New! View global litigation for patent families

US20020124800A1 - Apparatus for producing thin films - Google Patents

Apparatus for producing thin films Download PDF

Info

Publication number
US20020124800A1
US20020124800A1 US10150081 US15008102A US2002124800A1 US 20020124800 A1 US20020124800 A1 US 20020124800A1 US 10150081 US10150081 US 10150081 US 15008102 A US15008102 A US 15008102A US 2002124800 A1 US2002124800 A1 US 2002124800A1
Authority
US
Grant status
Application
Patent type
Prior art keywords
gas
substrate
pipe
process
injector
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
US10150081
Inventor
Tsuyoshi Moriyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Electronics Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation

Links

Images

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67098Apparatus for thermal treatment
    • H01L21/67109Apparatus for thermal treatment mainly by convection
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/06Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
    • C30B31/16Feed and outlet means for the gases; Modifying the flow of the gases

Abstract

The present invention provides a heat treatment apparatus capable of forming a uniform thin layer on the substrate provided with a furnace core pipe, a substrate supporting boat for supporting a lot of substrates disposed in the furnace core pipe and a process gas injector pipe having many blowing holes for spouting the process gas toward the substrate, the supporting boat having a rotation mechanism to rotate around the normal line passing through one principal face of the substrate as a rotation axis. In the apparatus, an inert gas injector pipe has the same number of inert gas or nitrogen gas blowing holes as the number of process gas blowing holes and is provided at an approximately symmetrical position relative to the center line of the rotation axis.

