JPH0251317B2 - - Google Patents

Info

Publication number
JPH0251317B2
JPH0251317B2 JP56025206A JP2520681A JPH0251317B2 JP H0251317 B2 JPH0251317 B2 JP H0251317B2 JP 56025206 A JP56025206 A JP 56025206A JP 2520681 A JP2520681 A JP 2520681A JP H0251317 B2 JPH0251317 B2 JP H0251317B2
Authority
JP
Japan
Prior art keywords
connection point
charge
control
gate
vertical signal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP56025206A
Other languages
English (en)
Japanese (ja)
Other versions
JPS57140077A (en
Inventor
Shinichi Teranishi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP56025206A priority Critical patent/JPS57140077A/ja
Publication of JPS57140077A publication Critical patent/JPS57140077A/ja
Publication of JPH0251317B2 publication Critical patent/JPH0251317B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/186—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors having arrangements for blooming suppression

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
JP56025206A 1981-02-23 1981-02-23 Solid-state image pickup devide and its driving method Granted JPS57140077A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56025206A JPS57140077A (en) 1981-02-23 1981-02-23 Solid-state image pickup devide and its driving method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56025206A JPS57140077A (en) 1981-02-23 1981-02-23 Solid-state image pickup devide and its driving method

Publications (2)

Publication Number Publication Date
JPS57140077A JPS57140077A (en) 1982-08-30
JPH0251317B2 true JPH0251317B2 (enrdf_load_stackoverflow) 1990-11-07

Family

ID=12159473

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56025206A Granted JPS57140077A (en) 1981-02-23 1981-02-23 Solid-state image pickup devide and its driving method

Country Status (1)

Country Link
JP (1) JPS57140077A (enrdf_load_stackoverflow)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0621173Y2 (ja) * 1983-08-29 1994-06-01 古河電池株式会社 蓄電池用防沫板

Also Published As

Publication number Publication date
JPS57140077A (en) 1982-08-30

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