JPH0373079B2 - - Google Patents
Info
- Publication number
- JPH0373079B2 JPH0373079B2 JP56123526A JP12352681A JPH0373079B2 JP H0373079 B2 JPH0373079 B2 JP H0373079B2 JP 56123526 A JP56123526 A JP 56123526A JP 12352681 A JP12352681 A JP 12352681A JP H0373079 B2 JPH0373079 B2 JP H0373079B2
- Authority
- JP
- Japan
- Prior art keywords
- magnetic
- layer
- bubble
- current
- detector
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004020 conductor Substances 0.000 claims description 47
- 230000005381 magnetic domain Effects 0.000 claims description 17
- 229910000889 permalloy Inorganic materials 0.000 description 21
- 125000006850 spacer group Chemical group 0.000 description 20
- 238000000034 method Methods 0.000 description 15
- 239000000758 substrate Substances 0.000 description 8
- 239000007789 gas Substances 0.000 description 6
- 238000000992 sputter etching Methods 0.000 description 5
- 229910000881 Cu alloy Inorganic materials 0.000 description 4
- 238000001514 detection method Methods 0.000 description 4
- 239000010408 film Substances 0.000 description 4
- WPPDFTBPZNZZRP-UHFFFAOYSA-N aluminum copper Chemical compound [Al].[Cu] WPPDFTBPZNZZRP-UHFFFAOYSA-N 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000010292 electrical insulation Methods 0.000 description 2
- VZGDMQKNWNREIO-UHFFFAOYSA-N tetrachloromethane Chemical compound ClC(Cl)(Cl)Cl VZGDMQKNWNREIO-UHFFFAOYSA-N 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- DDMOUSALMHHKOS-UHFFFAOYSA-N 1,2-dichloro-1,1,2,2-tetrafluoroethane Chemical compound FC(F)(Cl)C(F)(F)Cl DDMOUSALMHHKOS-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000002223 garnet Substances 0.000 description 1
- 230000005764 inhibitory process Effects 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000001272 nitrous oxide Substances 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
- G11C19/02—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements
- G11C19/08—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements using thin films in plane structure
- G11C19/0866—Detecting magnetic domains
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56123526A JPS5826384A (ja) | 1981-08-06 | 1981-08-06 | 電流駆動型磁気バブル素子 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56123526A JPS5826384A (ja) | 1981-08-06 | 1981-08-06 | 電流駆動型磁気バブル素子 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5826384A JPS5826384A (ja) | 1983-02-16 |
| JPH0373079B2 true JPH0373079B2 (cs) | 1991-11-20 |
Family
ID=14862788
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56123526A Granted JPS5826384A (ja) | 1981-08-06 | 1981-08-06 | 電流駆動型磁気バブル素子 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5826384A (cs) |
-
1981
- 1981-08-06 JP JP56123526A patent/JPS5826384A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5826384A (ja) | 1983-02-16 |
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