JPH04102324A - Vertical-type low-pressure cvd apparatus - Google Patents
Vertical-type low-pressure cvd apparatusInfo
- Publication number
- JPH04102324A JPH04102324A JP22020290A JP22020290A JPH04102324A JP H04102324 A JPH04102324 A JP H04102324A JP 22020290 A JP22020290 A JP 22020290A JP 22020290 A JP22020290 A JP 22020290A JP H04102324 A JPH04102324 A JP H04102324A
- Authority
- JP
- Japan
- Prior art keywords
- oxygen
- injector
- pressure cvd
- vertical
- cvd apparatus
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004518 low pressure chemical vapour deposition Methods 0.000 title description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 18
- 239000001301 oxygen Substances 0.000 claims abstract description 18
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 18
- 239000004065 semiconductor Substances 0.000 claims abstract description 14
- 239000007789 gas Substances 0.000 claims abstract description 10
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 claims abstract description 9
- 238000007664 blowing Methods 0.000 claims abstract description 4
- 239000011521 glass Substances 0.000 claims abstract 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 3
- 229910052796 boron Inorganic materials 0.000 claims description 3
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 claims 1
- 239000000376 reactant Substances 0.000 claims 1
- 235000012431 wafers Nutrition 0.000 abstract description 11
- 239000012495 reaction gas Substances 0.000 abstract description 2
- 238000000034 method Methods 0.000 abstract 1
- 239000005380 borophosphosilicate glass Substances 0.000 description 7
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- 229910052698 phosphorus Inorganic materials 0.000 description 3
- 239000011574 phosphorus Substances 0.000 description 3
- XDJWZONZDVNKDU-UHFFFAOYSA-N 1314-24-5 Chemical compound O=POP=O XDJWZONZDVNKDU-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- VSAISIQCTGDGPU-UHFFFAOYSA-N phosphorus trioxide Inorganic materials O1P(O2)OP3OP1OP2O3 VSAISIQCTGDGPU-UHFFFAOYSA-N 0.000 description 2
- DLYUQMMRRRQYAE-UHFFFAOYSA-N tetraphosphorus decaoxide Chemical compound O1P(O2)(=O)OP3(=O)OP1(=O)OP2(=O)O3 DLYUQMMRRRQYAE-UHFFFAOYSA-N 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は半導体装置の製造に使用する縦型減圧ＣＶＤ装
置に関し、特にリフロー性の良いボロンリンガラス膜（
ＢＰＳＧ膜）の得られる縦型減圧ＣＶＤ装置に関する。Detailed Description of the Invention [Field of Industrial Application] The present invention relates to a vertical low-pressure CVD apparatus used for manufacturing semiconductor devices, and particularly relates to a vertical low-pressure CVD apparatus used for manufacturing semiconductor devices.
This invention relates to a vertical low-pressure CVD apparatus for obtaining a BPSG film.
従来、半導体ウェハ上に形成するＢＰＳＧ膜の平坦化の
ためのりフロー性は、ボロンとリンの濃度によって決定
されると考えられていた為、ボロンとリンの濃度を高目
にすることによりリフロー性を高めていた。Conventionally, it was thought that the reflow properties for planarizing the BPSG film formed on semiconductor wafers were determined by the concentrations of boron and phosphorus. was increasing.
従来のＣＶＤ装置を第２図の断面図により説明する。縦
型炉を構成するアウターチューブ１の中にインナーチュ
ーブ２が設置され、その中央にボート３が立ててあり、
これに半導体ウェハ４が等間隔に設置されている。反応
ガスはガス導入口であるボート５からインナーチューブ
２のボトム側に導入され、トップ側から出てアウターチ
ューブ１のボトム側から排出される。A conventional CVD apparatus will be explained with reference to the cross-sectional view of FIG. An inner tube 2 is installed in an outer tube 1 constituting a vertical furnace, and a boat 3 is erected in the center of the inner tube 2.
Semiconductor wafers 4 are placed on this at regular intervals. The reaction gas is introduced into the bottom side of the inner tube 2 from a boat 5 serving as a gas introduction port, exits from the top side, and is discharged from the bottom side of the outer tube 1.