Description

    CROSS-REFERENCE TO RELATED PATENT APPLICATIONS
  • [0001]
    This application is a division of application Ser. No. 09/092,091, filed Jun. 5, 1998, now pending, and based on Japanese Patent Application No. 9-148126, filed Jun. 5, 1997, by Tsuyoshi MORIYAMA. This application claims only subject matter disclosed in the parent application and therefore presents no new matter.
  • BACKGROUND OF THE INVENTION
  • [0002]
    1. Field of the Invention
  • [0003]
    The present invention relates to a method of producing thin films and apparatus, such as, a heat treatment apparatus, for producing the same.
  • [0004]
    2. Description of the Related Art
  • [0005]
    A vertical type diffusion furnace has been used for forming diffusion layer films. The conventional vertical type diffusion furnace is provided, as main parts, with a furnace core cylinder, a substrate supporting boat, a process gas injector pipe having a lot of holes and disposed in the furnace core cylinder, a purge gas supply tube and a heat insulating cylinder. A lot of substrates can be mounted on the substrate supporting boat, which is provided with a mechanism to make the boat to rotate together with the heat insulating cylinder around a center axis or line of the heat insulating cylinder as a rotation axis.
  • [0006]
    In forming a diffusion layer film on the substrate by the use of this conventional vertical type furnace, a process gas is supplied from many blowing holes provided at the process gas injector pipe toward the center line of the rotation axis, so that the gas flow is made parallel to the surface of each substrate.
  • [0007]
    The process gas is supplied on the substrate from the process gas injector pipe and is spouted toward the center of the substrate by being spread perpendicular to the spouting direction of the process gas in the conventional vertical type diffusion furnace. Since the substrate is rotated by the boat rotating mechanism, a small amount of the process gas tends to be supplied at the peripheral area of the substrate while a large amount of the gas is supplied at the center of the substrate.
  • [0008]
    Accordingly, the thin film thus formed has the film thickness, which has a tendency to have a hill-like film thickness distribution in which the film thickness is gradually increased from the peripheral region to the center of the substrate with exhibiting a deficiency to become large at the center of the substrate.
  • SUMMARY OF THE INVENTION
  • [0009]
    Accordingly, it is an object of the present invention to provide a method for forming thin films capable of providing a uniform film thickness on the substrate.
  • [0010]
    It is another object of the present invention to provide an apparatus for practicing the method for forming the thin film described above.
  • [0011]
    According to one aspect of the present invention, there is provided a method of producing a thin film on a substrate disposed in a furnace core pipe, which comprises a step of making the substrate to rotate around a center axis in accompany with allowing a first gas to spout toward the substrate. The center axis is a normal line passing through the center of one principal face of the substrate. The first gas consists essentially of a process gas. In the method of the aspect of the present invention, the thin film is formed on the substrate while allowing a second gas to spout via the center axis in the colliding direction to the first gas. The second gas consists essentially of an inert gas or nitrogen gas.
  • [0012]
    It is preferable that the second gas spouts along a direction approximately opposite to the spout direction of the first gas.
  • [0013]
    It is more preferable that the locations for supplying the first gas and the second gas are approximately symmetrically positioned with each other with respect to the center axis. The first gas is simultaneously supplied with the second gas.
  • [0014]
    According to another aspect of the present invention, there is provided an apparatus for producing thin films, which comprises a furnace core pipe, a substrate supporting boat for supporting a lot of substrates disposed in the furnace core pipe, a first gas injector pipe having many first blowing holes for spouting the first gas comprising a process gas toward the substrate, the supporting boat having a rotation mechanism for allowing the boat to rotate using a normal line passing through the center of a principal face of the substrate as a rotation axis, and a second gas injector pipe having second blowing holes for spouting a second gas and being provided at an opposite position at which the second gas collides with the first gas on a surface of the substrate. The second gas consists essentially of an inert gas or nitrogen gas.
  • [0015]
    It is preferable that the first gas injector pipe is provided at an approximately symmetrical position against the second gas injection pipe relative to the center line of the rotation axis.
  • [0016]
    More preferably in the aspect of the present invention, the first and the second gas injector pipes makes a pair of pipes as a first pair of pipes. The apparatus further comprises another pair of pipes similar to the first pair of pipes as a second pair of pipes. Each of the second pair of pipes is provided in a different position from the first pair of pipes but has the same position relation relative to the center line as the first pair of pipes.
  • BRIEF DESCRIPTION OF THE DRAWINGS
  • [0017]
    [0017]FIG. 1 is an illustrative view showing a vertical type diffusion furnace as a conventional apparatus for forming thin films;
  • [0018]
    [0018]FIG. 2 is a cross sectional view taken along the line 2-2 in FIG.
  • [0019]
    [0019]FIG. 3 is an illustrative view showing the constitution of an apparatus for forming thin films in the example according to the present invention;
  • [0020]
    [0020]FIG. 4A is a cross sectional view taken along the line 4A-4A in FIG. 3;
  • [0021]
    [0021]FIG. 4B is a cross sectional view taken along the line 4B-4B in FIG. 4A;
  • [0022]
    [0022]FIG. 4C is a cross sectional view taken along the line 4C-4C in FIG. 4A; and
  • [0023]
    [0023]FIG. 5 is a cross sectional view taken along the line 5-5 in FIG. 3.
  • DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS
  • [0024]
