JPH0369229U - - Google Patents
Info
- Publication number
- JPH0369229U JPH0369229U JP13158689U JP13158689U JPH0369229U JP H0369229 U JPH0369229 U JP H0369229U JP 13158689 U JP13158689 U JP 13158689U JP 13158689 U JP13158689 U JP 13158689U JP H0369229 U JPH0369229 U JP H0369229U
- Authority
- JP
- Japan
- Prior art keywords
- fluid
- temperature
- flow section
- fluid flow
- processing apparatus
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000012530 fluid Substances 0.000 claims 10
- 238000000034 method Methods 0.000 claims 1
- 238000001816 cooling Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
Landscapes
- Drying Of Semiconductors (AREA)
Description
図面は本考案装置の模式図である。
１……反応室、２……温度制御装置、１１……
ガス導入筺、１２……下部電極、１４……ジヤケ
ツト、１５……試料台、１７……高周波電源、２
１……タンク、２１ａ……ヒータ、２２……送流
ポンプ、２３……バルブ、２４……冷却ユニツト
、２５……バルブ、２６……タンク、２７……送
流ポンプ、２８……バルブ、２９……バルブ、３
１，３２……共通管。
The drawing is a schematic diagram of the device of the present invention. 1...Reaction chamber, 2...Temperature control device, 11...
Gas introduction housing, 12...lower electrode, 14...jacket, 15...sample stand, 17...high frequency power supply, 2
1... Tank, 21a... Heater, 22... Feed pump, 23... Valve, 24... Cooling unit, 25... Valve, 26... Tank, 27... Feed pump, 28... Valve, 29...Valve, 3
1, 32... common pipe.
Claims (1)
に保持させた試料に、真空下でプラズマを用いて
処理を施すようにしたプラズマプロセス装置にお
いて、 前記試料台に設けた流体通流部に低温流体を通
流させる低温流体循環系と、前記低温流体よりも
温度の高い高温流体を通流させる高温流体循環系
と、両循環系を前記流体通流部に対し選択的に接
続する手段とを具備することを特徴とするプラズ
マプロセス装置。[Scope of Claim for Utility Model Registration] In a plasma processing apparatus that processes a sample held on a sample stage equipped with a fluid flow section for temperature adjustment using plasma under vacuum, the sample stage comprises: A low-temperature fluid circulation system that causes low-temperature fluid to flow through a fluid flow section provided in the fluid flow section, and a high-temperature fluid circulation system that causes high temperature fluid that is higher in temperature than the low temperature fluid to flow through the fluid flow section, and both circulation systems are provided in the fluid flow flow section. 1. A plasma processing apparatus characterized by comprising means for selectively connecting to a plasma processing apparatus.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13158689U JPH0369229U (en) | 1989-11-10 | 1989-11-10 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13158689U JPH0369229U (en) | 1989-11-10 | 1989-11-10 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0369229U true JPH0369229U (en) | 1991-07-09 |
Family
ID=31679084
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13158689U Pending JPH0369229U (en) | 1989-11-10 | 1989-11-10 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0369229U (en) |
-
1989
- 1989-11-10 JP JP13158689U patent/JPH0369229U/ja active Pending
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