JPH0396356U - - Google Patents

Info

Publication number
JPH0396356U
JPH0396356U JP340190U JP340190U JPH0396356U JP H0396356 U JPH0396356 U JP H0396356U JP 340190 U JP340190 U JP 340190U JP 340190 U JP340190 U JP 340190U JP H0396356 U JPH0396356 U JP H0396356U
Authority
JP
Japan
Prior art keywords
melt surface
telescope
silicon
height
measuring
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP340190U
Other languages
English (en)
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP340190U priority Critical patent/JPH0396356U/ja
Publication of JPH0396356U publication Critical patent/JPH0396356U/ja
Pending legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
JP340190U 1990-01-18 1990-01-18 Pending JPH0396356U (OSRAM)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP340190U JPH0396356U (OSRAM) 1990-01-18 1990-01-18

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP340190U JPH0396356U (OSRAM) 1990-01-18 1990-01-18

Publications (1)

Publication Number Publication Date
JPH0396356U true JPH0396356U (OSRAM) 1991-10-02

Family

ID=31507223

Family Applications (1)

Application Number Title Priority Date Filing Date
JP340190U Pending JPH0396356U (OSRAM) 1990-01-18 1990-01-18

Country Status (1)

Country Link
JP (1) JPH0396356U (OSRAM)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2008096518A1 (ja) * 2007-02-08 2008-08-14 Shin-Etsu Handotai Co., Ltd. 遮熱部材下端面と原料融液面との間の距離の測定方法、及びその距離の制御方法

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2008096518A1 (ja) * 2007-02-08 2008-08-14 Shin-Etsu Handotai Co., Ltd. 遮熱部材下端面と原料融液面との間の距離の測定方法、及びその距離の制御方法
JP2008195545A (ja) * 2007-02-08 2008-08-28 Shin Etsu Handotai Co Ltd 遮熱部材下端面と原料融液面との間の距離の測定方法、及びその距離の制御方法
US9260796B2 (en) 2007-02-08 2016-02-16 Shin-Etsu Handotai Co., Ltd. Method for measuring distance between lower end surface of heat insulating member and surface of raw material melt and method for controlling thereof

Similar Documents

Publication Publication Date Title
JPS6424089A (en) Device for adjusting initial position of melt surface
CN1268194A (zh) 控制硅单晶生长的方法与系统
CN104005083A (zh) 一种测量单晶炉熔硅液面高度的装置与方法
JPH0396356U (OSRAM)
FR2472170B1 (fr) Appareil pour apprecier la qualite d'un objet en mouvement par le controle de ses defauts de forme
DE59402422D1 (de) Vorrichtung zur Aufnahme und zum Bewickeln einer Kabeltrommel
EP0008208A3 (en) A vertical indicating device and a device for maintaining a stable vertical in two dimensions
GB792006A (en) Improvements in or relating to the preparation of single crystals of silicon
JPS6469591A (en) Method for measurement and control of molten liquid level in crystal producing device and apparatus therefor
JPH04328425A (ja) 液面位置測定方法,装置及び単結晶引上方法,装置
CN203187773U (zh) 区熔炉ccd实时监控装置
JPS62143836A (ja) 光フアイバ母材の製造装置
JP2518144Y2 (ja) 単結晶柱の直径測定装置
JPH0216409A (ja) 箱尺用垂直器
JP2004345909A (ja) 単結晶成長装置の原料棒保持装置
JPS6241075U (OSRAM)
JPH0543108Y2 (OSRAM)
JPH0399775U (OSRAM)
Nestor et al. Large laser windows from Czochralski-grown NaCl
SU1604869A1 (ru) Способ выращивани профилированных кристаллов
JPH0741416U (ja) 表面粗さ測定装置
JPS6437494A (en) Single crystal producing apparatus
JPH11263694A (ja) 石英ルツボ反転装置及び石英ルツボ反転方法
JPS62199622U (OSRAM)
JPH0194468U (OSRAM)