JPH039425B2 - - Google Patents

Description

Detailed Description of the Invention (a) Industrial Application Field The present invention relates to a probe device, particularly a probe device having a detector for sensing surface contact on the Z-axis, and a plurality of probe devices having a detector for sensing surface contact on the Z-axis. The present invention relates to multi-probe inspection having such data/sensing probes to detect surface edges and enable planarization monitoring to control excessive movement onto the surface of a semiconductor thin section.

(b) Prior Art In the formation of electronic circuits, integrated circuits can be fabricated from a semiconductor foil having a large number of matrices or microcircuits on its top surface. Generally each lamina has a large number of identical repeating matrices of similar microcircuits. The individual units or circuits are often referred to as integrated circuit chips or individual bars.

In this method, each circuit on each integrated circuit chip on a wafer is tested prior to separating the wafer into the desired integrated circuit elements or combinations thereof prior to shipping.

Since each microcircuit or integrated circuit on each wafer is typically placed with a predetermined precision with respect to adjacent circuit units, the circuit can be tested if the probe can be placed precisely over each predetermined point corresponding to the non-test circuit. . For example, several different points on one integrated circuit can be tested simultaneously.

Therefore, to explain various conventional integrated circuit inspection devices and their usage methods, conventional inspection devices place a semiconductor wafer on which integrated circuits are formed on a support stand, and place the semiconductor wafer above the semiconductor wafer. A plurality of test probes are placed facing each other. One of the multiple probes is connected via a rigid connecting member to one contact of a contact type electric switch consisting of a pair of contacts, and is opened and closed by a link mechanism that amplifies the movement of the probe. be done. Additionally, the switch is connected to a motor control circuit.
This motor control circuit is capable of supplying drive pulses to a step motor, and the step motor moves the retainer holding the plurality of probes toward or away from the semiconductor wafer in cooperation with a lifting mechanism as appropriate. To test the electrical operation of an integrated circuit using such a typical conventional testing device, first,
The semiconductor wafer is placed at a predetermined position on the support table, and then a drive pulse is supplied from the motor control circuit to the step motor to lower the retainer. As the retainer descends, the tips of the inspection probes sequentially contact the semiconductor wafer, and when the probe connected to the electric switch contacts the semiconductor wafer,
The contact of the electric switch is opened, and since it is necessary to press each test probe against the semiconductor wafer, a certain number of drive pulses are continuously supplied to the pulse motor to further lower the retainer by a certain amount. In this manner, when the test probe is pressed against the semiconductor wafer, testing of the electrical operation of the integrated circuit begins according to a predetermined procedure.

(C) Problems to be Solved by the Invention In general, semiconductor wafers are manufactured by laminating various thin films with different coefficients of thermal expansion from those of the semiconductor substrate at high temperatures during the integrated circuit formation process. After finishing, the semiconductor wafer will be warped. This warpage is not necessarily a constant amount, and varies from semiconductor wafer to semiconductor wafer. Even if the tips of multiple inspection probes are aligned and positioned on a horizontal surface or an appropriate curved surface, the inspection probes will contact the semiconductor wafer at the same time. do not. Therefore, the test probes will come into contact with the semiconductor wafer one after another after a certain period of time. In particular, if the probe connected to the electric switch contacts the semiconductor wafer later, the test probe that has already contacted the semiconductor wafer will After being pressed excessively against the semiconductor wafer and the probe connected to the electric switch comes into contact with the semiconductor wafer,
Furthermore, since the retainer is lowered by a certain amount, the test probe that was in contact with the test probe is further pressed against the semiconductor wafer, which causes damage to the semiconductor wafer.

Furthermore, in conventional integrated circuit testing equipment, the contact between the probe and the semiconductor wafer is detected using a contact-type electric switch that is opened via a rigid connecting member. In addition to a contact-type electric switch consisting of a pair of contacts, a link mechanism is required to amplify the movement of the probe and enable the switch to open and close.
Therefore, there was a problem in that the probe-accumulating portion of the inspection device became larger. This problem of increased size prevents attempts to increase the density of test probes, that is, to increase the number of test probes, especially in recent years when the degree of integration has increased markedly. I was doing it.

