JPH0246750A - Metallized substrate of aluminum nitride - Google Patents
Metallized substrate of aluminum nitrideInfo
- Publication number
- JPH0246750A JPH0246750A JP19724588A JP19724588A JPH0246750A JP H0246750 A JPH0246750 A JP H0246750A JP 19724588 A JP19724588 A JP 19724588A JP 19724588 A JP19724588 A JP 19724588A JP H0246750 A JPH0246750 A JP H0246750A
- Authority
- JP
- Japan
- Prior art keywords
- aluminum nitride
- substrate
- metallized
- elements
- group
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 35
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 title claims abstract description 27
- 229910052751 metal Inorganic materials 0.000 claims abstract description 23
- 239000002184 metal Substances 0.000 claims abstract description 23
- 238000000034 method Methods 0.000 abstract description 15
- 238000005476 soldering Methods 0.000 abstract description 15
- 239000004065 semiconductor Substances 0.000 abstract description 13
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 abstract description 12
- 229910052802 copper Inorganic materials 0.000 abstract description 10
- 239000010949 copper Substances 0.000 abstract description 10
- 230000017525 heat dissipation Effects 0.000 abstract description 9
- 239000012298 atmosphere Substances 0.000 abstract description 8
- 239000000463 material Substances 0.000 abstract description 7
- 239000007789 gas Substances 0.000 abstract description 6
- 238000002844 melting Methods 0.000 abstract description 6
- 230000008018 melting Effects 0.000 abstract description 6
- 230000000694 effects Effects 0.000 abstract description 5
- 229910052750 molybdenum Inorganic materials 0.000 abstract description 5
- 229910052721 tungsten Inorganic materials 0.000 abstract description 5
- 229910052715 tantalum Inorganic materials 0.000 abstract description 4
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 abstract description 3
- 150000002739 metals Chemical class 0.000 abstract description 3
- 239000011733 molybdenum Substances 0.000 abstract description 3
- 230000000737 periodic effect Effects 0.000 abstract description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 abstract description 3
- 239000010937 tungsten Substances 0.000 abstract description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 abstract description 2
- 229910001873 dinitrogen Inorganic materials 0.000 abstract description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 abstract description 2
- 238000005245 sintering Methods 0.000 abstract 1
- 150000001875 compounds Chemical class 0.000 description 9
- 239000000470 constituent Substances 0.000 description 8
- 238000007747 plating Methods 0.000 description 8
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 6
- 239000006104 solid solution Substances 0.000 description 6
- 239000000843 powder Substances 0.000 description 4
- 239000000203 mixture Substances 0.000 description 3
- 229910000679 solder Inorganic materials 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- 230000001052 transient effect Effects 0.000 description 3
- 239000001856 Ethyl cellulose Substances 0.000 description 2
- ZZSNKZQZMQGXPY-UHFFFAOYSA-N Ethyl cellulose Chemical compound CCOCC1OC(OC)C(OCC)C(OCC)C1OC1C(O)C(O)C(OC)C(CO)O1 ZZSNKZQZMQGXPY-UHFFFAOYSA-N 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 238000005219 brazing Methods 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 229920001249 ethyl cellulose Polymers 0.000 description 2
- 235000019325 ethyl cellulose Nutrition 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 150000002484 inorganic compounds Chemical class 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 239000011344 liquid material Substances 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 229910052726 zirconium Inorganic materials 0.000 description 2
- BVKZGUZCCUSVTD-UHFFFAOYSA-L Carbonate Chemical compound [O-]C([O-])=O BVKZGUZCCUSVTD-UHFFFAOYSA-L 0.000 description 1
- 239000000020 Nitrocellulose Substances 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000011889 copper foil Substances 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- JKWMSGQKBLHBQQ-UHFFFAOYSA-N diboron trioxide Chemical compound O=BOB=O JKWMSGQKBLHBQQ-UHFFFAOYSA-N 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 150000002736 metal compounds Chemical class 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229920001220 nitrocellulos Polymers 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- MWUXSHHQAYIFBG-UHFFFAOYSA-N nitrogen oxide Inorganic materials O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 231100000331 toxic Toxicity 0.000 description 1
- 230000002588 toxic effect Effects 0.000 description 1
Landscapes
- Insulated Metal Substrates For Printed Circuits (AREA)
- Cooling Or The Like Of Electrical Apparatus (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
Description
【発明の詳細な説明】
〔発明の目的〕
（産業上の利用分野）
本発明は、導電性メタライズ層を備えた窒化アルミニュ
ウム基板（焼結体）に関する。DETAILED DESCRIPTION OF THE INVENTION [Object of the Invention] (Industrial Application Field) The present invention relates to an aluminum nitride substrate (sintered body) provided with a conductive metallized layer.