    For easy comprehension of the present invention, a conventional vertical type furnace and a method for forming a diffusion layer using the same will be described hereinafter with reference to FIGS. 1 and 2.
  • [0025]
    Referring to FIG. 1, the major part of the diffusion furnace 7 is provided with a core furnace pipe 9 forming an outer core. A substrate supporting boat 11 is disposed on the center axis of the core furnace pipe 9. A process gas injector pipe 13 has a lot of holes and is disposed around the substrate supporting boat 11 in the core furnace pipe 9. A purge gas supply pipe 15 is also disposed for heating an atmosphere in the core furnace pipe and keeping the atmosphere at a constant temperature at the periphery of the core furnace pipe 9. A heat-insulating cylinder 17 is disposed at the bottom of the substrate supporting boat 11. A plurality of substrates 19 can be placed with a given space left therebetween on the substrate supporting boat 11. A rotation mechanism (not shown) is for allowing the substrates to rotate around the center axis of the heat-insulating cylinder 17 together with the heat-insulating cylinder 17 and is provided for the substrate supporting boat
  • [0026]
    The process gas injector pipe 13 penetrates into the furnace through the bottom of the core furnace pipe 9, and is elongated to the bottom of the furnace by making a U-turn after being elongated to the top of the furnace along the inner wall of the core furnace pipe 9. The process gas injector pipe 13 has many blowing holes not shown in the figure. These blowing holes are disposed so as to supply the process gas in parallel relation to the surface of the substrate 19 along with supplying the process gas toward the center line of the rotation axis. A diffusion layer film is formed on the substrate 19 with the gas supplied from these blowing holes.
  • [0027]
    Referring to FIG. 2 corresponding to the cross section 2-2 in FIG. 1, a process gas is supplied on the substrate 19 by means of the process gas injector pipe 13. The process gas is spouted toward the center of substrate 19 by being spread perpendicular to the spouting direction of the process gas. Because the substrate 19 is rotating by the boat rotation mechanism, relatively a small amount of the process gas is liable to be supplied at the periphery of the substrate 19 while a large amount of the process gas is supplied at the center of substrate 19. Accordingly, the film thickness of the thin film thus formed has a tendency to have a hill-like film thickness distribution in which the film thickness is gradually increased from the peripheral region to the center of the substrate 19.
  • [0028]
    By considering the problems as hitherto described, the preferred embodiment according to the present invention will be described hereinafter with reference to FIGS. 3 to 5. The parts having the same names as in the examples shown in FIG. 1 and FIG. 2 are expressed by the same reference numerals in FIG. 3 to FIG. 5.
  • [0029]
    Referring to FIG. 3, a constitution of the major part of the vertical type diffusion furnace 23 constitutes an apparatus for forming thin films. The apparatus is provided with a furnace core pipe 9, a substrate supporting boat 11 supporting the substrates, a process gas injector 13, a purge gas supply pipe 15 and a heat-insulation cylinder 17 for mounting the substrate supporting boat 11. In the apparatus, the supporting boat has a rotation mechanism (not shown in the figure) to make the substrates to rotate together with the heat-insulation cylinder 17. Its rotation axis is directed along the normal line passing through the center of the substrate 19. These components have the same construction as in the conventional examples.
  • [0030]
    The apparatus for forming thin films according to the present invention differs from the conventional one in that the former has an inert gas injector pipe 25.
  • [0031]
    Referring to FIG. 4A, the inert gas injector pipe 25 is provided at an approximately symmetrical position against the process gas injector pipe 13 relative to the center line of the rotation axis. In the similar manner to the process gas injector pipe 13, this inert gas injector pipe 25 penetrates into the furnace core pipe 9 from its bottom and makes a Uturn to be elongated to the bottom after being elongated to the top along the inner wall of the furnace core pipe 9. These two injector pipes 1 3 and 25 have the same construction with each other. The inert injector pipe 25 and the process gas injector pipe 13 may be provided in any different position on a concentric circle with a center as a center line, in which position the inert gas and the process gas will collide with each other on the substrate.
  • [0032]
    As shown in FIG. 4B and FIG. 4C, the injector pipes 13 and 25 have a plurality of gas blowing holes 27 and 29. Actually, the diameter of the injector pipes 13 and 25, and their configurations and number of the blowing holes 27 and 29 are identical with each other. The blowing holes 27 and 29 are positioned so as to spout a gas onto the surface of the substrate 19. The blowing holes 27 and 29 are so constructed as to spout the supplied gas parallel to the surface of the substrate 19 toward the center of the substrate 19 (see FIGS. 4A, 4B and 4C).
  • [0033]
    The injector pipes 13 and 25 enter the furnace core pipe 9 at a position at the bottom-half of the furnace core pipe 9, and then the injector pipes 13 and 25 travel upward in an elongated manner to a position at a top-half of the furnace core pipe 9. The injector pipes 13 and 25 have a U-shaped bend at their respective top-most positions, and then the injector pipes 13 and 25 travel downward in an elongated manner from the position at the top-half to a position at the bottom-half of the furnace core pipe 9. Each of the injector pipes 13 and 25 serves as a gas heating member in order to heat the gas supplied from these pipes 13 and 25 at the same temperature as in the furnace core pipe 9.
  • [0034]
    In the present invention, a glass plate can be used for the substrate 19 in place of a Si wafer. The substrate may not be limited to these, as far as a thin film can be formed on a surface thereof.
  • [0035]
