JPH0378714B2 - - Google Patents

Info

Publication number
JPH0378714B2
JPH0378714B2 JP58019017A JP1901783A JPH0378714B2 JP H0378714 B2 JPH0378714 B2 JP H0378714B2 JP 58019017 A JP58019017 A JP 58019017A JP 1901783 A JP1901783 A JP 1901783A JP H0378714 B2 JPH0378714 B2 JP H0378714B2
Authority
JP
Japan
Prior art keywords
transistor
bit
voltage
emitter
transistors
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58019017A
Other languages
English (en)
Japanese (ja)
Other versions
JPS58188934A (ja
Inventor
Josefu Masenasu Junia Chaaruzu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of JPS58188934A publication Critical patent/JPS58188934A/ja
Publication of JPH0378714B2 publication Critical patent/JPH0378714B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
    • G11C11/414—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the bipolar type
    • G11C11/416—Read-write [R-W] circuits 

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Static Random-Access Memory (AREA)
  • Logic Circuits (AREA)
JP58019017A 1982-04-19 1983-02-09 電圧平衡回路 Granted JPS58188934A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US06/369,970 US4555776A (en) 1982-04-19 1982-04-19 Voltage balancing circuit for memory systems
US369970 2003-02-19

Publications (2)

Publication Number Publication Date
JPS58188934A JPS58188934A (ja) 1983-11-04
JPH0378714B2 true JPH0378714B2 (enExample) 1991-12-16

Family

ID=23457700

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58019017A Granted JPS58188934A (ja) 1982-04-19 1983-02-09 電圧平衡回路

Country Status (5)

Country Link
US (1) US4555776A (enExample)
EP (1) EP0092062B1 (enExample)
JP (1) JPS58188934A (enExample)
DE (1) DE3378703D1 (enExample)
PH (1) PH20134A (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5093654A (en) * 1989-05-17 1992-03-03 Eldec Corporation Thin-film electroluminescent display power supply system for providing regulated write voltages
US5297089A (en) * 1992-02-27 1994-03-22 International Business Machines Corporation Balanced bit line pull up circuitry for random access memories

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3786442A (en) * 1972-02-24 1974-01-15 Cogar Corp Rapid recovery circuit for capacitively loaded bit lines
US3949385A (en) * 1974-12-23 1976-04-06 Ibm Corporation D.C. Stable semiconductor memory cell
US3936810A (en) * 1975-01-20 1976-02-03 Semi, Inc. Sense line balancing circuit
FR2304991A1 (fr) * 1975-03-15 1976-10-15 Ibm Agencement de circuits pour memoire semi-conductrice et son procede de fonctionnement
JPS538528A (en) * 1976-07-12 1978-01-26 Nec Corp Memory circuit
DE2738678C3 (de) * 1977-08-27 1982-03-04 Ibm Deutschland Gmbh, 7000 Stuttgart Monolithisch integrierte Speicherzelle
US4272834A (en) * 1978-10-06 1981-06-09 Hitachi, Ltd. Data line potential setting circuit and MIS memory circuit using the same
DE2855866C3 (de) * 1978-12-22 1981-10-29 Ibm Deutschland Gmbh, 7000 Stuttgart Verfahren und Schaltungsanordnung zum Betreiben eines integrierten Halbleiterspeichers
US4302823A (en) * 1979-12-27 1981-11-24 International Business Machines Corp. Differential charge sensing system
US4404662A (en) * 1981-07-06 1983-09-13 International Business Machines Corporation Method and circuit for accessing an integrated semiconductor memory

Also Published As

Publication number Publication date
JPS58188934A (ja) 1983-11-04
EP0092062B1 (en) 1988-12-14
US4555776A (en) 1985-11-26
EP0092062A2 (en) 1983-10-26
DE3378703D1 (en) 1989-01-19
PH20134A (en) 1986-10-02
EP0092062A3 (en) 1986-12-10

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