JPH0380336B2 - - Google Patents

Info

Publication number

JPH0380336B2

JPH0380336B2 JP25307185A JP25307185A JPH0380336B2 JP H0380336 B2 JPH0380336 B2 JP H0380336B2 JP 25307185 A JP25307185 A JP 25307185A JP 25307185 A JP25307185 A JP 25307185A JP H0380336 B2 JPH0380336 B2 JP H0380336B2

Authority

JP

Japan

Prior art keywords

region

semiconductor film

film

laser beam

insulating film

Prior art date

1985-11-11

Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)

Expired

Links

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• 239000004065 semiconductor Substances 0.000 claims description 96
• 239000013078 crystal Substances 0.000 claims description 76
• 239000000758 substrate Substances 0.000 claims description 53
• 238000000034 method Methods 0.000 claims description 18
• 238000005224 laser annealing Methods 0.000 claims description 13
• 238000010521 absorption reaction Methods 0.000 claims description 10
• 238000002844 melting Methods 0.000 claims description 9
• 230000008018 melting Effects 0.000 claims description 9
• 238000004519 manufacturing process Methods 0.000 claims description 6
• 238000000137 annealing Methods 0.000 claims description 5
• 238000002425 crystallisation Methods 0.000 claims description 4
• 230000008025 crystallization Effects 0.000 claims description 4
• 230000001154 acute effect Effects 0.000 claims description 3
• 230000015572 biosynthetic process Effects 0.000 claims 1
• 229910021420 polycrystalline silicon Inorganic materials 0.000 description 96
• VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 19
• 229910052814 silicon oxide Inorganic materials 0.000 description 19
• 238000001953 recrystallisation Methods 0.000 description 18
• 238000010586 diagram Methods 0.000 description 13
• XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 12
• XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 12
• 229910052710 silicon Inorganic materials 0.000 description 12
• 239000010703 silicon Substances 0.000 description 12
• 229910052786 argon Inorganic materials 0.000 description 6
• 239000007789 gas Substances 0.000 description 6
• 229910052581 Si3N4 Inorganic materials 0.000 description 5
• HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 5
• 238000007796 conventional method Methods 0.000 description 3
• 239000000463 material Substances 0.000 description 3
• 230000000694 effects Effects 0.000 description 2
• 238000005530 etching Methods 0.000 description 2
• 239000012212 insulator Substances 0.000 description 2
• 229920005591 polysilicon Polymers 0.000 description 2
• 230000002238 attenuated effect Effects 0.000 description 1
• 239000004020 conductor Substances 0.000 description 1
• 238000011982 device technology Methods 0.000 description 1
• 239000000155 melt Substances 0.000 description 1
• 230000010355 oscillation Effects 0.000 description 1
• 230000002093 peripheral effect Effects 0.000 description 1