JPH0368537B2 - - Google Patents

Info

Publication number
JPH0368537B2
JPH0368537B2 JP55009061A JP906180A JPH0368537B2 JP H0368537 B2 JPH0368537 B2 JP H0368537B2 JP 55009061 A JP55009061 A JP 55009061A JP 906180 A JP906180 A JP 906180A JP H0368537 B2 JPH0368537 B2 JP H0368537B2
Authority
JP
Japan
Prior art keywords
region
resistance
conductivity type
transistor
impurity concentration
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP55009061A
Other languages
English (en)
Japanese (ja)
Other versions
JPS56105661A (en
Inventor
Yoichi Matsumoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP906180A priority Critical patent/JPS56105661A/ja
Publication of JPS56105661A publication Critical patent/JPS56105661A/ja
Publication of JPH0368537B2 publication Critical patent/JPH0368537B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]

Landscapes

  • Bipolar Transistors (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Bipolar Integrated Circuits (AREA)
JP906180A 1980-01-29 1980-01-29 Semiconductor integrated circuit device Granted JPS56105661A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP906180A JPS56105661A (en) 1980-01-29 1980-01-29 Semiconductor integrated circuit device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP906180A JPS56105661A (en) 1980-01-29 1980-01-29 Semiconductor integrated circuit device

Publications (2)

Publication Number Publication Date
JPS56105661A JPS56105661A (en) 1981-08-22
JPH0368537B2 true JPH0368537B2 (en:Method) 1991-10-28

Family

ID=11710093

Family Applications (1)

Application Number Title Priority Date Filing Date
JP906180A Granted JPS56105661A (en) 1980-01-29 1980-01-29 Semiconductor integrated circuit device

Country Status (1)

Country Link
JP (1) JPS56105661A (en:Method)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6086857A (ja) * 1983-10-19 1985-05-16 Matsushita Electronics Corp 半導体集積回路

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5013076A (en:Method) * 1973-06-04 1975-02-10
US4106048A (en) * 1977-04-27 1978-08-08 Rca Corp. Integrated circuit protection device comprising diode having large contact area in shunt with protected bipolar transistor
JPS5496382A (en) * 1978-01-17 1979-07-30 Toshiba Corp Semiconductor integrated circuit device

Also Published As

Publication number Publication date
JPS56105661A (en) 1981-08-22

Similar Documents

Publication Publication Date Title
US5652689A (en) ESD protection circuit located under protected bonding pad
US6236087B1 (en) SCR cell for electrical overstress protection of electronic circuits
CN101506974B (zh) 利用沟槽隔离形成的无闭锁垂直瞬态电压抑制二极管阵列结构
US7495265B2 (en) ESD protection circuit with SCR structure for semiconductor device
JP4959140B2 (ja) 半導体装置
JP2009060117A (ja) 半導体回路構造のｅｓｄ保護の効果を改良するための方法および回路構造
EP0703621B1 (en) Electrostatic discharge protection device for MOS integrated circuits
JPH11251574A (ja) 静電気保護回路
EP0385450B1 (en) Semiconductor device with MIS capacitor
JPH1065020A (ja) 半導体装置
JPH1084098A (ja) 三重井戸技術を用いた高密度ｄｒａｍのｅｓｄ保護
JP3275850B2 (ja) 高耐圧ダイオードとその製造方法
JP6838504B2 (ja) 半導体装置および半導体回路装置
US6320229B1 (en) Semiconductor device
JPH0368537B2 (en:Method)
JP3314760B2 (ja) 静電保護素子、静電保護回路及び半導体装置
JP2611639B2 (ja) 半導体装置
JP4136372B2 (ja) 半導体装置
JPS63301555A (ja) 半導体装置
JP2001036006A (ja) 半導体集積回路の入出力保護装置
JPS6359262B2 (en:Method)
JP2001358302A (ja) 半導体装置
JP2546179B2 (ja) 半導体装置
JPH0441499B2 (en:Method)
JPH02283070A (ja) 入力保護回路を備えた半導体集積回路装置