JPH0369874B2 - - Google Patents
Info
- Publication number
- JPH0369874B2 JPH0369874B2 JP61033826A JP3382686A JPH0369874B2 JP H0369874 B2 JPH0369874 B2 JP H0369874B2 JP 61033826 A JP61033826 A JP 61033826A JP 3382686 A JP3382686 A JP 3382686A JP H0369874 B2 JPH0369874 B2 JP H0369874B2
- Authority
- JP
- Japan
- Prior art keywords
- sintered body
- metallized layer
- group
- elements
- aluminum nitride
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 38
- 239000000463 material Substances 0.000 claims description 17
- 238000000034 method Methods 0.000 claims description 15
- 238000004519 manufacturing process Methods 0.000 claims description 10
- 239000000758 substrate Substances 0.000 claims description 7
- 229910052782 aluminium Inorganic materials 0.000 claims description 5
- 239000004065 semiconductor Substances 0.000 claims description 5
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 4
- 229910052796 boron Inorganic materials 0.000 claims description 4
- 229910052750 molybdenum Inorganic materials 0.000 claims description 4
- 239000011733 molybdenum Substances 0.000 claims description 4
- 150000004767 nitrides Chemical class 0.000 claims description 4
- 239000000853 adhesive Substances 0.000 claims description 3
- 230000001070 adhesive effect Effects 0.000 claims description 3
- 238000001465 metallisation Methods 0.000 claims description 3
- 230000000737 periodic effect Effects 0.000 claims description 3
- 229910052761 rare earth metal Inorganic materials 0.000 claims description 3
- 229910052715 tantalum Inorganic materials 0.000 claims description 3
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 3
- 229910052721 tungsten Inorganic materials 0.000 claims description 3
- 239000010937 tungsten Substances 0.000 claims description 3
- 230000001590 oxidative effect Effects 0.000 claims description 2
- 239000007789 gas Substances 0.000 description 5
- LTPBRCUWZOMYOC-UHFFFAOYSA-N Beryllium oxide Chemical compound O=[Be] LTPBRCUWZOMYOC-UHFFFAOYSA-N 0.000 description 4
- 238000005219 brazing Methods 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 238000005476 soldering Methods 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 3
- 229910052692 Dysprosium Inorganic materials 0.000 description 3
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 3
- 239000000470 constituent Substances 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 238000005304 joining Methods 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- 229910052726 zirconium Inorganic materials 0.000 description 3