(d) Means and operation for solving the problem In view of the above-mentioned problems of the prior art, the first invention of the present application provides an integrated structure in which a plurality of probes, each attached to a flexible support, are formed on a semiconductor wafer. facing the circuit. Next, the plurality of probes and the semiconductor wafer are brought close to each other, and when the plurality of probes come into contact with the semiconductor wafer, the support body is deflected, and the deflection of the support body is converted into an electric signal by the piezoelectric transducer and output. After this, the probe is pressed against the semiconductor wafer while further bending the support.

On the other hand, a second invention linked to the first invention is to attach a plurality of probes to respective supports, and to adjust the elastic modulus and section modulus of the supports to the semiconductor wafer when the probes are pressed against the semiconductor wafer. A value is selected that allows the support to be elastically deformed without causing damage to the support, and a piezoelectric transducer is connected to the support, and the piezoelectric transducer deforms the elasticity of the support due to contact between the probe and the semiconductor wafer. It is designed to be able to output electrical signals based on deformation.

(E) Example The present invention includes a support, an arm connected to the support and extending in a hook shape from the support, and a probe tip connected to the arm by an adjustment mechanism such as a screw that changes the surface of the probe tip. Make use of the data probes you have. The data probe acts as an edge sensor when a detector with a sensitive material, e.g. lead zirconate-lead titanate (PZT), is fixed to the arm and is mechanically deformed when the probe tip comes into contact with a surface such as a semiconductor flake. be done. The detector then sends an electrical signal via conductors to the interface circuit and from there to the multi-probe device indicating that the probe tip has made contact with the integrated circuit.

The data probe with detector is further connected to a probe card or printed circuit board along with a plurality of data probes for testing the semiconductor thin film.
When the multi-probe device receives a Z-axis signal indicating that the sensing probe has contacted the surface of the semiconductor thin piece,
The multi-probe device moves the chuck support a fixed distance in the Z-axis direction to ensure overall data probe contact and proper scrub-in.

Sometimes in the present invention, a plurality of data/sensing probes are disposed on an electrical support, such as a printed circuit board. The data/sense probes are physically and electrically connected to the printed circuit board, each of the plurality of data/sense probes having a support and an arm connected to and extending hook-like therefrom. It has a probe tip connected to its arm. The probe tip is connected to the arm by an adjustment mechanism such as a screw that changes the surface of the probe tip. data/
The sensing probe has a sensitive material such as lead zirconate-lead titanate (PZT) fixed to the arm, and when the probe tip is mechanically deformed by contacting the surface of a semiconductor thin piece, it is used as a data probe and a Z-axis detector. Acts as. By designing the Z-axis sensing assembly to have multiple data/sensing probes rather than just multiple data probes and some edge-sensing probes, the Z-axis of each data/sensing probe can be adjusted from contact with the semiconductor flake. Contact can be monitored. The signal generated by the sensitive material on each data/sensing probe is sent to the detector circuit,
It then sends appropriate information to the multi-probe device and/or minicomputer to evaluate the data/sensing probe contact timing with the semiconductor flake to effectively monitor the Z-axis motion, thus effectively monitoring the planarization, Performs over-travel control, probe tip contact confirmation, and edge sensing.