（従来の技術）
窒化アルミニュウム（ＡＩ２Ｎ）焼結体は、絶縁性、耐
腐蝕性ならびに耐熱衝撃性に優れていると共に、熱伝導
率が高いために、各種の電子、電気部品用素材として利
用されている。また、最近では、放熱性が充分でないア
ルミナ（Ａｆｆ２Ｏｆｆ）や毒性のあるベリリヤ（Ｂｅ
ｄ）に代わって半導体用基板材料として使用されている
。(Prior art) Aluminum nitride (AI2N) sintered bodies have excellent insulation, corrosion resistance, and thermal shock resistance, as well as high thermal conductivity, so they are used as materials for various electronic and electrical parts. ing. In addition, recently, alumina (Aff2Off), which does not have sufficient heat dissipation properties, and beryllya (Berya), which is toxic, are being used.
It is used as a substrate material for semiconductors instead of d).
このような基板材料として利用するＡＱＮ焼結体には、
用途の別を問わず何らかの全屈部品を取付ける必要が生
じる場合が多く、・その時は表面に導電性メタライズ層
を形成する方法が採られている。AQN sintered bodies used as such substrate materials include:
Regardless of the purpose, it is often necessary to install some kind of fully bent component, and in that case, a method of forming a conductive metallized layer on the surface is adopted.
このようなＡｌ２Ｎ焼結体へのメタライズ法には、Ａρ
Ｎ焼結体表面に形成した酸化物層に銅箔を接合するダイ
レクトボンド法（ＤＢＣ法）、銅、金、銀−バラジュウ
ムなどを利用した厚膜法、さらに高融点金属法などが知
られかつ利用されている。In this metallization method for Al2N sintered bodies, Aρ
The direct bonding method (DBC method) in which copper foil is bonded to the oxide layer formed on the surface of the N sintered body, the thick film method using copper, gold, silver-baladium, etc., and the high melting point metal method are well-known. It's being used.
しかし、導電性メタライズ層は、いずれも、特に高温に
おけるＡＱＮ焼結体との密着性が悪いため、ろう付や半
田付けなど約７００℃以上で行う接合方法により他の部
品を接合することが困難である。However, all conductive metallized layers have poor adhesion to AQN sintered bodies, especially at high temperatures, making it difficult to join other parts using joining methods such as brazing or soldering that are performed at temperatures above about 700°C. It is.
仮に、接合できたとしても、他の部品を接合したＡＱＮ
焼結体を高温で使用するとメタライズ層が焼結体表面か
ら剥離して、他の部品が脱落するという問題があった。Even if it can be joined, the AQN that has been joined with other parts
When the sintered body is used at high temperatures, there is a problem in that the metallized layer peels off from the surface of the sintered body, causing other parts to fall off.
この難点を克服するために、導電性メタライズ層を主と
してＷ、Ｎｏ、Ｔａなどの高融点金属で構成する成分元
素に特徴がある窒化アルミニュウム焼結体が特願昭６１
＝３３８２６号として本願と同一出願人から出願されて
いる。In order to overcome this difficulty, a patent application was made in 1983 for an aluminum nitride sintered body whose conductive metallized layer is mainly composed of high melting point metals such as W, No, and Ta.
It has been filed as No. 33826 by the same applicant as the present application.
（発明が解決しようとする課題）
このような導電性メタライズ層を設置した窒化アルミニ
ュウム（ＡＱＮ） Ｍ結体を電子部品として利用するに
は、この導電性メタライズ層に半田付けや高温半田付け
により半導体素子を搭載していた。(Problem to be Solved by the Invention) In order to use the aluminum nitride (AQN) M structure provided with such a conductive metallized layer as an electronic component, it is necessary to attach a semiconductor to the conductive metallized layer by soldering or high-temperature soldering. It was equipped with an element.