    For forming a thin film using the apparatus for forming thin films according to the examples of the present invention, a purge gas, usually nitrogen gas, is supplied to the furnace core pipe 9 through the purge gas supply pipe 15 to purge the furnace core pipe 9. Then, a process gas is supplied to the substrate 19 via the process gas injector pipe 13. An inert gas or nitrogen gas is supplied onto the substrate 19 via ihe inert gas injector pipe 25 simultaneously with the process gas while allowing the substrate 19 to rotate at a rotation speed of 1 to 5 rpm by the rotation mechanism of the substrate supporting boat 11.
  • [0036]
    The flow rate of the inert gas or the nitrogen gas is controlled with a mass flow controller (not shown in the figure). The mass flow controller comprises a gas supply control member which is provided at the inlet of the gas injector pipes 13 and 25. The gas injector pipes 13 and 25 are situated at outside of the furnace core pipe 9.
  • [0037]
    Preferably, the inert gas or the nitrogen gas is supplied with the same flow rate as that of the process gas at a process temperature of 700 to 1000° C. The blowing rate from the blowing holes 27 is adjusted to 100 to 6000 cc/min. While the gas supply rate to be controlled is practically determined by the process temperature and by a characteristic equation, details of the procedure is omitted herein.
  • [0038]
    Referring to FIG. 5, the inert gas injector pipe 25 has the same configuration as the process gas injector pipe 13 and is disposed at the opposite side of the latter pipe 13 relative to the center of the substrate 19. The process gas and the inert gas or the nitrogen gas are supplied preferably with the same flow rate as the flow rate of the process gas at the process temperature by the use of the process injector pipe 13 and the inert gas injector pipe 25.
  • [0039]
    At the center of the substrate 19, the process gas is diluted in concentration with the inert gas or the nitrogen gas by the procedure described above. The process gas flow spreads along the direction indicated by an arrow 31 at the circumference of the substrate 19, which is increased by taking advantage of the resistance caused by the inert gas or nitrogen gas flow indicated by an arrow 33. The former function of the inert gas or the nitrogen gas serves for reducing the film thickness at the center of the substrate 19. The latter of the inert gas or the nitrogen gas serves, on the other hand, for increasing the film thickness at the circumference of the substrate 19. Uniformity of the film thickness of the film on the substrate can be improved by these two functions of the inert gas or nitrogen gas.
  • [0040]
    Now descriptions will be made as regards embodiments for forming a thin film using the apparatus for forming thin films according to the examples of the present invention.
  • EXAMPLE 1
  • [0041]
    In example 1, a phosphosilicate glass is formed on the substrate 19 as a diffusion layer using the vertical type diffusion furnace. The apparatus for forming thin films is the same constitution as shown in FIGS. 3 and 4A, 4B, and 4C. The inner diameters of the injector pipes 13 and 25 were 5 mm. The blowing holes 27 and 29 assume a circle with a diameter of 0.1 mm. The number of the blowing holes was 100 that was the same as the plate number of the substrate 19. The substrate supporting boat 11 is rotated at the rotation speed of 6 rpm. Through the same numbers of the blowing holes 27 and 29 as the plate number of the substrates were used in this example, they should not necessarily be the same with each other. The pressure in the furnace is always kept at one atmosphere.
  • [0042]
    An 8-inch Si wafer was used for the substrate 19 while a mixed gas of a phosphorous compound (POCl3), oxygen and nitrogen was used for the process gas. The gas supplied throughout the inert gas injector pipe 25 was nitrogen.
  • [0043]
    The gases were supplied at a process temperature during diffusion of 850° C. with a feed rate of the blowing gas at 850° C. of 3000 cc/min for 40 minutes.
  • [0044]
    The result showed that a film of phosphosilicate glass having a mean film thickness of 20 μm with a good uniformity of the film thickness was formed on the Si wafer. The film thickness was measured at each nine points on the substrate and uniformity of the film was judged by the proportion (%) of the difference between the maximum and minimum film thickness to the mean film thickness. The phosphosilicate glass obtained in Example 1 was improved in uniformity of the thickness by 1.5% as compared with the value of 3% obtained in the conventional art in which no nitrogen gas was supplied.
  • EXAMPLE 2
  • [0045]
    A Si oxide film was formed using the same apparatus in Example 1 while an oxidative gas was used as a process gas instead of the phosphorous compound. An 8-inch silicon (Si) wafer was used for the substrate 19 and steam was used for the oxidative gas. Nitrogen gas was used as a feed gas from the inert gas injector pipe 25. The gas was supplied at a process temperature of 950° C. with a gas blow rate at 950° C. of 3000 cc/min for 8 minutes. The interior of the furnace was always kept at an atmospheric pressure. Consequently, a silicon (Si) oxide film with a good uniformity with a thickness of 20 nm was obtained.
  • [0046]
    Although the examples in which a diffusion layer film or an oxide film was formed using the vertical type diffusion furnace as an apparatus for forming thin films were hitherto described in detail, the kind of the heat treatment device and films are by no means limited to the descriptions set forth herein.
  • [0047]
    As hitherto described, the inert gas injector pipe capable of spouting an inert gas or nitrogen gas was provided so that the gas confronts the process gas spouted from the conventional process gas injector in the apparatus for forming thin films according to the present invention. By simultaneously using the two kind of gases, it is made possible to form thin films on the substrate with uniform film thickness.
  • [0048]
    In the preferred embodiment of the present invention, only one pair of the inert gas injector pipe 25 and the process gas injector pipe 13 are provided in the furnace core pipe 9. However, a plurality of pairs of the inert gas injector pipe 25 and the process gas injector pipe 13 can be provided in different positions on a concentric circle in the furnace core pipe 9 as far as the process gas can be made uniform on a surface of the substrate, such as the Si wafer.