In a method of testing integrated circuits using a Z-axis detector assembly having a plurality of data/sensing probes spaced apart on an electronic support device parallel to a semiconductor thin film, the data/sensing probe tip is Initially, initial settings must be made by ensuring that all probe tips are in the same plane.
(i.e. planarization or planar placement). After this initial setup, the movable support device supporting the semiconductor foil must be lifted into contact with the plurality of data/sensing probes. A minicomputer can be used to count the data/sensing probes in contact with the semiconductor flake based on information received from a detector circuit that receives signals from the sensitive material of each data/sensing probe. Planarization uses this information to start a clock when the semiconductor thin film first makes contact with one of the plurality of data/sensing probes, and when a signal is received that all the plurality of data/sensing probes have contacted the semiconductor thin film. The clock can be stopped and monitored. Next, the distance between the first data/sensing probe in contact with the semiconductor thin slice and the final data/sensing probe in contact with the semiconductor thin slice is calculated, and the number of clock cycles elapsed between the first contact and the final contact and the number of clock cycles between the first and final contacts are calculated. Planarization can be determined by considering the approach speed to the data/sensing probe. Following monitoring of the flattening of the data/sensing probe tip, over-travel to the semiconductor flake can be controlled by initializing the movable support of the semiconductor flake to move a predetermined distance on the Z-axis;
Only after the planarization of the data/sense probe tip has been checked and found to be within predetermined limits of planarity can the data/sense probe tip be scrubbed into the semiconductor lamina a certain distance. Next, the inspection of integrated circuit chips on semiconductor thin strips is
Test signals can be sent to the integrated circuit by the sensing probe and these signals can be evaluated.

Next, in the drawings, particularly in FIG.
shows. The probe device 10 is configured as a data probe with functional characteristics employing Z-axis control to determine the point of contact with the semiconductor thin strip. Third
The probe can be attached to a printed circuit board that is placed parallel to the semiconductor foil as shown in the figure and described below.

Structurally, the probe 10 has a first opening 1 and a second opening 1, respectively.
4,16. The support 12 can have an L-shaped structure, with the first opening 1
4 is arranged on the long side of the L-shaped structure, and the second opening 16 is arranged in the flange 15 on the short side of the L-shaped structure 12. The support 12 can be made of a conductive material, such as brass, and may also be plated with gold.

An arm 18 is attached to and extends from support 12. The extending arm can also be of L-shaped structure and the short side of the L-shaped arm can be attached to the short side of the L-shaped support structure 12. The extending arm may also be made of a conductive material such as brass, or may be plated with gold.

An adjustment screw 20 disposed within the second opening 16 in the support structure 12 passes therethrough and reaches the extension arm 18 .

A test needle or probe tip assembly 22 having a needle or probe tip 24 and a support sleeve 26 is attached to the extending arm 18 . needle 2
4 is used to contact a semiconductor foil having an integrated circuit on its top surface to obtain appropriate electrical data indicative of failure of a particular integrated circuit chip. This is needle 24
This is the main function when using as a data probe.

A sensitive material 28 may be attached to the extended arm 18 of the test lobe detector device 10 to sense Z-axis contact, ie, when the test needle 24 makes contact with the semiconductor surface. The sensitive material is bordered by a silver coating area 29. A silver coating 29 of the sensitive material 28 is used to insulate the sensitive material 28 from the rest of the conductive material of the probe device 10.
can be attached to the extension arm 18 by insulating epoxy material 30. The sensitive material 28 can have a piezoelectric substrate, ie, a monomorph or a piezoelectric sandwich-type structure called a bimorph.
The properties of the piezoelectric material are such that it can operate as a voltage generator; this property is such that when the piezoelectric material is deformed or deflected, a voltage is generated by the material itself. A pair of conducting wires or conductors 32 are connected to the sensitive material 2
It is soldered to the silver coating 29 of No.8. When the piezoelectric material is thus used as the force-sensitive material 28, a voltage is generated due to deformation and is sensed between the conductive wires 32. Conductor 3
2 are insulated from each other. Each conductor is coated with a conforming insulation to the support 1 of the probe detector test structure 10.
2 and extends through a first opening 14 in 2. A signal is then sent to a detector circuit, not shown. Lead 32 can be secured to arm 18 with epoxy 34.

As shown in FIG. 1, the entire Z-axis detector can be mounted to a printed circuit board with the long sides of the L-shaped support 12 attached to the printed circuit board 36.