しかし、導電性メタライズ層を被着した窒化アルミニュ
ウム（ＡＲＮ）基板では、放熱効果に限度があった。し
かも、Ｗ 、 Ｍｏ 、 Ｔａなどの高融点金属を適用
した導電性メタライズ層は電気抵抗が大きいうえに大電
流を流し難い問題がある。However, an aluminum nitride (ARN) substrate coated with a conductive metallized layer has a limited heat dissipation effect. Moreover, conductive metallized layers made of high melting point metals such as W, Mo, Ta, etc. have a problem of high electrical resistance and difficulty in passing large currents.
ところで、窒化アルミニウム基板の熱伝導率は７０〜２
００Ｖ／ｍ、Ｋ（すａｔｔ／Ｍｉ１ｆｉ Ｋｅｆｆｉｖ
ｉｎ）であり、熱膨脹係数は室温から５００℃まで４．
６Ｘ１０−’／”Ｃである。By the way, the thermal conductivity of aluminum nitride substrate is 70~2
00V/m, K(satt/Mi1fi Keffiv
in), and the coefficient of thermal expansion is 4. from room temperature to 500°C.
6X10-'/''C.
従って、基板全体として大きな放熱効果を必要とする場
合には、必ずしも充分でない。Therefore, if a large heat dissipation effect is required for the entire board, this is not necessarily sufficient.
本発明は、このような問題を解消し、特に窒化アルミニ
ウム基板全体の放熱効果をあげて、基板導電回路の抵抗
が低くて、しかも、大電流を流すことができる窒化アル
ミニウム・メタライズ基板を提供することを目的とする
。The present invention solves these problems and provides an aluminum nitride metallized substrate that particularly improves the heat dissipation effect of the entire aluminum nitride substrate, has a low resistance of the substrate conductive circuit, and can flow a large current. The purpose is to
（課題を解決するための手段）
本発明は、少なくともその表面の一部に導電性メタライ
ズ層を形成したアルミニュウム・メタライズ基板であっ
て、この導電性メタライズ層に金属製ヒートシンクを取
付け、半導体素子などの電子部品を搭載する点に特徴が
ある。(Means for Solving the Problems) The present invention is an aluminum metallized substrate in which a conductive metallized layer is formed on at least a part of its surface, a metal heat sink is attached to the conductive metallized layer, and a semiconductor element, etc. It is unique in that it is equipped with several electronic components.
（作 用）
このように本発明では、熱膨張率の異なる半導体基板と
窒化アルミニウム・メタライズ基板の中間に金属製ヒー
トシンクを設け、これが応力緩和層としての役割を果た
すと共に、この窒化アルミニウム・メタライズ基板の熱
放散性を改善した。(Function) In this way, in the present invention, a metal heat sink is provided between the semiconductor substrate and the aluminum nitride metallized substrate, which have different coefficients of thermal expansion, and this serves as a stress relaxation layer. improved heat dissipation.
この金属製ヒートシンクには銅板の外にＭＯなどの高融
点金属板が利用でき、さらに、半田付けもしくは高温半
田付けにより後述するメタライズ層に固着する半導体素
子としては、多くの製品が適用可能であるが、ＳＲ，Ｓ
ＳＲ，ＳＣＲ，Ｇ−Ｔｒなどのように熱放散が特に必要
な素子にとって好適する。In addition to the copper plate, a high melting point metal plate such as MO can be used for this metal heat sink, and many products can be used as semiconductor elements that are fixed to the metallized layer (described later) by soldering or high-temperature soldering. But, S.R., S.
It is suitable for elements that particularly require heat dissipation, such as SR, SCR, and G-Tr.
しかし、金属製ヒートシンク特に銅板の厚さが０．６ｍ
ｍ以上になると、窒化アルミニウム基板と銅板の熱膨張
率差（α）により銅板−メタライズ層。However, the thickness of the metal heat sink, especially the copper plate, is 0.6 m.
m or more, the difference in thermal expansion coefficient (α) between the aluminum nitride substrate and the copper plate causes the copper plate to become a metallized layer.
銅板−素子間に半田疲労が起こってクラックが入り易く
なるので、本発明では、銅板ではその厚さを０．６ｎｎ
以下に限定する。更にヒートシンクとしての機能を果た
すために下限として０．１ｎｎ程度の厚さが当然必要と
なる。ただし、 Ｍｏ板は、窒化アルミニウム基板と熱
膨脹係数に差が少ないので、厚さを考慮する必要はない
。Since solder fatigue occurs between the copper plate and the element and cracks are likely to occur, in the present invention, the thickness of the copper plate is reduced to 0.6 nn.
