-06-15 ＧａＡｓ論理集積回路 Granted JPS59231920A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58105919A JPS59231920A (ja) 1983-06-15 1983-06-15 ＧａＡｓ論理集積回路

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58105919A JPS59231920A (ja) 1983-06-15 1983-06-15 ＧａＡｓ論理集積回路

Publications (2)

Publication Number Publication Date
JPS59231920A JPS59231920A (ja) 1984-12-26
JPH0411050B2 true JPH0411050B2 (nl) 1992-02-27

Family

ID=14420268

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58105919A Granted JPS59231920A (ja) 1983-06-15 1983-06-15 ＧａＡｓ論理集積回路

Country Status (1)

Country Link
JP (1) JPS59231920A (nl)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63156367A (ja) * 1986-12-20 1988-06-29 Fujitsu Ltd レベル・シフト・ダイオ−ド
US4844563A (en) * 1987-05-19 1989-07-04 Gazelle Microcircuits, Inc. Semiconductor integrated circuit compatible with compound standard logic signals
JP2710158B2 (ja) * 1987-12-18 1998-02-10 沖電気工業株式会社 電界効果トランジスタ論理回路
JP2002164772A (ja) * 2000-11-28 2002-06-07 New Japan Radio Co Ltd 半導体スイッチ集積回路

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5646340A (en) * 1979-09-22 1981-04-27 Nippon Telegr & Teleph Corp <Ntt> Logic circuit using schottky or p-n junction gate type field effect transistor

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5646340A (en) * 1979-09-22 1981-04-27 Nippon Telegr & Teleph Corp <Ntt> Logic circuit using schottky or p-n junction gate type field effect transistor

Also Published As

Publication number Publication date
JPS59231920A (ja) 1984-12-26

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