CN114334612A - Semiconductor device and method for manufacturing the same - Google Patents
Semiconductor device and method for manufacturing the same Download PDFInfo
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- CN114334612A CN114334612A CN202210244121.5A CN202210244121A CN114334612A CN 114334612 A CN114334612 A CN 114334612A CN 202210244121 A CN202210244121 A CN 202210244121A CN 114334612 A CN114334612 A CN 114334612A
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Abstract
The invention provides a semiconductor device and a manufacturing method thereof, wherein the manufacturing method of the semiconductor device comprises the following steps: providing a substrate, wherein a groove is formed in the substrate; placing the substrate into SACVD equipment, and forming a film layer structure on the bottom wall and the side wall of the groove by adopting an SACVD process, wherein the film layer structure comprises a nucleating layer, a first oxide layer and a second oxide layer which are formed in sequence; wherein the SACVD equipment comprises a gas inlet shower head for introducing reaction gas and a heating plate for bearing and heating the substrate, and the gas inlet shower head is arranged opposite to the heating plate; controlling the temperature of the gas inlet showerhead to reduce the frequency of forming grape-shaped particles on the surface of the film structure. The technical scheme of the invention can effectively reduce the frequency of forming grape-shaped particles on the surface of the film structure.
Description
Technical Field
The present invention relates to the field of integrated circuit manufacturing, and more particularly, to a semiconductor device and a method for manufacturing the same.
Background
Metal Oxide Semiconductor (MOS) devices are widely used in the fields of portable electronic devices, automotive electronics, industrial control, lighting, and the like, due to their advantages of low cost, mature technology, fast switching speed, and simple driving. The sub-atmospheric chemical vapor deposition (SACVD) method has good trench filling capability in High Aspect Ratio (HARP) process, is widely used in 55nm and below processes, and is also applicable to high aspect ratio (> 8: 1) trenches of SGT (shielded gate trench) MOS.
However, in the mass production process, the following problems exist when the trench is filled by the SACVD method:
as shown in fig. 1, after the film layer 13 is deposited on the sidewalls and the bottom wall of the trench 12 in the substrate 11 and the top surface of the substrate 11, the grape-shaped particles D1 shown in fig. 2 are formed on the surface of the film layer 13, and the grape-shaped particles D1 located in the trench cannot be removed from the trench in the subsequent process steps, which seriously affects the yield of the product;
therefore, it is desirable to improve the trench filling process of the SACVD method to avoid the formation of the grape-shaped particles, so as to improve the product yield.
Disclosure of Invention
The invention aims to provide a semiconductor device and a manufacturing method thereof, which can effectively reduce the frequency of forming grape-shaped particles on the surface of a film structure.
To achieve the above object, the present invention provides a method of manufacturing a semiconductor device, comprising:
providing a substrate, wherein a groove is formed in the substrate;
placing the substrate into SACVD equipment, and forming a film layer structure on the bottom wall and the side wall of the groove by adopting an SACVD process, wherein the film layer structure comprises a nucleating layer, a first oxide layer and a second oxide layer which are formed in sequence;
wherein the SACVD equipment comprises a gas inlet shower head for introducing reaction gas and a heating plate for bearing and heating the substrate, and the gas inlet shower head is arranged opposite to the heating plate; controlling the temperature of the gas inlet showerhead to reduce the frequency of forming grape-shaped particles on the surface of the film structure.
Optionally, a distance between the intake showerhead and the heating plate is controlled to control a temperature of the intake showerhead.
Optionally, controlling a distance between the intake showerhead and the heating plate to decrease by 50-100 mil when the first oxide layer and the second oxide layer are formed.
Optionally, the SACVD apparatus further comprises a heat exchange device and a conduit, the heat exchange device delivering circulating water to the intake showerhead through the conduit to control a temperature of the intake showerhead.
Optionally, the temperature of the circulating water is 55-65 ℃.
Optionally, the heating plate has a temperature of 530 ℃ to 550 ℃ when heating the substrate.
Optionally, the reaction gas comprises tetraethyl orthosilicate and ozone.
Optionally, the forming of the second oxide layer further comprises controlling a flow rate of the tetraethoxysilane to increase a deposition rate.
Optionally, the flow rate of the ethyl orthosilicate is 5500 mg/min-6500 mg/min.
The invention also provides a semiconductor device and a manufacturing method of the semiconductor device.