Claims (11)

    What is claimed is:
  1. 1. An apparatus for producing thin films comprising:
    a furnace core pipe;
    a substrate supporting boat for supporting a lot of substrates disposed in said furnace core pipe;
    a first gas injector pipe having many first blowing holes for spouting the first gas comprising a process gas toward the substrate, the supporting boat having a rotation mechanism for allowing the boat to rotate using a normal line passing through the center of a principal face of the substrate as a rotation axis; and
    a second gas injector pipe having second blowing holes for spouting a second gas and being provided at an opposite position at which the second gas collides with said first gas on a surface of the substrate, said second gas consisting essentially of an inert gas or nitrogen gas.
  2. 2. An apparatus according to claim 1, wherein said first gas injector pipe is provided at an approximately symmetrical position against the second gas injection pipe relative to the center line of the rotation axis.
  3. 3. An apparatus according to claim 2, said first and said second gas injector pipes making a pair of pipes as a first pair of pipes, said apparatus further comprising another pair of pipes similar to said first pair of pipes as a second pair of pipes, each of said second pair of pipes being provide in a different position from said first pair of pipes but having the same position relation relative to the center line as said first pair of pipes.
  4. 4. An apparatus according to claim 2, wherein the first and the second blowing holes are provided in the first and the second gas injectors, respectively, at the positions where the first and the second gases are blown along the direction in confronting relation with each other.
  5. 5. An apparatus according to claim 4, wherein said first and said second gases are simultaneously supplied with each other along the substrate face.
  6. 6. An apparatus according to claim 5, wherein said first gas and said second gas are approximately equal in a supplied amount to each other.
  7. 7. An apparatus according to claim 6, further comprising gas heating means for supplying said first and second gases, respectively, approximately at the same temperature with each other.
  8. 8. An apparatus according to claim 6, further comprising gas supply control means for supplying said first and second gases, respectively, approximately at the same flow speed with each other.
  9. 9. An apparatus according to claim 6, wherein said first gas contains a component that forms a phosphosilicate glass after a reaction.
  10. 10. An apparatus according to claim 6, wherein said first gas contains a component that forms a silicon oxide film as a reaction product after a reaction.
  11. 11. An apparatus according to claim 6, wherein the substrate consists essentially of a glass substrate or a silicon wafer and has a surface on which the thin film is formed comprises a glass surface.
US10150081 1997-06-05 2002-05-20 Apparatus for producing thin films Abandoned US20020124800A1 (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP9-148126 1997-06-05
JP14812697A JP2973971B2 (en) 1997-06-05 1997-06-05 Forming method of a heat treatment apparatus and a thin film
US09092091 US6413884B1 (en) 1997-06-05 1998-06-05 Method of producing thin films using current of process gas and inert gas colliding with each other
US10150081 US20020124800A1 (en) 1997-06-05 2002-05-20 Apparatus for producing thin films

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10150081 US20020124800A1 (en) 1997-06-05 2002-05-20 Apparatus for producing thin films

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
US09092091 Division US6413884B1 (en) 1997-06-05 1998-06-05 Method of producing thin films using current of process gas and inert gas colliding with each other

Publications (1)

Publication Number Publication Date
US20020124800A1 true true US20020124800A1 (en) 2002-09-12

Family

ID=15445848

Family Applications (2)

Application Number Title Priority Date Filing Date
US09092091 Active US6413884B1 (en) 1997-06-05 1998-06-05 Method of producing thin films using current of process gas and inert gas colliding with each other
US10150081 Abandoned US20020124800A1 (en) 1997-06-05 2002-05-20 Apparatus for producing thin films

Family Applications Before (1)

Application Number Title Priority Date Filing Date
US09092091 Active US6413884B1 (en) 1997-06-05 1998-06-05 Method of producing thin films using current of process gas and inert gas colliding with each other

Country Status (4)

Country Link
US (2) US6413884B1 (en)
EP (1) EP0884407A1 (en)
JP (1) JP2973971B2 (en)
CN (1) CN1209658A (en)