この従来のＣＶＤ装置によると、ＢＰＳＧ膜はリンおよ
びボロンの濃度が高いために、エツチングレートが高く
なったり、あるいは析出があったりと、膜質の信頼性が
低かった。又、縦型炉内のボトム側に設置した半導体ウ
ェハに比べ、センター及びトップ側に設置された半導体
ウェハのＢＰＳＧ膜は、充分なりフロー性が得られてい
ないという問題があった。According to this conventional CVD apparatus, since the BPSG film has a high concentration of phosphorus and boron, the reliability of the film quality is low, such as a high etching rate or precipitation. Furthermore, there is a problem in that the BPSG films of the semiconductor wafers placed at the center and top sides do not have sufficient flowability compared to the semiconductor wafers placed at the bottom side of the vertical furnace.
本発明の縦型減圧ＣＶＤ装置は、炉内に酸素を供給する
ためのインジェクターを備えている。The vertical reduced pressure CVD apparatus of the present invention is equipped with an injector for supplying oxygen into the furnace.
縦型炉のトップ側に設置した半導体ウェハ上のＢＰＳＧ
膜よりも、ボトム側のＢＰＳＧ膜のりフロー性の方が良
いという点、及びリンの分子状態が三酸化リン（Ｐ２Ｏ
３）であるよりも、五酸化リン（ｐ２ｏ、＞の方がＳ
ｉ −０の結合を阻害してリフロー性が良くなると考え
られる点から判断して、トップ側における酸素の供給が
不足していたため、従来はトップ側のりフロー性が悪か
ったと考えちれる。BPSG on a semiconductor wafer installed on the top side of a vertical furnace
The bottom side BPSG film has better adhesive flow than the film, and the molecular state of phosphorus is phosphorus trioxide (P2O).
3), phosphorus pentoxide (p2o, > is S
Judging from the fact that the reflow properties are thought to be improved by inhibiting the bonding of i-0, it is considered that the reflow properties on the top side were conventionally poor due to insufficient supply of oxygen on the top side.
しかし、単純に酸素流量を増やすだけでは、ボトム側の
デポジションレートが上り、膜厚均一性を確保するのが
難しいなめ、インジェクターを設けることによりセンタ
ーからトップＨにかけて直接酸素を供給することが必要
となる。However, simply increasing the oxygen flow rate increases the deposition rate on the bottom side and makes it difficult to ensure film thickness uniformity, so it is necessary to provide an injector to directly supply oxygen from the center to the top H. becomes.
次に本発明について図面を参照して説明する。 Next, the present invention will be explained with reference to the drawings.
第１図は本発明の実施例１の断面図である。本実施例の
縦型炉は、アウターチューブ１の中にインナーチューブ
２が設置され、その中央にボート３が立ててあり、これ
に半導体ウェハ４が設置されている。FIG. 1 is a sectional view of Embodiment 1 of the present invention. In the vertical furnace of this embodiment, an inner tube 2 is installed in an outer tube 1, a boat 3 is erected in the center thereof, and a semiconductor wafer 4 is placed on the boat 3.
ボート５から成長ガスであるテトラエチルオルソシリケ
ート（ＴＥＯＳ）が導入され、このボート５のほかに、
新たに追加して立てられらなインジェクター６からも、
酸素がインナーチューブ２内に導入される。Tetraethyl orthosilicate (TEOS), which is a growth gas, is introduced from boat 5, and in addition to this boat 5,
From the newly added injector 6, which cannot be installed,
Oxygen is introduced into the inner tube 2.
インジェクター６に設けられた酸素吹き出し用のガス穴
は、センター付近がらトップ側までの間に、３〜１５個
がチューブ内側に向けて開けてあり、トップ側はど六間
隔は密になっている。ガス穴の大きさは、直径が０．２
〜０．５１である。The injector 6 has 3 to 15 gas holes for blowing out oxygen, from the center to the top side, opening toward the inside of the tube, and the top side is spaced 6 times closer together. . The size of the gas hole is 0.2 in diameter.
~0.51.
次に本発明の実施例２（図示せず）に関し説明する。実
施例１では、ＴＥＯＳがボート５がら出た後、インジェ
クター６から出た酸素が混ざり合ってＴＥＯＳの分解が
始まるが、実施例２では、ＴＥＯＳと酸素の導入ガス配
管をボート５の手前で接続し、両ガスを混合した状態で
炉内に送り込み、ＴＥＯＳと酸素との反応が速やかに行
なわれるようにしたものである。Next, a second embodiment (not shown) of the present invention will be described. In Example 1, after TEOS leaves the boat 5, the oxygen discharged from the injector 6 mixes and decomposition of TEOS begins, but in Example 2, the TEOS and oxygen introduction gas piping are connected before the boat 5. However, both gases are fed into the furnace in a mixed state so that the reaction between TEOS and oxygen can occur quickly.