2A and 2B show the warping characteristics of the piezoelectric material of FIG. 1. FIG. FIG. 2A, which is a partial side view of FIG. 1, shows a piezoelectric material 228 with a silver coating 229 affixed to the conductive strip 218 by an insulating material 230, such as an epoxy material, in its rest or rest position in the horizontal plane. . FIG. 2B shows the warpage characteristics of piezoelectric material 228 that occurs when conductive band 218 is deformed as a downward displacement resulting in warpage 250 of FIG. 2B. The warpage of the sensitive material 28 in FIG. 1 occurs because the test needle 24 in FIG. 1 contacts the surface and exerts an upward vertical force.

Next, FIG. 3 shows a multi-probe inspection device 310.
A Z-axis controlled probe detector device is shown within. Multi-probe test device 310 includes a semiconductor foil support 312, conventionally known as a chuck. The chuck 312 is disposed parallel to a printed circuit board or probe card 314. Printed circuit board 314 is located in Teledyne, California.
It can be made by TAC. The probe card 314 includes a plurality of data probes 316.
is installed. Data probe 316 monitors the electrical characteristics of the integrated circuit on the semiconductor chip on chuck 312. These electrical characteristics are monitored and evaluated by a multi-probe 318 electrically connected to a probe card 314.

In addition to the plurality of data probes 316, a probe device according to the invention in the form of probe device 10 shown in FIG. 1 is also attached to probe card 314. Although not shown in Figure 3, the sensitive material 2 in Figure 1
Probe tester 32 having a sensitive element similar to 8.
0 can be used as Z-axis control and edge detector. The signal generated by the warping of the sensitive material is sent by conductor 322 to a detector circuit 324 where it is amplified and conditioned to provide an appropriate output signal compatible with multiple probes, but the detector circuit output is either a TTL-compatible pulse or a probe contact. It is a DC value indicating. This signal is then sent by electrical connection 326 to multiprobe 318.

Data probe 316 is located in Olifornia.
Model 13742-11 sold by Teledyne.

When operationally used as a Z-axis control, the multi-probe 318 has probe device 320
Moving the chuck 312 in a direction perpendicular to the probe card 314 until it makes contact with the semiconductor foil on the probe 320 deforms the sensitive material on the probe 320 and generates a signal via the conductor 322 to the detector circuit 324.
Finally, the signal is transferred to the multi-probe 318 to stop the movement of the chuck 312 in the direction of the probe card 314. This type of Z-axis control is used to probe individual integrated circuits on semiconductor wafers. The probe detector 320 can also be used in place of a conventional edge sensor to generate an indexing sequence with the multi-probe 318 when testing a row of integrated circuits on the semiconductor foil is complete, i.e., when no touch is sensed. Detection can be performed such that the next row of integrated circuits above can be tested.

A probe card assembly 410 is shown in FIG. Probe card assembly 410 is connected to printed circuit board 4 by wire 416 using printed circuit board 412.
The structure is configured to support a plurality of data/detection probes 414 electrically connected to 12. Lines 416 provide an electrical means for transmitting and receiving signals between a plurality of data/sensing probes 414 and a multiprobe or minicomputer (not shown) for inspecting semiconductor thin sections. In FIG. 4, the data/sensing probe 414
18, and each of the plurality of data/detection probes 414 is connected to a sensitive material (not shown) shown in FIGS. 1, 2A, and 2B. , which confirms contact between the Z-axis probe tip 410 and the semiconductor flake surface 418 . This sensing on the Z axis provides a signal to the detector circuitry via lead 422 as shown in FIG. 5 and explained below.