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030111013A1 (en) * 2001-12-19 2003-06-19 Oosterlaken Theodorus Gerardus Maria Method for the deposition of silicon germanium layers
US20030186560A1 (en) * 2001-04-25 2003-10-02 Kazuhide Hasebe Gaseous phase growing device
US20030224618A1 (en) * 2000-05-02 2003-12-04 Shoichi Sato Oxidizing method and oxidation system
US20040025786A1 (en) * 2002-04-05 2004-02-12 Tadashi Kontani Substrate processing apparatus and reaction container
US20080075838A1 (en) * 2006-09-22 2008-03-27 Hisashi Inoue Oxidation apparatus and method for semiconductor process
US20080178914A1 (en) * 2007-01-26 2008-07-31 Tokyo Electron Limited Substrate processing apparatus
US20080286980A1 (en) * 2005-03-01 2008-11-20 Hitachi Kokusai Electric Inc. Substrate Processing Apparatus and Semiconductor Device Producing Method
US20090074984A1 (en) * 2007-09-19 2009-03-19 Hitachi Kokusai Electric, Inc. Substrate processing apparatus and coating method
US20090151632A1 (en) * 2006-03-28 2009-06-18 Hitachi Kokusai Electric Inc. Substrate Processing Apparatus
US7691757B2 (en) 2006-06-22 2010-04-06 Asm International N.V. Deposition of complex nitride films
US7732350B2 (en) 2004-09-22 2010-06-08 Asm International N.V. Chemical vapor deposition of TiN films in a batch reactor
US7833906B2 (en) 2008-12-11 2010-11-16 Asm International N.V. Titanium silicon nitride deposition

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2973971B2 (en) * 1997-06-05 1999-11-08 日本電気株式会社 Forming method of a heat treatment apparatus and a thin film
JP4045689B2 (en) 1999-04-14 2008-02-13 東京エレクトロン株式会社 Heat treatment apparatus
US6902622B2 (en) * 2001-04-12 2005-06-07 Mattson Technology, Inc. Systems and methods for epitaxially depositing films on a semiconductor substrate
US6656284B1 (en) * 2002-06-28 2003-12-02 Jusung Engineering Co., Ltd. Semiconductor device manufacturing apparatus having rotatable gas injector and thin film deposition method using the same
US7910494B2 (en) * 2006-03-29 2011-03-22 Tokyo Electron Limited Thermal processing furnace, gas delivery system therefor, and methods for delivering a process gas thereto
KR101431197B1 (en) * 2008-01-24 2014-09-17 삼성전자주식회사 Equipment for depositing atomic layer
US20090197424A1 (en) * 2008-01-31 2009-08-06 Hitachi Kokusai Electric Inc. Substrate processing apparatus and method for manufacturing semiconductor device
KR20130043399A (en) * 2011-10-20 2013-04-30 삼성전자주식회사 Chemical vapor deposition apparatus
JP2015196839A (en) * 2014-03-31 2015-11-09 株式会社東芝 Gas supply pipe and gas treatment apparatus

Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3660179A (en) * 1970-08-17 1972-05-02 Westinghouse Electric Corp Gaseous diffusion technique
US4369031A (en) * 1981-09-15 1983-01-18 Thermco Products Corporation Gas control system for chemical vapor deposition system
US4499853A (en) * 1983-12-09 1985-02-19 Rca Corporation Distributor tube for CVD reactor
US4745088A (en) * 1985-02-20 1988-05-17 Hitachi, Ltd. Vapor phase growth on semiconductor wafers
US5015330A (en) * 1989-02-28 1991-05-14 Kabushiki Kaisha Toshiba Film forming method and film forming device
US5445676A (en) * 1991-10-23 1995-08-29 F.T.L. Co., Ltd. Method and apparatus for manufacturing semiconductor devices
US5533736A (en) * 1992-06-01 1996-07-09 Tokyo Electron Kabushiki Kaisha Thermal processing apparatus
US5637153A (en) * 1993-04-30 1997-06-10 Tokyo Electron Limited Method of cleaning reaction tube and exhaustion piping system in heat processing apparatus
US5829939A (en) * 1993-04-13 1998-11-03 Tokyo Electron Kabushiki Kaisha Treatment apparatus
US5968593A (en) * 1995-03-20 1999-10-19 Kokusai Electric Co., Ltd. Semiconductor manufacturing apparatus
US20020048860A1 (en) * 1997-06-05 2002-04-25 Tsuyoshi Moriyama Method of producing thin films using current of process gas and inert gas colliding with each other and apparatus for producing thin films for practicing the same method

