JPH0379861B2 - - Google Patents

Info

Publication number
JPH0379861B2
JPH0379861B2 JP56209541A JP20954181A JPH0379861B2 JP H0379861 B2 JPH0379861 B2 JP H0379861B2 JP 56209541 A JP56209541 A JP 56209541A JP 20954181 A JP20954181 A JP 20954181A JP H0379861 B2 JPH0379861 B2 JP H0379861B2
Authority
JP
Japan
Prior art keywords
pulsed
laser
annealing
pulse
electron beam
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP56209541A
Other languages
English (en)
Japanese (ja)
Other versions
JPS58112326A (ja
Inventor
Seiichiro Kawamura
Junji Sakurai
Motoo Nakano
Hiroshi Yasuda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP20954181A priority Critical patent/JPS58112326A/ja
Publication of JPS58112326A publication Critical patent/JPS58112326A/ja
Publication of JPH0379861B2 publication Critical patent/JPH0379861B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Optics & Photonics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Recrystallisation Techniques (AREA)
JP20954181A 1981-12-26 1981-12-26 複合ビ−ムアニ−ル方法 Granted JPS58112326A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP20954181A JPS58112326A (ja) 1981-12-26 1981-12-26 複合ビ−ムアニ−ル方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP20954181A JPS58112326A (ja) 1981-12-26 1981-12-26 複合ビ−ムアニ−ル方法

Publications (2)

Publication Number Publication Date
JPS58112326A JPS58112326A (ja) 1983-07-04
JPH0379861B2 true JPH0379861B2 (enrdf_load_stackoverflow) 1991-12-20

Family

ID=16574507

Family Applications (1)

Application Number Title Priority Date Filing Date
JP20954181A Granted JPS58112326A (ja) 1981-12-26 1981-12-26 複合ビ−ムアニ−ル方法

Country Status (1)

Country Link
JP (1) JPS58112326A (enrdf_load_stackoverflow)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6092607A (ja) * 1983-10-27 1985-05-24 Agency Of Ind Science & Technol 電子ビ−ムアニ−ル装置
JPS6130025A (ja) * 1984-07-21 1986-02-12 Agency Of Ind Science & Technol 単結晶半導体薄膜の製造方法
JPS6130027A (ja) * 1984-07-21 1986-02-12 Agency Of Ind Science & Technol 単結晶半導体薄膜の製造装置
US4731338A (en) * 1986-10-09 1988-03-15 Amoco Corporation Method for selective intermixing of layered structures composed of thin solid films
JPH0670590B2 (ja) * 1988-09-10 1994-09-07 倉敷紡績株式会社 色順判定方式
JP4922578B2 (ja) * 2004-08-03 2012-04-25 株式会社アメータ 芳香拡散装置

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55148430A (en) * 1979-05-09 1980-11-19 Toshiba Corp Manufacture of semiconductor device

Also Published As

Publication number Publication date
JPS58112326A (ja) 1983-07-04

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