Next, FIGS. 4 and 5 show the probe card assembly 410 (FIG. 4) and the detector circuit 5.
Indicates 00. Each data/sensing probe 414 is
It has dual functions of providing shaft contact signals and transmitting and receiving test signals to and from the integrated circuit chip. Leads 422 extending from data/sensing probe 414 electrically connect Z-axis detector 410 to detector circuitry 500. Detector circuit board 500 shows four independent detector channels used by one of a plurality of data/sensing probes. Power supply 505 is used to provide ±15V and +5V power to detector circuit 500. Each channel is an RC amplifier electrically connected to a buffer amplifier 520 with a gain of 1.
a wave generator assembly 510, an RC wave generator 510;
generates noise spikes that attenuate the response time of the voltage signal received from the data/sensing probe 414. A buffer amplifier 520 with a gain of 1 converts the voltage signal from a high impedance signal to a low impedance signal. The unity gain buffer amplifier may be model TL084N manufactured by Texas Instruments, Dallas, Texas. This low impedance signal is then sent to level discriminator assembly 530. The level discriminator assembly 530 is of the threshold type and the signal is, for example, 30 mV.
Low impedance signals are not acknowledged and are essentially blocked unless a predetermined threshold voltage of . However, if the low impedance signal is above the threshold, the discriminator output will be 5V, for example in the circuit in Figure 5.
is set to the maximum voltage of The level discriminator may be a model LM339N manufactured by Texas Instruments, Inc. of Dallas, Texas. After discriminating against low level noise signals, the nominal 5V desired signal is sent to latch circuit 540, which latches to, for example, signal OV and sends to buffer driver 550. Buffer driver 550 not only provides signals to computer and interrupt circuit board 570 but also provides the power necessary to enable light emitting diode 560. The latch circuit is a model made by Texas Instruments of Dallas, Texas.
7474N, and the buffer/driver can be the company's model 7404N. The latch signal is sent to an interrupt circuit 570, which may be a group of four units, for example, and a series of NOR circuits 57
2 and then inverted by an inverter 574 and finally sent to a series of OR circuits 576.
NOR circuit 572, inverter buffer driver 574, and OR circuit 576 are also models manufactured by Texas Instruments, Dallas, Texas.
Can be 74S260N, 7404N, 7432N.
When all data/sensing probes 414 contact semiconductor surface 418, an output interrupt signal is sent to a multiprobe unit or minicomputer (not shown). However, for example, if one of the inputs to the NOR circuit does not go high,
That is, one or more probes 414 are connected to the semiconductor thin film 4.
18, meaning a probe failure or edge condition exists. This interrupt condition allows the multiprobe to index and begin testing a new column of integrated circuit chips. When an interrupt condition occurs, the minicomputer returns a reset signal to latch circuit 540 to return the latch to its predetermined state and prepare for testing the next chip.

Next, FIG. 6 shows a multi-probe inspection apparatus 600 in conjunction with FIGS. 4, 5, and 7A-7D. A multi-probe, such as Model 1034X manufactured by Electroglas Corp. of Menlo Park, Calif., is used with a probe assembly 610 as shown in FIG.
Signal information may be provided to an interface device 614 in the form of the four-channel detector circuit 500 shown in FIG. 5 and described above. Multiprobe 600 and interface device 614 are electrically connected to a minicomputer 616, such as a model TI/960 manufactured by Texas Instruments, Dallas, Texas. The multi-probe device sends an enable signal 615 to the minicomputer 61 to start a test procedure for the semiconductor thin piece 418,
Interface device 614 sends an interrupt signal 618 and data 620 to minicomputer 616 to evaluate Z-axis contact between data/sensing probe 414 and semiconductor foil 418 . Minicomputer 616 then sends channel reset signal 622 of interface device 614 to reset latch circuit 540 as described with respect to FIG.

Next, regarding FIG. 2 and FIGS. 7A to 7D,
Figures A to 7D show a semiconductor thin piece 71 moving along the Z-axis toward a plurality of data/detection probe tips 712.
7 shows the movement of a programmable movable support 700 supporting 0.

