JPH0367273B2 - - Google Patents
Info
- Publication number
- JPH0367273B2 JPH0367273B2 JP56200009A JP20000981A JPH0367273B2 JP H0367273 B2 JPH0367273 B2 JP H0367273B2 JP 56200009 A JP56200009 A JP 56200009A JP 20000981 A JP20000981 A JP 20000981A JP H0367273 B2 JPH0367273 B2 JP H0367273B2
- Authority
- JP
- Japan
- Prior art keywords
- transparent
- thin film
- metal thin
- segment
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000002184 metal Substances 0.000 claims description 16
- 229910052751 metal Inorganic materials 0.000 claims description 16
- 239000010409 thin film Substances 0.000 claims description 14
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 10
- 239000010931 gold Substances 0.000 claims description 10
- 229910052737 gold Inorganic materials 0.000 claims description 10
- 238000004519 manufacturing process Methods 0.000 claims description 9
- 238000000034 method Methods 0.000 claims description 8
- 238000007747 plating Methods 0.000 claims description 6
- 239000000758 substrate Substances 0.000 claims description 6
- 230000003647 oxidation Effects 0.000 claims description 5
- 238000007254 oxidation reaction Methods 0.000 claims description 5
- 230000001590 oxidative effect Effects 0.000 claims description 2
- 238000010894 electron beam technology Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 4
- 238000012217 deletion Methods 0.000 description 3
- 230000037430 deletion Effects 0.000 description 3
- 229910052738 indium Inorganic materials 0.000 description 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 3
- 238000005476 soldering Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000012805 post-processing Methods 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
Landscapes
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Liquid Crystal (AREA)
Description
【発明の詳細な説明】
この発明は、液晶表示器などの電気光学的表示
素子で使用する絶縁基板上の透明パターン電極の
製法に関し、特に、透明パターン電極より引き出
されたリード部分を金属で形成し、ICチツプな
どの回路素子との接続を容易ならしめた透明パタ
ーン電極の製法に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method for manufacturing a transparent pattern electrode on an insulating substrate used in an electro-optical display element such as a liquid crystal display. The present invention also relates to a method for manufacturing transparent pattern electrodes that facilitate connection with circuit elements such as IC chips.
従来より、透明パターン電極の材料として酸化
錫や酸化インジウムが広く用いられているが、こ
のような材料の透明電極にボンデイング・ワイヤ
を直接接続することができないので、コネクタを
介在させて電気的な接続を行なつていた。 Traditionally, tin oxide and indium oxide have been widely used as materials for transparent pattern electrodes, but since it is not possible to directly connect bonding wires to transparent electrodes made of such materials, electrical connections are made using connectors. I was making a connection.
しかし、最近、透明電極のパターンが複雑化、
かつ、高密度化する傾向があり、パターン電極に
対して回路素子を直接接続することが望まれてい
た。 However, recently, transparent electrode patterns have become more complex.
In addition, there is a trend toward higher density, and it has been desired to directly connect circuit elements to patterned electrodes.
そこで、この発明は、このような課題を解決す
るために考えられたものであつて、透明パターン
電極より引き出されたリード部分を金属で形成し
て、ボンデイングや半田付けを可能ならしめた透
明パターン電極の製法を提供するものである。 Therefore, the present invention was devised in order to solve such problems, and it is a transparent pattern in which the lead portion drawn out from the transparent pattern electrode is formed of metal to enable bonding and soldering. The present invention provides a method for manufacturing an electrode.