Limited to the following. Furthermore, in order to function as a heat sink, a thickness of about 0.1 nn is naturally required as a lower limit. However, since the Mo plate has a small difference in thermal expansion coefficient from that of the aluminum nitride substrate, there is no need to consider the thickness.
一方、窒化アルミニウム（ＡＱＮ焼結体）基板に形成す
るメタライズ層には、ニッケルもしくは金メツキ層を被
覆後、金属製ヒートシンクを半田付けあるいは高温半田
付けなどによりメタライズ層に接合するが、この窒化ア
ルミニウム（ＡＮＮ焼結体）メタライズ基板としては熱
伝導率に＝５０ Ｖ／ｍ、に以上のものが好適する。こ
のメタライズ層の構成相としては、以下の第１群ならび
に第２群が含有される。その第１群の構成元素は、耐熱
性に優れたモリブデン（Ｍｏ） ｔタングステン（Ｗ）
及びタンタル（Ｔａ）からなる高融点金属からなる。On the other hand, after coating the metallized layer formed on the aluminum nitride (AQN sintered body) substrate with a nickel or gold plating layer, a metal heat sink is bonded to the metallized layer by soldering or high-temperature soldering. (ANN sintered body) As a metallized substrate, one having a thermal conductivity of 50 V/m or more is suitable. The constituent phases of this metallized layer include the following first group and second group. The constituent elements of the first group are molybdenum (Mo), tungsten (W), and tungsten (W), which have excellent heat resistance.
and tantalum (Ta), which is a high melting point metal.
第２群の構成元素は、周期率表第■族元素及び第ＴＶａ
族元素よりなる群（第２群）から選ばれた少なくとも一
種であり、メタライズ層はこの第１群ならびに第２群を
構成相の成分元素として含有するのが特徴である。この
成分元素は、一種及び２種以上が組合わされて含まれて
おり、その場合、この元素は、各元素単位で、もしくは
各元素を含む化合物もしくは固溶体として、または、こ
れら単体、化合物及び固溶体から選ばれた２種以上の混
合体として構成層に存在する。The constituent elements of the second group are the elements of group Ⅰ of the periodic table and the elements of group TVa.
The metallized layer is characterized by containing the first group and the second group as component elements of the constituent phase. This component element is contained singly or in combination of two or more, and in that case, this element can be used individually, as a compound or solid solution containing each element, or as a single element, a compound, or a solid solution. It is present in the constituent layer as a mixture of two or more selected types.
この化合物としては、これらの元素の酸化物、窒化物、
炭化物、酸窒化物、炭窒化物、炭酸化物、炭酸窒化物、
ホウ化物、ケイ化物などがあげられる。また、この化合
物は、上記元素の他に、後述する第２群に属する元素を
少なくとも一種及び／または第２の群に属する元素以外
の元素を含む複金化合物であっても良いし、固溶体でも
これと同様である。These compounds include oxides, nitrides, and
Carbide, oxynitride, carbonitride, carbonate, carbonitride,
Examples include borides and silicides. Further, this compound may be a double metal compound containing, in addition to the above elements, at least one element belonging to the second group described below and/or an element other than the elements belonging to the second group, or may be a solid solution. This is similar.
成分元素として例えばＭｏは、導電性メタライズ層の構
成相では、例えば、Ｍｏ、Ｍｏ−ＡＱ固溶体などのよう
なかたちで存在する。For example, Mo as a component element exists in the form of Mo, Mo-AQ solid solution, etc. in the constituent phase of the conductive metallized layer.
次に、導電性メタライズ層の第２群に属する成分元素、
即ち、周期率表の第■族元索としてはＢ。Next, component elements belonging to the second group of the conductive metallized layer,
In other words, it is B as a member of Group Ⅰ of the periodic table.