In the method of using the multi-probe device shown in FIG.
The initial settings are adjusted so that they are flush within the same plane (mils). The multi-probe device 600 includes a semiconductor thin piece 71 having a plurality of integrated circuit chips on its upper surface.
A programmable movable support 700 supporting 0 is used. The movable support 700 travels on the Z-axis toward the plurality of probe tips 712, and when the first data/sensing probe tip contacts the surface 710, it creates the detector circuit configuration shown in FIG. 5, as described above. interface device 614 capable of
receives a voltage signal from the sensitive material that the data/sensing probe is in contact with the surface 710. This signal is transmitted via data line 620 to minicomputer 616 to inform minicomputer 616 that one or more data/sensing probe tip contacts have been made and to initiate clock operations at the time of contact. Based on the predetermined number of data/sensing probes present in the device and the number stored in the computer, the minicomputer 616 monitors the number of data/sensing probes in contact with the surface 710 until all data/sensing probes have been contacted. . However, if a data/sense probe failure or edge condition exists, the predetermined number of data/sense probes will not be reached. Predetermined clock cycle limits representing distance are stored in the minicomputer to prevent damage to the probe tip due to excessive overtravel. When this number is exceeded, minicomputer 616 generates a plug to inform multiprobe 600 to stop the movable support. This signal is sent out via data line 624. If the number of data/sensing probes in contact matches the predetermined number of probes in the minicomputer device 616;
The clock receiving the last data/sensing probe contact signal is stopped and the speed of the movable support and the first data/sensing probe in contact with the semiconductor 710 is determined.
The planarization distance between the first and last sensing probes in contact is approximately 12.7μ (0.5 mils) based on the number of clock cycles between the sensing probes and the final data/sensing probes in contact with the semiconductor foil 710. Calculations are performed to determine whether the error is within the allowable error compared to the limit. Planarization monitoring is thus achieved and a single data/sensing probe can be scrubbed into the semiconductor surface 710 without damaging the probe device tip or conductive strip, resulting in machine downtime and product loss. Guarantee. When the minicomputer receives a signal indicating that the tip of the final data/sensing probe has contacted the semiconductor thin strip 710, the minicomputer sends a signal to the multi-probe via the data line 626 to move the movable support a certain distance to probe the data/sensing probe. the tip to the semiconductor surface 710
This command over-travels or scrubs the tip into the oxide layer of semiconductor flake 710 to make good electrical contact. This excess travel distance is adjustable and can be on the order of 50.8 to 127.0 microns (2 to 5 mils). In this way, by checking the time elapsed between the first data/sensing probe in contact with the semiconductor thin piece 710 and the final data/sensing probe in contact with the semiconductor thin piece, flattening of the tip of the data/sensing probe is monitored and the semiconductor surface of the tip of the data/sensing probe is confirmed. Excessive movement to 710 can be controlled. After the current test is completed and before the next test begins, minicomputer 616 sends a reset signal to interface device 614 to reset the latch circuits and prepare the integrated circuit for the next test. In addition, test signals are transmitted to the semiconductor thin film integrated circuit via the data/sensing probe to determine whether the integrated circuit chip is operational. All information regarding data/sensing probe failures, edge conditions, and test conditions is ultimately sent to the user interface terminal printer 628. The terminal printer is a model made by Texas Instruments of Dallas, Texas.
Can be 700.

Although the invention has been described in terms of specific embodiments,
It will be apparent to those skilled in the art that various modifications may be made within the spirit and scope of the invention.

(f) Effects of the Invention As explained above, according to the first invention of the present application, after the probe contacts the semiconductor wafer, the support is further bent, thereby allowing the probe to be moved without damaging the semiconductor wafer. Because the pressure is applied to the semiconductor wafer, each semiconductor wafer has a different warp, and even when the probes contact the semiconductor wafers one after another, the support body to which the probes that are already in contact are attached bends, causing the probes to warp differently. Since the movement is absorbed, the semiconductor wafer will not be damaged even if all the probes come closer to the semiconductor wafer afterwards, and an appropriate pressing force can be obtained.