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4849260A (en) * 1986-06-30 1989-07-18 Nihon Sinku Gijutsu Kabushiki Kaisha Method for selectively depositing metal on a substrate
JPH01258416A (en) 1988-04-08 1989-10-16 Nec Corp Vapor growth method
JPH03255618A (en) 1990-03-05 1991-11-14 Fujitsu Ltd Vertical type cvd device
JP2839720B2 (en) * 1990-12-19 1998-12-16 東京エレクトロン株式会社 Heat treatment apparatus
JPH05234906A (en) 1992-02-26 1993-09-10 Fujitsu Ltd Vapor growth equipment
JPH06188238A (en) 1992-12-02 1994-07-08 Toshiba Corp Heat treatment apparatus and method thereof
DE4316919C2 (en) * 1993-05-20 1996-10-10 Siegfried Dr Ing Straemke Reactor for CVD treatments
JP2773683B2 (en) 1995-05-31 1998-07-09 日本電気株式会社 Semiconductor manufacturing equipment

Patent Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3660179A (en) * 1970-08-17 1972-05-02 Westinghouse Electric Corp Gaseous diffusion technique
US4369031A (en) * 1981-09-15 1983-01-18 Thermco Products Corporation Gas control system for chemical vapor deposition system
US4499853A (en) * 1983-12-09 1985-02-19 Rca Corporation Distributor tube for CVD reactor
US4745088A (en) * 1985-02-20 1988-05-17 Hitachi, Ltd. Vapor phase growth on semiconductor wafers
US5015330A (en) * 1989-02-28 1991-05-14 Kabushiki Kaisha Toshiba Film forming method and film forming device
US5445676A (en) * 1991-10-23 1995-08-29 F.T.L. Co., Ltd. Method and apparatus for manufacturing semiconductor devices
US5533736A (en) * 1992-06-01 1996-07-09 Tokyo Electron Kabushiki Kaisha Thermal processing apparatus
US5829939A (en) * 1993-04-13 1998-11-03 Tokyo Electron Kabushiki Kaisha Treatment apparatus
US5637153A (en) * 1993-04-30 1997-06-10 Tokyo Electron Limited Method of cleaning reaction tube and exhaustion piping system in heat processing apparatus
US5968593A (en) * 1995-03-20 1999-10-19 Kokusai Electric Co., Ltd. Semiconductor manufacturing apparatus
US20020048860A1 (en) * 1997-06-05 2002-04-25 Tsuyoshi Moriyama Method of producing thin films using current of process gas and inert gas colliding with each other and apparatus for producing thin films for practicing the same method
US6413884B1 (en) * 1997-06-05 2002-07-02 Nec Corporation Method of producing thin films using current of process gas and inert gas colliding with each other