１、Ｓｃ、Ｇａ、Ｉｎ、Ｔｉが、第１Ｖａ族元素はＴｉ
、Ｚｒ、Ｈｆが適用でき、これらの各元素または化合物
は、メタライズ層形成工程において、 ＡｆｆＮとのぬ
れ性が優れているので、導電性メタライズ層とＡｆｆｉ
Ｎ焼結体との密着性の向上に大いに与かっている。この
第２群に属する元素の内特に好ましいのは、 ＡＱ、Ｔ
ｉ、Ｚｒ。1, Sc, Ga, In, Ti, the first Va group element is Ti
, Zr, and Hf can be applied, and each of these elements or compounds has excellent wettability with AfN in the metallized layer forming process, so that the conductive metallized layer and Affi
This greatly contributes to improving the adhesion with the N sintered body. Among the elements belonging to this second group, particularly preferred are AQ, T
i, Zr.
Ｈｆである。It is Hf.
これらの成分元素は、上記第１群に属する成分元素と同
じように、一種または２種以上が組合わされており、そ
の存在状態も前と同様に、各元素単位、化合物もしくは
固溶体として、または、これら単体、化合物及び固溶体
から選ばれた２種以上の混合体として存在する。These component elements, like the component elements belonging to the first group mentioned above, are present singly or in combination of two or more, and their state of existence is the same as before, either as each elemental unit, as a compound or solid solution, or as It exists as a mixture of two or more selected from these single substances, compounds, and solid solutions.
成分元素としてのＴｉは、導電性メタライズ層の構成相
において、例えば、ＴｉＮ、ＴｉＯ２などのようなかた
ちで存在する。Ti as a constituent element exists in the form of TiN, TiO2, etc. in the constituent phases of the conductive metallized layer.
上記第１群に属する元素と第２群に属する元素の構成比
は特に限定されるものでなく、使用する元素の種類ある
いは組合わせにより適宜設定すればよく、例えば第１群
に属する元素の合計と第２群のに属する元素との比が、
原子比で約９０ ： １０〜１０ ： ９０に設定され
ることが好ましい。The composition ratio of the elements belonging to the first group and the elements belonging to the second group is not particularly limited, and may be set as appropriate depending on the type or combination of elements used, for example, the total of the elements belonging to the first group. The ratio between and the elements belonging to the second group is
The atomic ratio is preferably set to about 90:10 to 10:90.
本発明の窒化アルミニウム・メタライズ基板は、例えば
、以下のようにして製造される。即ち、常法により得ら
れたＡＱＮ焼結体母材の所定の面に、上記第１群及び第
２群から選ばれた元素を含むペーストまたは液状物を塗
布する。このペーストまたは液状物は、上記元素の単体
もしくは化合物粉末をエチルセルローズ、ニトロセルロ
ーズなどの結着剤に分散して形成する。原料粉末として
は、上記各元素の単体粉末や、各元素を含む導電性無機
化合物、即ち、酸化物、窒化物、あるいは焼成して導電
性を示す無機化合物もしくは有機化合物（ゾル−ゲル）
などを使用することができる。The aluminum nitride metallized substrate of the present invention is manufactured, for example, as follows. That is, a paste or liquid containing an element selected from the first group and the second group is applied to a predetermined surface of an AQN sintered base material obtained by a conventional method. This paste or liquid material is formed by dispersing the above element or compound powder in a binder such as ethylcellulose or nitrocellulose. Raw material powders include single powders of each of the above elements, conductive inorganic compounds containing each element, such as oxides, nitrides, or inorganic or organic compounds that exhibit conductivity when fired (sol-gel).
etc. can be used.
また、このペーストや液状物中には、上記第１群及び第
２群から選ばれた元素もしくはこの元素を含む化合物が
全体の５重量％以上含有されていることが好ましい。Further, it is preferable that the paste or liquid contains an element selected from the first group and the second group or a compound containing this element in an amount of 5% by weight or more of the total amount.
このようにＡＱＮ焼結体母材表面にペーストまたは液状
物を塗布してから、通常は、１１００〜１８００℃程度
に維持した窒素ガス、ドライホーミングガス、ウェット
ホーミングガス雰囲気で約０．５〜２時間処理して、厚
さ１０〜２０μｓの導電性メタライズ層を形成する。After applying the paste or liquid material to the surface of the AQN sintered body base material in this way, it is usually applied in a nitrogen gas, dry homing gas, or wet homing gas atmosphere maintained at about 1100 to 1800°C to approx. A conductive metallized layer with a thickness of 10 to 20 μs is formed by processing for a period of time.
この導電性メタライズ層には、Ｎｉなとのメツキを施し
、さらに、ホーミングガス雰囲気で約６００〜８５０℃
でこのメツキ層をアニールする。This conductive metallized layer is plated with Ni and further heated to approximately 600 to 850°C in a homing gas atmosphere.