- 229910052684 Cerium Inorganic materials 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 239000001856 Ethyl cellulose Substances 0.000 description 2
- ZZSNKZQZMQGXPY-UHFFFAOYSA-N Ethyl cellulose Chemical compound CCOCC1OC(OC)C(OCC)C(OCC)C1OC1C(O)C(O)C(OC)C(CO)O1 ZZSNKZQZMQGXPY-UHFFFAOYSA-N 0.000 description 2
- 229910052779 Neodymium Inorganic materials 0.000 description 2
- 229910052777 Praseodymium Inorganic materials 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229920001249 ethyl cellulose Polymers 0.000 description 2
- 235000019325 ethyl cellulose Nutrition 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052735 hafnium Inorganic materials 0.000 description 2
- 230000017525 heat dissipation Effects 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N palladium Substances [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 229910052727 yttrium Inorganic materials 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- 229910020598 Co Fe Inorganic materials 0.000 description 1
- 229910002519 Co-Fe Inorganic materials 0.000 description 1
- 229910052691 Erbium Inorganic materials 0.000 description 1
- 229910052693 Europium Inorganic materials 0.000 description 1
- 229910052688 Gadolinium Inorganic materials 0.000 description 1
- 229910052689 Holmium Inorganic materials 0.000 description 1
- 229910052765 Lutetium Inorganic materials 0.000 description 1
- 239000000020 Nitrocellulose Substances 0.000 description 1
- 229910052772 Samarium Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910052771 Terbium Inorganic materials 0.000 description 1
- 229910052775 Thulium Inorganic materials 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 229910052769 Ytterbium Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- 239000011344 liquid material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229920001220 nitrocellulos Polymers 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 230000001988 toxicity Effects 0.000 description 1
- 231100000419 toxicity Toxicity 0.000 description 1
Description
［発明の技術分野］
本発明は、導電性メタライズ層を有する窒化ア
ルミニウム焼結体の製造方法に関しさらに詳しく
は、窒化アルミニウム焼結体母材との高温密着性
が良好な導電性メタライズ層を有し、とくに、半
導体用基板として有用な導電性メタライズ層を有
する窒化アルミニウム焼結体の製造方法に関す
る。
［発明の技術的背景とその問題点］
窒化アルミニウム（AlN）焼結体は、、絶縁
性、耐腐食性および耐熱衝撃性に優れ、高い高温
強度を有するとともに、高い熱伝導性を有するた
め、各種構造材、各種電子・電気部品などの素材
として、また、とくに近年では、放熱性が充分で
ないアルミナ（Al2O3）や毒性があるため取扱い
が繁雑なベリリア（BeO）に代わる半導体用基
板の材料として注目されている。
ところで、AlN焼結体をどのような用途で使
用するにせよ、この焼結体と何らかの金属部材と
を接合する必要性が生じる場合が多く、その際、
AlN焼結体の表面に導電性メタライズ層を形成
することが一般に行なわれている。
このようなAlN焼結体へのメタライズ法とし
ては、焼結体表面に酸化物層（Al2O3）形成後、
直接銅（Cu）箔を接合するダイレクトボンドカ
ツパー法（DBC法）、銅（Cu）、金（Au）、銀
（Ag）−パラジウム（Pd）などを使用した厚膜法
などが知られている。
しかしながら、上記の方法を適用してAlN焼
結体表面に形成された導電性メタライズ層は、い
ずれも、とくに高温においてAlN焼結体との密
