JPH0377676B2 - - Google Patents
Info
- Publication number
- JPH0377676B2 JPH0377676B2 JP57057718A JP5771882A JPH0377676B2 JP H0377676 B2 JPH0377676 B2 JP H0377676B2 JP 57057718 A JP57057718 A JP 57057718A JP 5771882 A JP5771882 A JP 5771882A JP H0377676 B2 JPH0377676 B2 JP H0377676B2
- Authority
- JP
- Japan
- Prior art keywords
- laser diode
- diode chip
- attaching
- solder material
- fragment
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000012634 fragment Substances 0.000 claims description 13
- 238000000034 method Methods 0.000 claims description 13
- 239000000463 material Substances 0.000 description 16
- 229910000679 solder Inorganic materials 0.000 description 16
- 229910052710 silicon Inorganic materials 0.000 description 12
- 239000010703 silicon Substances 0.000 description 12
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 10
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 4
- 229910052750 molybdenum Inorganic materials 0.000 description 4
- 239000011733 molybdenum Substances 0.000 description 4
- 229910052738 indium Inorganic materials 0.000 description 3
- 229910052718 tin Inorganic materials 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 150000003376 silicon Chemical class 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 229910015365 Au—Si Inorganic materials 0.000 description 1
- 229910015363 Au—Sn Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 238000003776 cleavage reaction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000008188 pellet Substances 0.000 description 1
- 230000007017 scission Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
- Semiconductor Lasers (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57057718A JPS58173880A (ja) | 1982-04-07 | 1982-04-07 | 発光素子の取付け方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57057718A JPS58173880A (ja) | 1982-04-07 | 1982-04-07 | 発光素子の取付け方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58173880A JPS58173880A (ja) | 1983-10-12 |
| JPH0377676B2 true JPH0377676B2 (de) | 1991-12-11 |
Family
ID=13063721
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57057718A Granted JPS58173880A (ja) | 1982-04-07 | 1982-04-07 | 発光素子の取付け方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58173880A (de) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6188588A (ja) * | 1984-10-08 | 1986-05-06 | Sony Corp | 半導体レ−ザの製造方法 |
| JPH073657Y2 (ja) * | 1985-03-11 | 1995-01-30 | ソニー株式会社 | 半導体レーザ製造用半導体基板 |
| US5631918A (en) * | 1993-11-22 | 1997-05-20 | Xerox Corporation | Laser diode arrays with close beam offsets |
-
1982
- 1982-04-07 JP JP57057718A patent/JPS58173880A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS58173880A (ja) | 1983-10-12 |
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