Cited By (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030224618A1 (en) * 2000-05-02 2003-12-04 Shoichi Sato Oxidizing method and oxidation system
US20030186560A1 (en) * 2001-04-25 2003-10-02 Kazuhide Hasebe Gaseous phase growing device
US20060257568A1 (en) * 2001-04-25 2006-11-16 Kazuhide Hasebe Vapor-phase growing unit
US7651733B2 (en) 2001-04-25 2010-01-26 Tokyo Electron Limited Method for forming a vapor phase growth film
US20030111013A1 (en) * 2001-12-19 2003-06-19 Oosterlaken Theodorus Gerardus Maria Method for the deposition of silicon germanium layers
US20040025786A1 (en) * 2002-04-05 2004-02-12 Tadashi Kontani Substrate processing apparatus and reaction container
US8047158B2 (en) * 2002-04-05 2011-11-01 Hitachi Kokusai Electric Inc. Substrate processing apparatus and reaction container
US20080121180A1 (en) * 2002-04-05 2008-05-29 Tadashi Kontani Substrate Processing Apparatus and Reaction Container
US7900580B2 (en) * 2002-04-05 2011-03-08 Hitachi Kokusai Electric Inc. Substrate processing apparatus and reaction container
US20080251014A1 (en) * 2002-04-05 2008-10-16 Tadashi Kontani Substrate Processing Apparatus and Reaction Container
US20080251015A1 (en) * 2002-04-05 2008-10-16 Tadashi Kontani Substrate Processing Apparatus and Reaction Container
US8261692B2 (en) 2002-04-05 2012-09-11 Hitachi Kokusai Electric Inc. Substrate processing apparatus and reaction container
US7966969B2 (en) * 2004-09-22 2011-06-28 Asm International N.V. Deposition of TiN films in a batch reactor
US7732350B2 (en) 2004-09-22 2010-06-08 Asm International N.V. Chemical vapor deposition of TiN films in a batch reactor
US20080286980A1 (en) * 2005-03-01 2008-11-20 Hitachi Kokusai Electric Inc. Substrate Processing Apparatus and Semiconductor Device Producing Method
US8251012B2 (en) * 2005-03-01 2012-08-28 Hitachi Kokusai Electric Inc. Substrate processing apparatus and semiconductor device producing method
US8176871B2 (en) * 2006-03-28 2012-05-15 Hitachi Kokusai Electric Inc. Substrate processing apparatus
US20090151632A1 (en) * 2006-03-28 2009-06-18 Hitachi Kokusai Electric Inc. Substrate Processing Apparatus
US7691757B2 (en) 2006-06-22 2010-04-06 Asm International N.V. Deposition of complex nitride films
US20080075838A1 (en) * 2006-09-22 2008-03-27 Hisashi Inoue Oxidation apparatus and method for semiconductor process
US8153534B2 (en) 2006-09-22 2012-04-10 Tokyo Electron Limited Direct oxidation method for semiconductor process
US20080178914A1 (en) * 2007-01-26 2008-07-31 Tokyo Electron Limited Substrate processing apparatus
US8211232B2 (en) * 2007-01-26 2012-07-03 Tokyo Electron Limited Substrate processing apparatus
US20090074984A1 (en) * 2007-09-19 2009-03-19 Hitachi Kokusai Electric, Inc. Substrate processing apparatus and coating method
US7833906B2 (en) 2008-12-11 2010-11-16 Asm International N.V. Titanium silicon nitride deposition

Also Published As

Publication number Publication date Type
JP2973971B2 (en) 1999-11-08 grant
EP0884407A1 (en) 1998-12-16 application
JPH10335253A (en) 1998-12-18 application
US6413884B1 (en) 2002-07-02 grant
CN1209658A (en) 1999-03-03 application
US20020048860A1 (en) 2002-04-25 application

Similar Documents

Publication Publication Date Title
US5259883A (en) Method of thermally processing semiconductor wafers and an apparatus therefor
US4854263A (en) Inlet manifold and methods for increasing gas dissociation and for PECVD of dielectric films
US5534072A (en) Integrated module multi-chamber CVD processing system and its method for processing subtrates
US6143077A (en) Chemical vapor deposition apparatus
US5547539A (en) Plasma processing apparatus and method
US6486083B1 (en) Semiconductor device manufacturing method and semiconductor manufacturing apparatus
US5370709A (en) Semiconductor wafer processing apparatus having a Bernoulli chuck
US6544341B1 (en) System for fabricating a device on a substrate with a process gas
US4388342A (en) Method for chemical vapor deposition
US5972116A (en) Method and apparatus for producing a semiconductor device
US5938850A (en) Single wafer heat treatment apparatus
US5556275A (en) Heat treatment apparatus
US5374594A (en) Gas-based backside protection during substrate processing
US5458685A (en) Vertical heat treatment apparatus
US6113705A (en) High-speed rotational vapor deposition apparatus and high-speed rotational vapor deposition thin film method
US5246500A (en) Vapor phase epitaxial growth apparatus
US20030164143A1 (en) Batch-type remote plasma processing apparatus
US6206972B1 (en) Method and apparatus for providing uniform gas delivery to substrates in CVD and PECVD processes
US5843233A (en) Exclusion guard and gas-based substrate protection for chemical vapor deposition apparatus
US5645646A (en) Susceptor for deposition apparatus
US7018940B2 (en) Method and apparatus for providing uniform gas delivery to substrates in CVD and PECVD processes
US20030209323A1 (en) Production apparatus for manufacturing semiconductor device
US5177878A (en) Apparatus and method for treating flat substrate under reduced pressure in the manufacture of electronic devices
US5536918A (en) Heat treatment apparatus utilizing flat heating elements for treating semiconductor wafers
US5884412A (en) Method and apparatus for purging the back side of a substrate during chemical vapor processing

Legal Events

Date Code Title Description
AS Assignment

Owner name: NEC ELECTRONICS CORPORATION, JAPAN

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:NEC CORPORATION;REEL/FRAME:013755/0392

Effective date: 20021101