着性が悪いため、ろう付や高温はんだ付など700
℃程度以上の温度で行なう接合方法を適用して他
部材と接合することが困難であり、また、仮に接
合することができたとしても、他部材が接合され
たAlN焼結体を高温で使用したときにメタライ
ズ層が焼結体表面から剥離してしまい、結果的に
他部材の脱落が生ずるという問題がある。とく
に、このような導電性メタライズ層を有する
AlN焼結体を電子回路用放熱基板として使用し
た場合、この基板は低温から高温へ、また、高温
から低温へという温度変化（熱サイクル）を受け
ることになり、メタライズ層の構成成分とAlN
との熱膨張係数の差に起因して、メタライズ層に
クラツクが生ずるという不都合がある。
［発明の目的］
本発明は、従来のかかる問題を解消し、とく
に、高温、還元雰囲気中での接合強度が高い導電
性メタライズ層を有し、該メタライズ層に対する
ろう付、はんだ付などの接合信頼性が高い窒化ア
ルミニウム焼結体の製造方法の提供を目的とす
る。
［発明の概要］
本発明者らは、主として、AlN焼結体を母材
として、その表面に塗布されるメタライズ層とな
るペーストに含有される元素の組合せに焦点を絞
つて鋭意研究を重ねた結果、上記目的を達成しう
る特定の組合せを見出し、その効果を確認して本
発明を完成するに至つた。
すなわち、本発明の窒化アルミニウム焼結体
は、
モリブデン、タングステンおよびタンタルより
なる群（第１の群）から選ばれた１種または２種
以上の単体、ならびにＢ、Al、周期律表の第
ａ族元素および希土類元素よりなる群（第２の
群）から選ばれた元素の１種または２種以上の窒
化物および／または酸化物とを、粘着剤に分散さ
せてペーストを作成し、前記ペーストを窒化アル
ミニウム焼結体母材の表面の少なくとも一部に塗
布した後乾燥させ、非酸化性雰囲気中で加熱処理
して導電性メタライズ層を形成することを特徴と
するものである。
本発明の導電性メタライズ層を有する窒化アル
ミニウム焼結体の製方法は、前述したように、該
焼結体を母材として、その表面に塗布された導電
性メタライズ層となるペーストに含有される元素
の組合せに特徴を有するものであり、AlN焼結
体自体の物性などはとくに制限されるものではな
い。
導電性メタライズ層となるペーストに含有され
る元素のうち、第１の群に属する元素、すなわ
ち、モリブデン（Mo）、タングステン（Ｗ）お
よびタンタル（Ta）は、耐熱性に優れ、かつ、
AlN焼結体母材の熱膨張係数とほぼ近似した熱
膨張係数を有するものであり、該メタライズ層の
耐熱性および耐熱サイクル特性の向上に資する成
分である。これらの元素は上記したような特性を
最も良く示す単体を用いる。
また、これらの元素は、１種または２種以上が
組合わされて使用される。
ついで、導電性メタライズ層の成分元素のう
ち、第２の群に属する元素、すなわち、周期律表
の第族元素のうちのＢおよびAl、第ａ族元
素（Ti、Zr、Hf）および希土類元素（Sc、Ｙ、
La、Ce、Pr、Nd、Pm、Sm、Eu、Gd、Tb、
Dy、Ho、Er、Tm、Yb、Lu）は、後述するメ
タライズ層形成工程、すなわち加熱工程におい
て、AlNとのぬれ性が優れており、導電性メタ
ライズ層とAlN焼結体との密着性の向上に資す
る成分である。なお、この第２の群に属する元素
のうち、好ましいものはＢ、Al、Ti、Zr、Hf、
Ｙ、Ce、Pr、Nd、Dy、Smなどであり、とくに
好ましいものは、Al、Ti、Zr、Ｙ、Dy、Smな
どである。
これらの元素は、１種または２種以上の酸化物
および／または窒化物が組合わされて使用され
る。
いま、このペーストに含有される元素として
Tiを例にとると、Tiは導電性メタライズ層の構
成相において、例えば、TiN、TiO2などが使用
できる。
また、本発明において、第１の群に属する元素
と第２の群に属する元素との構成比はとくに限定
されるものではなく、使用する元素の種類あるい
は組合わせによつて適宜設定すればよいが、例え
ば、第１の群に属する元素の合計と第２の群に属
する元素の合計との比が、原子比で99：１〜１：
99であればよく、90：10〜10：90程度に設定され
ることが好ましい。
本発明の導電性メタライズ層を有する窒化アル
ミニウム焼結体の製造方法は、例えば、次のとお
りである。
すなわち、まず、常法により焼結して得られた
AlN焼結体母材の所望の面に、上記第１の群お
よび第２の群からそれぞれ選択された元素を含む
ペーストを塗布する。このペーストは、具体的に
は、上記第１の群から選ばれた単体と第２の群か
ら選ばれた元素の窒化物および／または酸化物を
エチルセルロース、ニトロセルロースなどの粘着
剤に分散せしめて得られる。また、かかるペース
ト中には、上記第１および第２の群から選ばれた
元素が総量で全体の５重量％以上含有されている
ことが望ましい。
ついで、上記のようにAlN焼結体母材表面に
ペーストしくは液状物を塗布したのち、乾燥させ
て、しかるのち、加熱処理することによりメタラ
イズ層を形成する。このときの加熱温度は、成分
元素の種類および組合わせによつても異なるが、
通常は、1100〜1800℃程度である。また、雰囲気
ガスとしては、窒素ガス、ドライホーミングガ
ス、ウエツトホーミングガスなどを使用でき、処
理時間は0.5〜２時間程度に設定することが好ま
しい。
さらに、このようにして得られた導電性メタラ
イズ層を有するAlN焼結体に他部材を接合する
場合、まず、この導電性メタライズ層にNiなど
のメキを施し、続いて、ホーミングガス中、600
〜850℃で該メツキ層をアニールし、しかるのち、
ろう付もしくははんだ付を行なえばよい。
［発明の実施例］
実施例 １
モリブデン（Mo）粉末と窒化チタン（TiN）
粉末とエチルセルロースとを重量比で８：２：１
で混合して原料ペーストを調製し、該ペーストを
Y2O3を３重量％含有するAlN焼結体母材の表面
に塗布した。これを乾燥させたのち、N2ガス中、
約1700℃で１時間加熱することにより導電性メタ