Compared with the prior art, the technical scheme of the invention has the following beneficial effects:
1. the method for manufacturing a semiconductor device of the present invention includes: providing a substrate, wherein a groove is formed in the substrate; placing the substrate into SACVD equipment, and forming a film layer structure on the bottom wall and the side wall of the groove by adopting an SACVD process, wherein the film layer structure comprises a nucleating layer, a first oxide layer and a second oxide layer which are formed in sequence; wherein the SACVD equipment comprises a gas inlet shower head for introducing reaction gas and a heating plate for bearing and heating the substrate, and the gas inlet shower head is arranged opposite to the heating plate; controlling the temperature of the gas inlet showerhead to reduce the frequency of forming grape-shaped particles on the surface of the film structure. The manufacturing method of the semiconductor device can effectively reduce the frequency of forming the grape-shaped particles on the surface of the film structure and effectively improve the productivity.
2. The semiconductor device of the invention is manufactured by adopting the manufacturing method of the semiconductor device, so that the frequency of forming the grape-shaped particles on the surface of the film structure can be effectively reduced.
Drawings
FIG. 1 is a schematic illustration of trench filling;
FIG. 2 is a scanning electron microscope image of a grape-shaped particle on the surface of the film layer formed by filling the trench shown in FIG. 1;
fig. 3 is a flowchart of a method of manufacturing a semiconductor device according to an embodiment of the present invention;
FIG. 4 is a schematic structural diagram of an interior of an SACVD apparatus according to an embodiment of the invention.
Detailed Description
To make the objects, advantages and features of the present invention more apparent, the semiconductor device and the method for manufacturing the same proposed by the present invention are described in further detail below. It is to be noted that the drawings are in a very simplified form and are not to precise scale, which is merely for the purpose of facilitating and distinctly claiming the embodiments of the present invention.
An embodiment of the present invention provides a method for manufacturing a semiconductor device, and referring to fig. 3, fig. 3 is a flowchart of a method for manufacturing a semiconductor device according to an embodiment of the present invention, where the method for manufacturing a semiconductor device includes:
step S1, providing a substrate, wherein a groove is formed in the substrate;
step S2, placing the substrate into an SACVD device, and forming a film structure on the bottom wall and the side wall of the trench by adopting an SACVD process, wherein the film structure comprises a nucleating layer, a first oxide layer and a second oxide layer which are formed in sequence; wherein the SACVD equipment comprises a gas inlet shower head for introducing reaction gas and a heating plate for bearing and heating the substrate, and the gas inlet shower head is arranged opposite to the heating plate; controlling the temperature of the gas inlet showerhead to reduce the frequency of forming grape-shaped particles on the surface of the film structure.
The method for manufacturing the semiconductor device according to the present embodiment will be described in more detail below.
Providing a substrate having a trench formed therein, according to step S1;
the substrate may be a base only, or include a base and a film layer formed on the base. The substrate may be any suitable substrate known to those skilled in the art, such as a semiconductor, such as silicon, germanium, silicon carbon, silicon germanium carbon, indium arsenide, and gallium arsenide; the film layer can be a dielectric layer and the like.
An etching process may be employed to form at least one of the trenches in the substrate.
According to step S2, the substrate is placed in an SACVD (sub-atmospheric chemical vapor deposition) apparatus, and a film structure is formed on the bottom wall and the sidewall of the trench by using an SACVD process, the film structure does not fill the trench, and the film structure includes a nucleation layer, a first oxide layer, and a second oxide layer, which are sequentially formed. The nucleation layer, the first oxide layer and the second oxide layer are further sequentially formed on the substrate at the periphery of the trench.
As shown in fig. 4, the SACVD apparatus includes a gas inlet showerhead 22 for introducing a reaction gas and a heating plate 21 for carrying and heating the substrate 20, and the gas inlet showerhead 22 is disposed opposite to the heating plate 21. The inlet showerhead 22 has a plurality of inlet ports 221, the inlet ports 221 being aligned with the substrate 20 to deliver reactant gases to the substrate 20. The SACVD apparatus may also include a reaction chamber (not shown) in which both the intake showerhead 22 and the heating plate 21 are located.
The reaction gas comprises ethyl orthosilicate and ozone, and the nucleating layer, the first oxide layer and the second oxide layer are all made of silicon dioxide.
An adsorption member (not shown) for adsorbing and fixing the substrate 20 may be provided on the heating plate 21; resistance wires (not shown) may be disposed in the heating plate 21, and the resistance wires are used for heating.
The SACVD process belongs to a thermal reaction process and has high sensitivity to temperature, especially the temperature of the gas inlet showerhead. If the temperature of the gas inlet shower head is low, tetraethoxysilane in the reaction gas is condensed, and condensed liquid falls on the substrate to grow into grape-shaped particles; if the temperature of the inlet showerhead is high, the adhesiveness of the film structure formed on the surface of the substrate is not good, and peeling is likely to occur. Therefore, the temperature of the intake showerhead is controlled to avoid the above-mentioned abnormality.