次に、この発明の透明パターン電極の製法を工
程順に説明すると、第1図に示すように、
(A) ガラス基板1を用意し、
(B) このガラス基板1の上に、錫、インジウムの
ような酸化後に透明で導電性をもつ金属薄膜2
を、蒸着などの手段によつて付着せしめ、
(C) この金属薄膜2に対して、ネガ・パターン状
にレーザー光線または電子ビームを照射して不
要な部分を削除し、文字または図形の一部をな
すセグメントおよびリード部分をポジ・パター
ン状に金属薄膜2を残存させ、
(D) この残存した金属薄膜2のうち、酸化させて
透明電極にする部分へレジスト材4を被覆させ
たのち、
(E) 被覆されなかたつた金属薄膜2に金メツキ5
を施し、
(F) レジスト材4を除去したのち、
(G) 酸素中のような酸化雰囲気中で高温度に加熱
して、金属薄膜2を酸化させて透明電極6を形
成するのであるが、このとき、金メツキ5を施
した部分は酸化することがなく、金メツキされ
た金属のままである。 Next, to explain the manufacturing method of the transparent pattern electrode of the present invention in the order of steps, as shown in FIG. Metal thin film that is transparent and conductive after oxidation 2
(C) This metal thin film 2 is irradiated with a laser beam or an electron beam in a negative pattern to remove unnecessary parts and remove part of the characters or figures. (D) The remaining metal thin film 2 is coated with a resist material 4 on the part that will be oxidized to become a transparent electrode. (E ) Gold plating 5 on the uncoated metal thin film 2
(F) After removing the resist material 4, (G) heating to a high temperature in an oxidizing atmosphere such as oxygen to oxidize the metal thin film 2 and form the transparent electrode 6. At this time, the part to which the gold plating 5 has been applied is not oxidized and remains the gold-plated metal.
酸化後に透明で導電性をもつ金属薄膜2を削除
するために照射するレーザー光線3の波長には、
金属薄膜2で吸収され易い波長を選択すればよく
また、レーザー光線3をネガ・パターン状に照射
する装置としては、電子計算機の出力装置として
知られているレーザー・プリンタと同様な原理で
動作する装置でよく、第2図に示すように、等速
移動する基板1の金属薄膜2の上に、レーザー光
源10からのレーザー光線3を回転ミラー11に
よつて掃引させながら、パターン信号発生器12
からのパターン信号によつてレーザー光線3を変
調することにより実施できる。 The wavelength of the laser beam 3 irradiated to remove the transparent and conductive metal thin film 2 after oxidation includes:
It is sufficient to select a wavelength that is easily absorbed by the metal thin film 2. Also, as a device for irradiating the laser beam 3 in a negative pattern, a device that operates on the same principle as a laser printer, which is known as an output device for electronic computers, can be used. As shown in FIG. 2, while the laser beam 3 from the laser light source 10 is swept by the rotating mirror 11 onto the metal thin film 2 of the substrate 1 moving at a constant speed, the pattern signal generator 12
This can be carried out by modulating the laser beam 3 with a pattern signal from the .
また、電子ビームによつて削除加工を行なう場
合には、陰極線管における電子ビームの偏向およ
び変調と同様な原理により容易に実施することが
できる。 Further, when performing the deletion process using an electron beam, it can be easily carried out using the same principle as the deflection and modulation of the electron beam in a cathode ray tube.
レーザー光線は、集光することにより高いエネ
ルギー密度が得られ、また、電子ビームは、集束
し加速することにより高いエネルギー密度が得ら
れるから、パターン電極の削除加工をレーザー光
線または電子ビームによつて行なえば、パターン
電極の形状や削除幅の制御が容易になり、高精度
のパターン電極を短時間に、しかも、少ないエネ
ルギーによつて作ることができる。 Laser beams can obtain high energy density by focusing, and electron beams can obtain high energy density by focusing and accelerating, so if the pattern electrode removal process is performed using laser beams or electron beams. The shape and deletion width of the patterned electrode can be easily controlled, and highly accurate patterned electrodes can be produced in a short time and with less energy.
酸化後に透明で導電性をもつ金属薄膜2として
錫を用いると金メツキが容易であるが、インジウ
ムを用いると、インジウムに直接金メツキするこ
とが困難であるから、まず、インジウムに銅メツ
キを施し、しかるのちに金メツキを施せばよいの
である。 Gold plating is easy when tin is used as the transparent and conductive metal thin film 2 after oxidation, but when indium is used, it is difficult to directly gold plate the indium, so first copper plating is applied to the indium. , and then gilding it.
以上で説明した実施例においては、レーザー光
線3によつて、金属薄膜2をネガ・パターン状に
削除する工程を経たのちに金メツキを行なつてい
るが金メツキすべき部分にまず金メツキを施し、
しかるのちにレーザー光線によるネガ・パターン
状の削除を行なうこともできる。 In the embodiment described above, gold plating is performed after the process of removing the metal thin film 2 in a negative pattern using the laser beam 3, but the parts to be gold plated are first plated with gold. ,
Negative pattern deletion can then be carried out using a laser beam.