ライズ層を形成した。得られた導電性メタライズ
層をＸ線回折法により調べた結果、Mo、AlN、
YAGおよびTiNが観察された。
ついで、この導電性メタライズ層のAlN焼結
体母材に対する接合強度を評価するために、該メ
タライズ層にNiメツキを施してこれをホーミン
グガス中、約800℃でアニールしたのち、コバー
ル（Ni−Co−Fe合金）製ワイヤーの先端部をろ
う付した。そして、該ワイヤーをこのメタライズ
面と垂直な方向に引張ることにより接合強度
（Kg／mm2）を測定したところ２Kg／mm2以上であつ
た。
実施例 ２〜18
前述した第１および第２の群に属する元素の種
類の様々に代えて上記実施例１と同様にして導電
性メタライズ層を有するAlN焼結体を製造し、
その評価試験を行ない、その結果をメタライズ層
用原料ペーストの組成、メタライズ条件および得
られたメタライズ層の構成相とともに表に示し
た。
表からも明らかなように、本発明の製造方法に
よつて得られる窒化アルミニウム焼結体は、はん
だ付、ろう付工程後もAlN焼結体母材との高い
接合強度を有する導電性メタライズ層を備えてい
るため、他部材との接合の信頼性も高く、幅広い
用途に利用することが可能である。とくに、
AlN焼結体自体は前述したように極めて高い熱
伝導率（Al2O3の約５倍）を有し、また、の熱膨
張係数が半導体素子を構成するSiと極めて近似し
ているなど、半導体用基板材料としてその利用価
値は大きい。
[Technical Field of the Invention] The present invention relates to a method for producing an aluminum nitride sintered body having a conductive metallized layer, and more particularly, to a method for manufacturing an aluminum nitride sintered body having a conductive metallized layer having good high-temperature adhesion to an aluminum nitride sintered body base material. In particular, the present invention relates to a method of manufacturing an aluminum nitride sintered body having a conductive metallized layer useful as a semiconductor substrate. [Technical background of the invention and its problems] Aluminum nitride (AlN) sintered bodies have excellent insulation, corrosion resistance, and thermal shock resistance, high high temperature strength, and high thermal conductivity. It is used as a material for various structural materials and various electronic and electrical parts, and especially in recent years, it is used as a semiconductor substrate to replace alumina (Al 2 O 3 ), which does not have sufficient heat dissipation, and beryllia (BeO), which is difficult to handle due to its toxicity. It is attracting attention as a material for By the way, no matter what purpose an AlN sintered body is used for, there is often a need to join this sintered body to some kind of metal member, and in that case,
It is common practice to form a conductive metallized layer on the surface of an AlN sintered body. As a metallization method for such an AlN sintered body, after forming an oxide layer (Al 2 O 3 ) on the surface of the sintered body,
Known methods include the direct bond cutter method (DBC method) that directly bonds copper (Cu) foil, and the thick film method that uses copper (Cu), gold (Au), silver (Ag)-palladium (Pd), etc. There is. However, the conductive metallized layer formed on the surface of the AlN sintered body by applying the above method has poor adhesion to the AlN sintered body, especially at high temperatures.