Furthermore, in the first invention of the present application, the deflection of the flexible support is converted into an electrical signal by the piezoelectric transducer, which amplifies the movement of the probe and eliminates the link mechanism that enables the switch to open and close. be able to. In other words, piezoelectric transducers can accurately convert even the slightest mechanical displacement into an electrical signal, so they do not require large opening/closing operations like contact switches, and therefore require a link mechanism to amplify the movement of the probe. can be made unnecessary. As a result, the inspection device according to the second invention of the present application not only allows a large number of probes to be arranged even in a narrow space, and can not only reduce the size of the device, but also enables highly integrated semiconductor devices, so-called super LSI This has the advantage that it can also be used to test the electrical operation of.

[Brief explanation of the drawing]

1 is a side view of a probe detector device according to the present invention; FIG. 2A is a partial side view of the probe detector of FIG. 1 showing the sensitive material attached to the detector; and FIG. 2B is a flexed state. 1st showing the sensitive material of
FIG. 3 is a partial side view of the probe detector device of the present invention; FIG.
FIG. 4 is a top view of a probe card assembly having a plurality of data/sensing probes mounted as shown in FIG. 1 in accordance with the present invention; FIG. a partial block partial circuit diagram showing the detector circuit used;
FIG. 6 is a block diagram showing a multi-probe inspection device using the probe card assembly of FIG. 4, the data detector probe of FIG. 1, and the detector circuit of FIG. FIG. 2 is a perspective view of a movable support block supporting a probe card assembly and semiconductor foil according to the invention. Explanation of symbols, 24... Probe, 18, 218
...Flexible support, 28,228...Piezoelectric conversion element.

Claims (1)

[Scope of Claims] 1. An integrated circuit testing method for testing electrical operation of the integrated circuit by bringing a plurality of probes into contact with an integrated circuit formed on a semiconductor wafer, each of which is attached to a flexible support. Further, the step of causing the plurality of probes to face the integrated circuit, and the step of bringing the plurality of probes and the semiconductor wafer close to each other, causing the support body to be deflected by the probes in contact with the semiconductor wafer, and converting the deflection into piezoelectricity. converting the electrical signals into electrical signals by an element and monitoring the electrical signals from the plurality of probes caused by the deflection of each of the supports, and when the electrical signals indicate that all the probes are in contact with the semiconductor wafer; A method for testing an integrated circuit, comprising the step of further bending the support to press the probe against the semiconductor wafer without damaging the semiconductor wafer. 2. By measuring the elapsed detection time of the electrical signals generated from the probes that first contact the semiconductor wafer and the probes that contact the semiconductor wafer last, the plurality of probes are able to contact the semiconductor wafer within a predetermined planarization limit tolerance. The method of testing an integrated circuit according to claim 1, characterized in that it is determined that there is contact. 3. The method for testing an integrated circuit according to claim 2, characterized in that if the elapsed detection time exceeds a predetermined value, movement of the plurality of probes toward the semiconductor wafer is stopped. . 4. In an integrated circuit testing device that tests the electrical operation of the integrated circuit by bringing a plurality of probes into contact with an integrated circuit formed on a semiconductor wafer, each of the plurality of probes is attached, and the probe is pressed against the semiconductor wafer. a support whose elastic modulus and section modulus are selected to values that allow elastic deformation without damaging the semiconductor wafer when the probe is in contact with the semiconductor wafer; a piezoelectric transducer that outputs an electrical signal based on elastic deformation; a means for monitoring electrical signals from a plurality of probes generated by deflection of the support; 2. An integrated circuit testing apparatus characterized by comprising means for further pressing said plurality of probes against a semiconductor wafer and supplying a test signal to the integrated circuit via said probes. 5. The monitoring means includes means for starting a clock when one of the plurality of probes contacts the semiconductor wafer, and stopping the clock upon receiving an electrical signal indicating that all of the plurality of probes have contacted the semiconductor wafer. means for calculating the distance between the probe that first contacted the semiconductor wafer and the probe that last contacted the semiconductor wafer according to the number of clock cycles; and the calculated distance and the flattening limit tolerance. 5. The integrated circuit testing apparatus according to claim 4, further comprising the step of comparing the integrated circuit.