Wherein, because the air inlet shower head is arranged opposite to the heating plate, the temperature of the heating plate can influence the temperature of the air inlet shower head. When the distance between the air inlet shower head and the heating plate is increased, the temperature of the air inlet shower head is reduced; when the distance between the intake showerhead and the heating plate is decreased, the temperature of the intake showerhead increases.
As shown in FIG. 4, the SACVD apparatus further includes a heat exchanging device 23 and a pipe 24, the heat exchanging device 23 supplies circulating water to the intake showerhead 22 through the pipe 24, and then the temperature of the circulating water also has an influence on the temperature of the intake showerhead. As the temperature of the circulating water increases and decreases, the temperature of the intake showerhead also correspondingly increases and decreases.
Therefore, the temperature of the air inlet shower head can be controlled by controlling the distance between the air inlet shower head and the heating plate, or controlling the temperature of the circulating water, or simultaneously controlling the distance between the air inlet shower head and the heating plate and the temperature of the circulating water, so as to reduce the frequency of forming the grape-shaped particles on the surface of the film structure and reduce the frequency of peeling the film structure. And the distance between the air inlet shower head and the heating plate and the temperature of the circulating water are easy to control, so that the temperature of the air inlet shower head can be easily controlled.
When the nucleation layer is formed, a certain distance is set between the air inlet shower head and the heating plate, then, when the first oxide layer and the second oxide layer are formed, the distance between the air inlet shower head and the heating plate is preferably controlled to be reduced by 50-100 mil, so that the temperature of the air inlet shower head is increased when the first oxide layer and the second oxide layer are formed, the frequency of condensation of ethyl orthosilicate is reduced, and the frequency of formation of grape-shaped particles on the surface of the film layer structure is reduced. After the distance between the air inlet shower head and the heating plate is controlled to be reduced by 50-100 mils, the temperature of the air inlet shower head is increased to a degree that the film layer structure is not peeled off.
When the nucleation layer, the first oxide layer and the second oxide layer are formed, the temperature of the circulating water can be increased from 45-55 ℃ to 55-65 ℃, so that the temperature of the air inlet shower head is increased, the frequency of condensation of ethyl orthosilicate is reduced, the frequency of formation of grape-shaped particles on the surface of the film structure is reduced, and meanwhile, the film structure cannot be peeled.
When the substrate is heated, the temperature of the heating plate can be 530 ℃ to 550 ℃ so as to ensure the formation quality of the film layer structure.
In addition, when the trench is filled with the film structure formed by the SACVD process, the deposition rate is sacrificed for pursuing higher filling quality (for example, the thickness of the film structure at each position of the sidewall of the trench is the same), which results in insufficient productivity during mass production. Therefore, when the second oxide layer is formed, the method also comprises controlling the flow rate of the tetraethoxysilane so as to improve the deposition rate. Wherein the flow rate of the ethyl orthosilicate can be increased from 2700-3000 mg/min to 5500-6500 mg/min, and the deposition rate can be increased from 6.5A/s to 19A/s, so that the productivity is obviously improved. Then, when the second oxide layer is formed, the distance between the gas inlet shower head and the heating plate is controlled to be reduced, and simultaneously, the flow rate of the tetraethoxysilane is increased, so that the deposition rate is improved while the quality of the film layer structure is not influenced.
In addition, since the deposition rate when the second oxide layer is formed is greater than that when the first oxide layer is formed, and the uniformity of the formed second oxide layer is better than that of the formed first oxide layer, the deposition time for forming the first oxide layer can be reduced, and the deposition time for forming the second oxide layer can be increased to improve the uniformity of the film structure.
In addition, from the slicing result and the electrical property test result, the quality of the film layer structure meets the product requirement.
As is apparent from the above description, the method for manufacturing a semiconductor device according to the present invention includes: providing a substrate, wherein a groove is formed in the substrate; placing the substrate into SACVD equipment, and forming a film layer structure on the bottom wall and the side wall of the groove by adopting an SACVD process, wherein the film layer structure comprises a nucleating layer, a first oxide layer and a second oxide layer which are formed in sequence; wherein the SACVD equipment comprises a gas inlet shower head for introducing reaction gas and a heating plate for bearing and heating the substrate, and the gas inlet shower head is arranged opposite to the heating plate; controlling the temperature of the gas inlet showerhead to reduce the frequency of forming grape-shaped particles on the surface of the film structure. The manufacturing method of the semiconductor device can effectively reduce the frequency of forming the grape-shaped particles on the surface of the film structure and effectively improve the productivity.
The invention also provides a semiconductor device which is manufactured by the manufacturing method of the semiconductor device, so that the frequency of forming the grape-shaped particles on the surface of the film structure can be effectively reduced.