It is difficult to join other parts by applying a joining method that is performed at temperatures above about 30°F, and even if it were possible to join them, it is difficult to use the AlN sintered body with other parts joined at high temperatures. When this happens, the metallized layer peels off from the surface of the sintered body, resulting in the problem of other components falling off. In particular, with such a conductive metallized layer
When an AlN sintered body is used as a heat dissipation substrate for electronic circuits, this substrate is subjected to temperature changes (thermal cycles) from low to high temperatures and from high to low temperatures, and the constituent components of the metallized layer and AlN
There is an inconvenience that cracks occur in the metallized layer due to the difference in thermal expansion coefficient between the metallized layer and the metallized layer. [Object of the Invention] The present invention solves the conventional problems, and particularly has a conductive metallized layer with high bonding strength at high temperatures and in a reducing atmosphere, and has a conductive metallized layer that can be bonded to the metallized layer by brazing, soldering, etc. The purpose of the present invention is to provide a method for manufacturing a highly reliable aluminum nitride sintered body. [Summary of the Invention] The present inventors have conducted extensive research mainly focusing on the combination of elements contained in the paste that forms the metallized layer applied to the surface of the AlN sintered body as a base material. As a result, they found a specific combination that can achieve the above object, confirmed its effects, and completed the present invention. That is, the aluminum nitride sintered body of the present invention contains one or more elements selected from the group consisting of molybdenum, tungsten, and tantalum (first group), as well as B, Al, and group a of the periodic table. One or more nitrides and/or oxides of elements selected from the group consisting of group elements and rare earth elements (second group) are dispersed in an adhesive to create a paste, and the paste The method is characterized in that a conductive metallized layer is formed by coating at least a portion of the surface of an aluminum nitride sintered body base material, drying it, and heat-treating it in a non-oxidizing atmosphere. As described above, the method for producing an aluminum nitride sintered body having a conductive metallized layer according to the present invention uses the sintered body as a base material, and contains the sintered body in a paste that becomes a conductive metallized layer applied to the surface of the sintered body. It is characterized by the combination of elements, and the physical properties of the AlN sintered body itself are not particularly limited. Among the elements contained in the paste that becomes the conductive metallized layer, the elements belonging to the first group, namely molybdenum (Mo), tungsten (W) and tantalum (Ta), have excellent heat resistance and
It has a thermal expansion coefficient almost similar to that of the AlN sintered body base material, and is a component that contributes to improving the heat resistance and heat cycle resistance of the metallized layer. These elements are used in the form of a simple substance that best exhibits the above-mentioned characteristics. Further, these elements may be used alone or in combination of two or more. Next, among the component elements of the conductive metallized layer, elements belonging to the second group, that is, B and Al of the group elements of the periodic table, group a elements (Ti, Zr, Hf), and rare earth elements (Sc,Y,
La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb,
Dy, Ho, Er, Tm, Yb, Lu) have excellent wettability with AlN in the metallized layer formation process, that is, the heating process, which will be described later, and improve the adhesion between the conductive metallized layer and the AlN sintered body. It is an ingredient that contributes to improvement. Among the elements belonging to this second group, preferable ones are B, Al, Ti, Zr, Hf,
Examples include Y, Ce, Pr, Nd, Dy, and Sm, and particularly preferred are Al, Ti, Zr, Y, Dy, and Sm. These elements are used singly or in combination of two or more oxides and/or nitrides. Now, the elements contained in this paste are
Taking Ti as an example, TiN, TiO2, etc. can be used as a constituent phase of the conductive metallized layer. Further, in the present invention, the composition ratio of the elements belonging to the first group and the elements belonging to the second group is not particularly limited, and may be set as appropriate depending on the type or combination of elements used. However, for example, the ratio of the total of elements belonging to the first group to the total of elements belonging to the second group is 99:1 to 1:
99 is sufficient, and it is preferably set to about 90:10 to 10:90. The method for producing an aluminum nitride sintered body having a conductive metallized layer according to the present invention is, for example, as follows. That is, first, the material obtained by sintering by a conventional method
A paste containing an element selected from the first group and the second group is applied to a desired surface of the AlN sintered base material. Specifically, this paste is made by dispersing an element selected from the first group and a nitride and/or oxide of an element selected from the second group in an adhesive such as ethyl cellulose or nitrocellulose. can get. Further, it is desirable that the paste contains elements selected from the first and second groups in a total amount of 5% by weight or more. Next, as described above, a paste or liquid material is applied to the surface of the AlN sintered body base material, dried, and then heat treated to form a metallized layer. The heating temperature at this time varies depending on the type and combination of component elements, but
Usually, the temperature is about 1100 to 1800°C. Further, as the atmospheric gas, nitrogen gas, dry homing gas, wet homing gas, etc. can be used, and the processing time is preferably set to about 0.5 to 2 hours. Furthermore, when joining other parts to the AlN sintered body having the conductive metallized layer obtained in this way, the conductive metallized layer is first plated with Ni, etc.
