JPS57111183A - Solid-state image pickup device - Google Patents
Solid-state image pickup deviceInfo
- Publication number
- JPS57111183A JPS57111183A JP55186617A JP18661780A JPS57111183A JP S57111183 A JPS57111183 A JP S57111183A JP 55186617 A JP55186617 A JP 55186617A JP 18661780 A JP18661780 A JP 18661780A JP S57111183 A JPS57111183 A JP S57111183A
- Authority
- JP
- Japan
- Prior art keywords
- charge
- vertical
- switch element
- diode
- occurrence
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000003990 capacitor Substances 0.000 abstract 2
- 230000008878 coupling Effects 0.000 abstract 1
- 238000010168 coupling process Methods 0.000 abstract 1
- 238000005859 coupling reaction Methods 0.000 abstract 1
- 238000002955 isolation Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
- H04N25/62—Detection or reduction of noise due to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels
- H04N25/625—Detection or reduction of noise due to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels for the control of smear
Abstract
PURPOSE:To satisfactorily reduce the occurrence of a vertical smear and to realize the reproduction of a high-quality picture, by clearing the part of the divided vertical signal line at a certain level of potential in prior to the reading of the signal charge given from each diode and then shifting the read charge to another part for isolation. CONSTITUTION:The area between a vertical signal line 4 and a horizontal switch element 7 is divided by the 1st MOS switch element 40, and the effect of the charge leaked out of a photodiode 3 via a storage capacitor 29 is prevented at a signal holding part 42. A video bias Vv is supplied to the part 42 through the 2nd MOS switch element 41, and a pulse phi3 is applied to the part 42 via a coupling capacitor 43. When a pulse phi1 for supply of the video bias has a rise, the potentials are reset for the line 4 and the part 42 respectively to clear the vertical smear charge. After this, a vertical switch element 6 is turned on, and the charge of the diode 3 is shifted to the potential of the part 42 to reduce the occurrence of the vertical smear. Thus a picture is reproduced with high quality.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP55186617A JPS57111183A (en) | 1980-12-27 | 1980-12-27 | Solid-state image pickup device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP55186617A JPS57111183A (en) | 1980-12-27 | 1980-12-27 | Solid-state image pickup device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS57111183A true JPS57111183A (en) | 1982-07-10 |
Family
ID=16191707
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP55186617A Pending JPS57111183A (en) | 1980-12-27 | 1980-12-27 | Solid-state image pickup device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS57111183A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57140078A (en) * | 1981-02-23 | 1982-08-30 | Nec Corp | Driving method for solid-state image pickup device |
-
1980
- 1980-12-27 JP JP55186617A patent/JPS57111183A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57140078A (en) * | 1981-02-23 | 1982-08-30 | Nec Corp | Driving method for solid-state image pickup device |
JPH038152B2 (en) * | 1981-02-23 | 1991-02-05 | Nippon Electric Co |
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