この発明の透明パターン電極の製法によると、
リード部分に金メツキされた状態の電極を、後工
程を必要とすることなく容易に得ることができる
ので、ボンデイングや半田付けが可能になり、た
とえば、第3図に示すように、基板1上にICチ
ツプ8を接着し、ボンデイング・ワイヤ9により
ICチツプ8と透明パターン電極6とを直接接続
することができるように、透明パターン電極を有
する基板1をプリント配線基板のように活用する
ことができる。 According to the method for manufacturing a transparent pattern electrode of this invention,
Since the electrode with the lead part plated with gold can be easily obtained without the need for post-processing, bonding and soldering are possible. For example, as shown in FIG. Glue the IC chip 8 to the
The substrate 1 having the transparent pattern electrode can be used like a printed wiring board so that the IC chip 8 and the transparent pattern electrode 6 can be directly connected.
第1図は、この発明の透明パターン電極の製法
の一例を工程順に示した断面図、第2図は、この
発明の製法で用いるレーザー光線照射装置の一例
を示す概略図、第3図は、この発明の製法で作つ
た透明パターン電極の使用状態の一例を示す断面
図である。
1……透明基板(ガラス基板)、2……酸化後
に透明で導電性をもつ金属薄膜、5……メツキさ
れた金。
FIG. 1 is a cross-sectional view showing an example of the manufacturing method of a transparent pattern electrode of the present invention in the order of steps, FIG. 2 is a schematic diagram showing an example of a laser beam irradiation device used in the manufacturing method of the present invention, and FIG. FIG. 2 is a cross-sectional view showing an example of a usage state of a transparent pattern electrode made by the manufacturing method of the invention. 1...Transparent substrate (glass substrate), 2...Metal thin film that is transparent and conductive after oxidation, 5...Plated gold.
Claims (1)
金属薄膜を形成する第1の工程と、上記金属薄膜
の不要部分を削除して文字または図形の一部をな
すセグメントおよび上記セグメントに接続された
リード部分をパターン状に形成する第2の工程
と、上記リード部分のうち上記セグメントから遠
い部分に金メツキを施す第3の工程と、上記金メ
ツキを施した部分を含む上記金属薄膜を高温度の
酸化雰囲気にさらす第4の工程とよりなることを
特徴とする透明パターン電極の製法。1. A first step of forming a transparent and conductive metal thin film after oxidation on a transparent substrate, and removing an unnecessary part of the metal thin film to form a segment that forms part of a character or figure and a segment that is connected to the segment. a second step of forming the lead portion into a pattern; a third step of applying gold plating to a portion of the lead portion that is far from the segment; and a third step of forming the metal thin film including the gold-plated portion. A method for manufacturing a transparent pattern electrode, comprising a fourth step of exposing it to an oxidizing atmosphere at a high temperature.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP20000981A JPS58102286A (en) | 1981-12-14 | 1981-12-14 | Transparent pattern electrode |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP20000981A JPS58102286A (en) | 1981-12-14 | 1981-12-14 | Transparent pattern electrode |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS58102286A JPS58102286A (en) | 1983-06-17 |
JPH0367273B2 true JPH0367273B2 (en) | 1991-10-22 |
Family
ID=16417269
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP20000981A Granted JPS58102286A (en) | 1981-12-14 | 1981-12-14 | Transparent pattern electrode |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS58102286A (en) |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS54159197A (en) * | 1978-06-07 | 1979-12-15 | Hitachi Ltd | Liquid crystal display element |
JPS55103584A (en) * | 1979-02-01 | 1980-08-07 | Epson Corp | Indication body |
-
1981
- 1981-12-14 JP JP20000981A patent/JPS58102286A/en active Granted
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS54159197A (en) * | 1978-06-07 | 1979-12-15 | Hitachi Ltd | Liquid crystal display element |
JPS55103584A (en) * | 1979-02-01 | 1980-08-07 | Epson Corp | Indication body |
Also Published As
Publication number | Publication date |
---|---|
JPS58102286A (en) | 1983-06-17 |
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