Anneal the plating layer at ~850°C, then
Brazing or soldering may be used. [Embodiments of the invention] Example 1 Molybdenum (Mo) powder and titanium nitride (TiN)
Weight ratio of powder and ethyl cellulose is 8:2:1
Prepare a raw material paste by mixing with
It was applied to the surface of an AlN sintered base material containing 3% by weight of Y 2 O 3 . After drying this, in N2 gas,
A conductive metallized layer was formed by heating at about 1700° C. for 1 hour. As a result of examining the obtained conductive metallized layer by X-ray diffraction method, it was found that Mo, AlN,
YAG and TiN were observed. Next, in order to evaluate the bonding strength of this conductive metallized layer to the AlN sintered base material, the metallized layer was plated with Ni and annealed at about 800°C in a homing gas. The tip of the wire made of (Co-Fe alloy) was brazed. When the bonding strength (Kg/mm 2 ) was measured by pulling the wire in a direction perpendicular to the metallized surface, it was 2Kg/mm 2 or more. Examples 2 to 18 AlN sintered bodies having conductive metallized layers were produced in the same manner as in Example 1 except for using various types of elements belonging to the first and second groups described above,
An evaluation test was conducted, and the results are shown in the table together with the composition of the raw material paste for the metallized layer, the metallization conditions, and the constituent phases of the obtained metallized layer. As is clear from the table, the aluminum nitride sintered body obtained by the manufacturing method of the present invention has a conductive metallized layer that has high bonding strength with the AlN sintered body base material even after the soldering and brazing processes. Because of this, the reliability of joining with other parts is high and it can be used for a wide range of applications. especially,
As mentioned above, the AlN sintered body itself has an extremely high thermal conductivity (approximately 5 times that of Al 2 O 3 ), and its coefficient of thermal expansion is extremely similar to that of the Si that constitutes the semiconductor element. It has great utility as a substrate material for semiconductors.
【表】
［発明の効果］
以上の説明から明らかなように、本発明の製造
方法によつて得られる窒化アルミニウム焼結体は
窒化アルミニウム焼結体母材との高温における接
合強度が極めて高い導電性メタライズ層を有する
ため、該焼結体にはんだ付、ろう付などにより他
部材を接合することが可能であり、また、そのよ
うに他部材が接合された焼結体を高温下もしく
は、低温から高温への熱サイクル環境下で使用し
た場合にも、メタライズ層の剥離などを生じるこ
とがない。したがつて、近年の高集積、高出力電
子回路用基板、イグナイタ、高周波トランジス
タ、レーザ管、マグネトロンあるいは各種ヒータ
として用いることができ、その工業的価値は極め
て大である。[Table] [Effects of the Invention] As is clear from the above description, the aluminum nitride sintered body obtained by the manufacturing method of the present invention has extremely high bonding strength with the aluminum nitride sintered body base material at high temperatures and is conductive. Because the sintered body has a metalized layer, it is possible to join other parts to the sintered body by soldering, brazing, etc., and the sintered body with other parts joined in this way can be heated at high or low temperatures. Even when used in a thermal cycle environment from low to high temperatures, the metallized layer does not peel off. Therefore, it can be used as substrates for recent highly integrated, high-output electronic circuits, igniters, high-frequency transistors, laser tubes, magnetrons, and various heaters, and its industrial value is extremely large.