Anneal this plating layer.
次に半導体素子の寸法のほぼ倍程度の大きさで厚さが０
．３ｍｍ程度に形成され、金属製ヒートシンクとして機
能するタフピッチ銅を導電性メタライズ層を被覆したメ
ツキ層に重ねてから、高温半田付は法または、半田付は
法で還元性雰囲気中で処理して一体として窒化アルミニ
ウム・メタライズ基板を完成する。Next, the size is approximately twice the size of the semiconductor element and the thickness is 0.
．． Tough pitch copper, which is formed to a thickness of approximately 3 mm and functions as a metal heat sink, is layered on a plating layer coated with a conductive metallized layer, and then soldered at high temperature using a method or soldering method in a reducing atmosphere and integrated. As a result, an aluminum nitride metallized substrate was completed.
（実施例）
モリブデン（Ｍｏ）粉末、窒化チタン（ＴｉＮ）粉末及
びエチルセルローズとを重量比で８：２：１で混合して
原料ペーストを調整し、これをＡＱＮ焼結体母材の所定
の表面に塗布後、乾燥する。さらに、約１６００℃に維
持した窒素雰囲気中でのほぼ１時間の加熱工程により厚
さ１０〜２０μｓの導電性メタライズ層を形成する。(Example) A raw material paste was prepared by mixing molybdenum (Mo) powder, titanium nitride (TiN) powder, and ethyl cellulose at a weight ratio of 8:2:1, and this was mixed into a predetermined amount of AQN sintered body base material. After applying it to the surface, let it dry. Furthermore, a conductive metallized layer having a thickness of 10 to 20 μs is formed by a heating process for about 1 hour in a nitrogen atmosphere maintained at about 1600° C.
次に、この導電性メタライズ層にはＮｉメツキ層を被覆
後、通常のアニール工程を施し、さらに、厚さ０．３ｎ
ｍでアセンブリする半導体素子の寸法の倍程度、即ち縦
５＋ｎｏ＋横５ｍｍの半導体素子では縦１０Ｉ、横１０
ｎｎのタフピッチ銅をメタライズ層に被覆したメツキ層
に重ねて配置後、高温半田付は法、半田付は法により一
体に固着する。この高温半田付は法では約４００℃、
半田付は法では２５０℃程度の還元性雰囲気を適用する
。Next, this conductive metallized layer is coated with a Ni plating layer, subjected to a normal annealing process, and further coated with a Ni plating layer to a thickness of 0.3 nm.
About twice the dimensions of the semiconductor element to be assembled in m, that is, for a semiconductor element of length 5 + no + width 5 mm, the length is 10 I and the width is 10 mm.
After placing nn tough pitch copper on the plating layer covering the metallized layer, they are fixed together by high-temperature soldering and soldering. This high temperature soldering is approximately 400℃ by law.
The soldering method uses a reducing atmosphere at about 250°C.
このほかに、８００℃位の不活性雰囲気中における銀ろ
う付げによりＮｏ製ヒートシンクを上記のように導電性
メタライズ層に形成したＮｉメツキ層に重ねて固着する
。In addition, the No heat sink is overlaid and fixed on the Ni plating layer formed on the conductive metallized layer as described above by silver brazing in an inert atmosphere at about 800°C.
このタフピッチ銅は上記のように金属製ヒートシンクと
して機能するもので、ここに整流素子やジャイアンツＴ
ｒなどのように放熱をより必要とする半導体素子を半田
付けもしくは高温半田付は工程で固着する。この条件は
金属製ヒートシンクを固着する場合と同様であり、この
工程を終えた窒化アルミニウム・メタライズ基板の断面
図を第１図に示した。As mentioned above, this tough pitch copper functions as a metal heat sink, and here the rectifier and Giant T
Semiconductor elements that require more heat dissipation, such as R, are fixed during the soldering process or high-temperature soldering. This condition is the same as that for fixing a metal heat sink, and a cross-sectional view of the aluminum nitride metallized substrate after this process is shown in FIG.
図で、窒化、メタライズ基板は１．メタライズ層及びメ
ツキ層は判然と区分けができないのでまとめて２と表示
し、金属製ヒートシンク３．半田層は４．半導体素子は
５である。In the figure, the nitrided and metalized substrate is 1. Since the metallized layer and the plating layer cannot be clearly distinguished, they are collectively indicated as 2, and the metal heat sink 3. The solder layer is 4. The number of semiconductor elements is 5.