The above description is only for the purpose of describing the preferred embodiments of the present invention, and is not intended to limit the scope of the present invention, and any variations and modifications made by those skilled in the art based on the above disclosure are within the scope of the appended claims.
Claims (10)
1. A method of manufacturing a semiconductor device, comprising:
providing a substrate, wherein a groove is formed in the substrate;
placing the substrate into SACVD equipment, and forming a film layer structure on the bottom wall and the side wall of the groove by adopting an SACVD process, wherein the film layer structure comprises a nucleating layer, a first oxide layer and a second oxide layer which are formed in sequence;
wherein the SACVD equipment comprises a gas inlet shower head for introducing reaction gas and a heating plate for bearing and heating the substrate, and the gas inlet shower head is arranged opposite to the heating plate; controlling the temperature of the gas inlet showerhead to reduce the frequency of forming grape-shaped particles on the surface of the film structure.
2. The method of manufacturing a semiconductor device according to claim 1, wherein a distance between the intake showerhead and the heating plate is controlled to control a temperature of the intake showerhead.
3. The method of manufacturing a semiconductor device according to claim 2, wherein a distance between the intake showerhead and the heating plate is controlled to be reduced by 50mil to 100mil when the first oxide layer and the second oxide layer are formed.
4. The method of manufacturing a semiconductor device according to claim 1, wherein the SACVD apparatus further comprises a heat exchanging device and a pipe, the heat exchanging device feeding circulating water to the intake showerhead through the pipe to control a temperature of the intake showerhead.
5. The method for manufacturing a semiconductor device according to claim 4, wherein the temperature of the circulating water is 55 ℃ to 65 ℃.
6. The method of manufacturing a semiconductor device according to claim 1, wherein a temperature of the heating plate is 530 ℃ to 550 ℃ when the substrate is heated.
7. The method for manufacturing a semiconductor device according to claim 1, wherein the reaction gas comprises tetraethoxysilane and ozone.
8. The method for manufacturing a semiconductor device according to claim 7, further comprising controlling a flow rate of the tetraethoxysilane to increase a deposition rate when the second oxide layer is formed.
9. The method for manufacturing a semiconductor device according to claim 8, wherein a flow rate of the tetraethoxysilane is 5500mg/min to 6500 mg/min.
10. A semiconductor device manufactured by the method for manufacturing a semiconductor device according to any one of claims 1 to 9.
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| CN202210244121.5A CN114334612B (en) | 2022-03-14 | 2022-03-14 | Semiconductor device and method for manufacturing the same |
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| CN107039238A (en) * | 2015-10-20 | 2017-08-11 | 台湾积体电路制造股份有限公司 | Chemical vapor deposition means and the method that semiconductor devices is manufactured using the device |
| CN208829759U (en) * | 2018-09-13 | 2019-05-07 | 长鑫存储技术有限公司 | A kind of chemical vapor deposition unit and its spray head |
| CN110867408A (en) * | 2018-08-28 | 2020-03-06 | 长鑫存储技术有限公司 | Filling method of groove |
| WO2020198910A1 (en) * | 2019-03-29 | 2020-10-08 | Texas Instruments Incorporated | Trench shield isolation layer |
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2022
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Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5679404A (en) * | 1995-06-07 | 1997-10-21 | Saint-Gobain/Norton Industrial Ceramics Corporation | Method for depositing a substance with temperature control |
| WO2006000846A1 (en) * | 2004-06-08 | 2006-01-05 | Epispeed S.A. | System for low-energy plasma-enhanced chemical vapor deposition |
| KR20070083200A (en) * | 2006-02-20 | 2007-08-23 | 가부시끼가이샤 도시바 | Method for manufacturing semiconductor device |
| CN101123204A (en) * | 2006-08-10 | 2008-02-13 | 中芯国际集成电路制造(上海)有限公司 | Method for forming shallow groove separation structure and shallow groove separation structure |
| CN101231967A (en) * | 2007-01-26 | 2008-07-30 | 联华电子股份有限公司 | Shallow groove isolation layer of semiconductor element and manufacturing method thereof |
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| CN110867408A (en) * | 2018-08-28 | 2020-03-06 | 长鑫存储技术有限公司 | Filling method of groove |
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| WO2020198910A1 (en) * | 2019-03-29 | 2020-10-08 | Texas Instruments Incorporated | Trench shield isolation layer |
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Address after: 510000 No. 28, Fenghuang fifth road, Huangpu District, Guangzhou, Guangdong Patentee after: Yuexin Semiconductor Technology Co.,Ltd. Address before: 510000 No. 28, Fenghuang fifth road, Huangpu District, Guangzhou, Guangdong Patentee before: Guangzhou Yuexin Semiconductor Technology Co.,Ltd. |