Claims (1)
りなる群（第１の群）から選ばれた１種または２
種以上の単体、ならびにＢ、Al、周期律表の第
ａ族元素および希土類元素よりなる群（第２の
群）から選ばれた元素の１種または２種以上の窒
化物および／または酸化物とを、粘着剤に分散さ
せてペーストを作成し、前記ペーストを窒化アル
ミニウム焼結体母材の表面の少なくとも一部に塗
布した後乾燥させ、非酸化性雰囲気中で加熱処理
して導電性メタライズ層を形成することを特徴と
する導電性メタライズ層を有する窒化アルミニウ
ム焼結体の製造方法。 ２ 前記窒化アルミニウム焼結体が、半導体用基
板である特許請求の範囲第１項記載の導電性メタ
ライズ層を有する窒化アルミニウム焼結体の製造
方法。[Claims] 1. One or two selected from the group consisting of molybdenum, tungsten, and tantalum (first group)
nitrides and/or oxides of one or more elements selected from the group consisting of B, Al, group a elements of the periodic table, and rare earth elements (second group); are dispersed in an adhesive to create a paste, and the paste is applied to at least a portion of the surface of the aluminum nitride sintered body base material, dried, and heat-treated in a non-oxidizing atmosphere to conductive metallization. A method for producing an aluminum nitride sintered body having a conductive metallized layer, the method comprising forming a layer. 2. The method for manufacturing an aluminum nitride sintered body having a conductive metallized layer according to claim 1, wherein the aluminum nitride sintered body is a semiconductor substrate.
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3382686A JPS62197374A (en) | 1986-02-20 | 1986-02-20 | Aluminum nitride sintered body |
| US07/016,557 US4770953A (en) | 1986-02-20 | 1987-02-19 | Aluminum nitride sintered body having conductive metallized layer |
| DE3789628T DE3789628T3 (en) | 1986-02-20 | 1987-02-19 | Sintered body made of aluminum nitride with conductive metallized layer. |
| EP87102344A EP0235682B2 (en) | 1986-02-20 | 1987-02-19 | Aluminium nitride sintered body having conductive metallized layer |
| KR1019870001437A KR900006122B1 (en) | 1986-02-20 | 1987-02-20 | Aluminum nitride sintered body and manufacture thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3382686A JPS62197374A (en) | 1986-02-20 | 1986-02-20 | Aluminum nitride sintered body |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5205585A Division JP2898851B2 (en) | 1993-07-29 | 1993-07-29 | Aluminum nitride sintered body having conductive metallized layer and method of manufacturing the same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62197374A JPS62197374A (en) | 1987-09-01 |
| JPH0369874B2 true JPH0369874B2 (en) | 1991-11-05 |
Family
ID=12397293
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3382686A Granted JPS62197374A (en) | 1986-02-20 | 1986-02-20 | Aluminum nitride sintered body |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62197374A (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0684271B2 (en) * | 1986-11-20 | 1994-10-26 | 株式会社トクヤマ | Sintered body manufacturing method |
| JPH02159797A (en) * | 1988-12-14 | 1990-06-19 | Toshiba Corp | Ceramic multilayer board |
| JPH03146488A (en) * | 1989-10-30 | 1991-06-21 | Sumitomo Electric Ind Ltd | Production of aluminum nitride sintered body with metallizing layer |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6265991A (en) * | 1985-09-13 | 1987-03-25 | 株式会社東芝 | High heat conductive ceramics substrate |
-
1986
- 1986-02-20 JP JP3382686A patent/JPS62197374A/en active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6265991A (en) * | 1985-09-13 | 1987-03-25 | 株式会社東芝 | High heat conductive ceramics substrate |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS62197374A (en) | 1987-09-01 |
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