以上説明したように本発明は、インジェクターにより、
酸素を縦型炉のセンター付近がらトップ側までの間に設
置された半導体ウェハに行き渡らせることができるので
、半導体ウェハに形成されるＢＰＳＧ膜のりフロー性が
改善されるという効果を有する。As explained above, the present invention uses an injector to
Since oxygen can be distributed throughout the semiconductor wafer placed between the center and the top of the vertical furnace, the flow properties of the BPSG film formed on the semiconductor wafer are improved.
第１図は本発明の実施例１の断面図、第２図は従来のＣ
ＶＤ装置の断面図である。
１・・・アウターチューブ、 ２・・・インナーチュー
ブ、３・・・ボート、４・・・半導体ウェハ、 ５・・
・ボート、６−・インジェクターFIG. 1 is a sectional view of Embodiment 1 of the present invention, and FIG. 2 is a sectional view of the conventional C
It is a sectional view of a VD device. 1... Outer tube, 2... Inner tube, 3... Boat, 4... Semiconductor wafer, 5...
・Boat, 6-・Injector
Claims (1)
用して半導体ウェハ上にボロンリンガラス膜を成長させ
る縦型減圧ＣＶＤ装置において、酸素を前記反応ガスと
同時にインジェクターを用いて導入することを特徴とす
る縦型減圧ＣＶＤ装置。 ２、反応ガス配管と酸素配管がインジェクターに入る手
前で接続されている請求項１記載の縦型減圧ＣＶＤ装置
。 ３、インジェクターはボトム側から酸素を導入し、セン
ター付近からトップ側にかけて複数の酸素の吹き出し穴
が設けられている請求項１記載の縦型減圧ＣＶＤ装置。 ４、インジェクターの酸素吹き出し穴間隔は、トップ側
ほど密に設けられている請求項３記載の縦型減圧ＣＶＤ
装置。[Claims] 1. In a vertical reduced pressure CVD apparatus for growing a boron phosphorous glass film on a semiconductor wafer using tetraethyl orthosilicate as a reactive gas, oxygen is introduced simultaneously with the reactive gas using an injector. Vertical reduced pressure CVD equipment featuring: 2. The vertical reduced pressure CVD apparatus according to claim 1, wherein the reactant gas pipe and the oxygen pipe are connected before entering the injector. 3. The vertical reduced pressure CVD apparatus according to claim 1, wherein the injector introduces oxygen from the bottom side and has a plurality of oxygen blowing holes from near the center to the top side. 4. The vertical reduced pressure CVD according to claim 3, wherein the oxygen blowing holes of the injector are spaced closer toward the top.
Device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22020290A JPH04102324A (en) | 1990-08-22 | 1990-08-22 | Vertical-type low-pressure cvd apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22020290A JPH04102324A (en) | 1990-08-22 | 1990-08-22 | Vertical-type low-pressure cvd apparatus |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH04102324A true JPH04102324A (en) | 1992-04-03 |
Family
ID=16747488
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP22020290A Pending JPH04102324A (en) | 1990-08-22 | 1990-08-22 | Vertical-type low-pressure cvd apparatus |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH04102324A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5461011A (en) * | 1994-08-12 | 1995-10-24 | United Microelectronics Corporation | Method for reflowing and annealing borophosphosilicate glass to prevent BPO4 crystal formation |
| KR100602187B1 (en) * | 2004-07-13 | 2006-07-19 | 주식회사 하이닉스반도체 | Vertical furnace type teos oxide lpcvd equipment |
-
1990
- 1990-08-22 JP JP22020290A patent/JPH04102324A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5461011A (en) * | 1994-08-12 | 1995-10-24 | United Microelectronics Corporation | Method for reflowing and annealing borophosphosilicate glass to prevent BPO4 crystal formation |
| US5828036A (en) * | 1994-08-12 | 1998-10-27 | United Microelectronics Corporation | Method and apparatus for reflowing and annealing borophosphosilicate glass |
| KR100602187B1 (en) * | 2004-07-13 | 2006-07-19 | 주식회사 하이닉스반도체 | Vertical furnace type teos oxide lpcvd equipment |
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