このように金属製ヒートシンク３を固着した窒化、メタ
ライズ基板１では、半導体素子５の稼働により発生する
熱が金属製ヒートシンク３により発散されるが、この様
子は第２図に示した過渡熱抵抗試験結果から明らかであ
る。In the nitrided and metallized substrate 1 to which the metal heat sink 3 is fixed in this way, the heat generated by the operation of the semiconductor element 5 is dissipated by the metal heat sink 3, and this situation can be seen in the transient thermal resistance test shown in FIG. It is clear from the results.
この図は、横軸に電力印加時間ｍｓを、縦軸に過渡熱抵
抗Ｒｔｈ（ｊ−ｃ）’℃／Ｖを採り、比較例には金属性
ヒートシンクを設置しない窒化、メタライズ基板即ち従
来の窒化、メタライズ基板の試験結果を一緒に表示した
。In this figure, the horizontal axis represents the power application time ms, and the vertical axis represents the transient thermal resistance Rth(j-c)'℃/V. Comparative examples include nitrided substrates without a metal heat sink, and conventional nitrided substrates that do not have a metal heat sink. , the test results of the metallized substrate were also displayed.
図から明らかなように、本発明に係わる窒化アルミニウ
ム・メタライズ基板１は、比較例より過渡熱抵抗Ｒｔｈ
（ｊ−ｃ）’℃／Ｖが約１／４低く、その有効性は明瞭
であり、それに加えて、体積固有抵抗（室温から５００
℃間）も１７１０程度と小さくなった。As is clear from the figure, the aluminum nitride metallized substrate 1 according to the present invention has a transient thermal resistance Rth higher than that of the comparative example.
(j-c)'℃/V is about 1/4 lower, its effectiveness is clear, and in addition, the volume resistivity (from room temperature to 500
℃) was also reduced to about 1710.
以上説明したように、この発明では、放熱性ならびに電
気的特性に優れた窒化アルミニウム・メタライズ基板を
得ることができる。As explained above, according to the present invention, an aluminum nitride metallized substrate with excellent heat dissipation and electrical properties can be obtained.
第１図は本発明に係わる窒化アルミニウム・メタライズ
基板の断面図、第２図は、この窒化アルミニュウム・メ
タライズ基板の特性を示す曲線図である。
１：窒化アルミニュウム・メタライズ基板２：メタライ
ズ層
３：金属製ヒートシンク
４：半田層 ５：半導体素子代理人 弁理士
大 胡 典 夫
第 １ 図
第 ２ 図FIG. 1 is a sectional view of an aluminum nitride metallized substrate according to the present invention, and FIG. 2 is a curve diagram showing the characteristics of this aluminum nitride metallized substrate. 1: Aluminum nitride metallized substrate 2: Metallized layer 3: Metal heat sink 4: Solder layer 5: Semiconductor device agent Patent attorney Norio Ogo Figure 1 Figure 2
Claims (1)
した窒化アルミニウム・メタライズ基板であって，この
導電性メタライズ層に金属製ヒートシンクを取付けるこ
とを特徴とする窒化アルミニウム・メタライズ基板An aluminum nitride metallized substrate having a conductive metallized layer formed on at least a portion of its surface, the aluminum nitride metallized substrate having a metal heat sink attached to the conductive metallized layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19724588A JPH0246750A (en) | 1988-08-09 | 1988-08-09 | Metallized substrate of aluminum nitride |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19724588A JPH0246750A (en) | 1988-08-09 | 1988-08-09 | Metallized substrate of aluminum nitride |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0246750A true JPH0246750A (en) | 1990-02-16 |
Family
ID=16371265
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP19724588A Pending JPH0246750A (en) | 1988-08-09 | 1988-08-09 | Metallized substrate of aluminum nitride |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0246750A (en) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60177634A (en) * | 1984-02-24 | 1985-09-11 | Toshiba Corp | Manufacture of power semiconductor modular substrate |
-
1988
- 1988-08-09 JP JP19724588A patent/JPH0246750A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60177634A (en) * | 1984-02-24 | 1985-09-11 | Toshiba Corp | Manufacture of power semiconductor modular substrate |
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