JPH038152B2 - - Google Patents

Info

Publication number
JPH038152B2
JPH038152B2 JP56025207A JP2520781A JPH038152B2 JP H038152 B2 JPH038152 B2 JP H038152B2 JP 56025207 A JP56025207 A JP 56025207A JP 2520781 A JP2520781 A JP 2520781A JP H038152 B2 JPH038152 B2 JP H038152B2
Authority
JP
Japan
Prior art keywords
potential
signal line
vertical signal
charge
gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP56025207A
Other languages
English (en)
Japanese (ja)
Other versions
JPS57140078A (en
Inventor
Shinichi Teranishi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP56025207A priority Critical patent/JPS57140078A/ja
Publication of JPS57140078A publication Critical patent/JPS57140078A/ja
Publication of JPH038152B2 publication Critical patent/JPH038152B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/186—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors having arrangements for blooming suppression

Landscapes

  • Transforming Light Signals Into Electric Signals (AREA)
JP56025207A 1981-02-23 1981-02-23 Driving method for solid-state image pickup device Granted JPS57140078A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56025207A JPS57140078A (en) 1981-02-23 1981-02-23 Driving method for solid-state image pickup device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56025207A JPS57140078A (en) 1981-02-23 1981-02-23 Driving method for solid-state image pickup device

Publications (2)

Publication Number Publication Date
JPS57140078A JPS57140078A (en) 1982-08-30
JPH038152B2 true JPH038152B2 (enrdf_load_stackoverflow) 1991-02-05

Family

ID=12159502

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56025207A Granted JPS57140078A (en) 1981-02-23 1981-02-23 Driving method for solid-state image pickup device

Country Status (1)

Country Link
JP (1) JPS57140078A (enrdf_load_stackoverflow)

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57111183A (en) * 1980-12-27 1982-07-10 Hitachi Ltd Solid-state image pickup device

Also Published As

Publication number Publication date
JPS57140078A (en) 1982-08-30

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