JPH0371797B2 - - Google Patents

Info

Publication number
JPH0371797B2
JPH0371797B2 JP57099619A JP9961982A JPH0371797B2 JP H0371797 B2 JPH0371797 B2 JP H0371797B2 JP 57099619 A JP57099619 A JP 57099619A JP 9961982 A JP9961982 A JP 9961982A JP H0371797 B2 JPH0371797 B2 JP H0371797B2
Authority
JP
Japan
Prior art keywords
quantum well
carrier confinement
layer
layers
well layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP57099619A
Other languages
English (en)
Japanese (ja)
Other versions
JPS58216489A (ja
Inventor
Akira Sugimura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP9961982A priority Critical patent/JPS58216489A/ja
Publication of JPS58216489A publication Critical patent/JPS58216489A/ja
Publication of JPH0371797B2 publication Critical patent/JPH0371797B2/ja
Granted legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/2203—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure with a transverse junction stripe [TJS] structure

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Semiconductor Lasers (AREA)
JP9961982A 1982-06-10 1982-06-10 量子井戸型半導体レ−ザ Granted JPS58216489A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9961982A JPS58216489A (ja) 1982-06-10 1982-06-10 量子井戸型半導体レ−ザ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9961982A JPS58216489A (ja) 1982-06-10 1982-06-10 量子井戸型半導体レ−ザ

Publications (2)

Publication Number Publication Date
JPS58216489A JPS58216489A (ja) 1983-12-16
JPH0371797B2 true JPH0371797B2 (enrdf_load_stackoverflow) 1991-11-14

Family

ID=14252103

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9961982A Granted JPS58216489A (ja) 1982-06-10 1982-06-10 量子井戸型半導体レ−ザ

Country Status (1)

Country Link
JP (1) JPS58216489A (enrdf_load_stackoverflow)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0712103B2 (ja) * 1985-07-26 1995-02-08 株式会社日立製作所 半導体レ−ザ素子
US5467364A (en) * 1992-02-05 1995-11-14 Mitsui Petrochemical Industries, Ltd. Semiconductor laser element and laser device using the same element
USRE36431E (en) * 1992-02-05 1999-12-07 Mitsui Chemicals, Inc. Semiconductor laser element and laser device using the same element
CA2138912C (en) * 1993-12-24 1999-05-04 Shoji Ishizaka Semiconductor laser device

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56164588A (en) * 1980-05-23 1981-12-17 Nippon Telegr & Teleph Corp <Ntt> Semiconductor light amplifier

Also Published As

Publication number Publication date
JPS58216489A (ja) 1983-12-16

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