JPS58126613A - Method of machining thin film electrode - Google Patents
Method of machining thin film electrodeInfo
- Publication number
- JPS58126613A JPS58126613A JP923182A JP923182A JPS58126613A JP S58126613 A JPS58126613 A JP S58126613A JP 923182 A JP923182 A JP 923182A JP 923182 A JP923182 A JP 923182A JP S58126613 A JPS58126613 A JP S58126613A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- film electrode
- electrode
- processing
- present
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Non-Insulated Conductors (AREA)
- Manufacturing Of Electric Cables (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
本発明はレーザ光を用いて薄膜電極を任意の形状に分割
する方法に係るものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method of dividing a thin film electrode into arbitrary shapes using laser light.
従来、薄膜電極を任意の形状に分割する方法としては主
にケミカルエツチング法が採られていた。Conventionally, chemical etching has been mainly used as a method for dividing thin film electrodes into arbitrary shapes.
しかるにこの場合は予め分割すべき形状に合わせた原図
を作成し、写真法又は印刷法を用いて薄膜電極の表面に
前記原図よりえられた形状をもつエツチングレジスト族
を形成させ、該レジスト躾による保護を受けていない部
分の薄膜電極を薬液を用いてエツチングし、さらに前記
レジスト躾を除去したのちに洗滌・乾燥するという複雑
な工程を経てはじめて前記薄膜電極を任意の形状に分割
できるものであった。However, in this case, an original pattern corresponding to the shape to be divided is prepared in advance, and an etching resist group having a shape obtained from the original pattern is formed on the surface of the thin film electrode using a photographic method or a printing method. The thin film electrode can be divided into arbitrary shapes only after the complicated process of etching the unprotected part of the thin film electrode using a chemical solution, and then washing and drying after removing the resist layer. Ta.
本発明の目的は上述の如き複雑な工程を改善し、簡単な
装置でしかも生塵性良く薄膜電極を任意の形状に分割す
る方法を提供することにある。An object of the present invention is to improve the above-mentioned complicated process and provide a method for dividing thin film electrodes into arbitrary shapes using a simple device and with good dust generation.
本発明によれば分割されるべき薄膜電極の形状は予めコ
ンピュータにプログラムしておき、該コンピュータによ
り、レーザ光の照射位置の前記薄膜電極の面上における
相対位置を制御操作させるだけで、前記薄膜電極を線状
に溶−・蒸発させ、所定の形状に分割することができる
。レーザ光の照射位置の薄膜電極の面上における相対位
置を制御操作するためには、レーザ発生装置の内部に偏
向系を設けこれをコンピュータ制御することによっても
できるし、あるいは又、薄膜電極の形成された物体を載
荷する台の移−をコンピュータ制御することによっても
できる。According to the present invention, the shape of the thin film electrode to be divided is programmed in advance in a computer, and the computer simply controls the relative position of the laser beam irradiation position on the surface of the thin film electrode. The electrode can be melted and evaporated in a linear manner and divided into predetermined shapes. In order to control the relative position of the laser beam irradiation position on the surface of the thin film electrode, this can be done by providing a deflection system inside the laser generator and controlling this with a computer, or alternatively, by forming the thin film electrode. This can also be done by computer-controlling the movement of the table on which the object is loaded.
本発明の利点は、ケミカルエツチングのしにくい５ｎ０
２ 躾、又は貴金属の躾を少くとも一部として含む薄
膜電極の加工に用いるとき、大いに発揮される。すなわ
ちこれらの薄膜電極をケミカルエツチングするときは、
上述の如く工程が複雑であることに加えて、薬液による
エツチングの際の操作条件の管理が容易でなく、又、エ
ツチングに長ｒｔｒｍｔｒ＊するのであるが、本発明に
よるときは、レーザ光源の種類と出力とを選定すること
により極めて容易に加工することができるのである。The advantage of the present invention is that 5n0 is difficult to chemically etch.
2. It is highly effective when used in the processing of thin film electrodes that contain at least a part of the conductor or the conductor of precious metals. In other words, when chemically etching these thin film electrodes,
In addition to the complexity of the process as described above, it is difficult to manage the operating conditions during etching with a chemical solution, and etching takes a long time.However, according to the present invention, the type of laser light source By selecting the output and output, processing can be performed extremely easily.
次に本発明を実施例により説明すると以下の通りである
。Next, the present invention will be explained using examples as follows.
図１は、レーザ光照射により加工された薄膜電極の例を
示すものであって、図中の３は分割された薄膜電極の一
区分であり４は分割線である。薄膜１１ｍ１ｕＳｎＯ２
躾１ａとＩＴＯ躾１ｂと／）’６ＪＲす、ガラス素板２
の上に真空蒸着（より形成されたものであり、薄膜電極
１の厚さは約１０００人、ガラス素板２の厚さは０．７
−である。加工条件は、レーザ光源としてＹＡＧパルス
レーザを用い、Ｌ／−＋ｆパ’）−を３．２Ｗ、パルス
屑ｗｔ数１０ＫＨ２とし、薄膜電極１上に照射したレー
ザ光を該薄膜電極１の面上で速１１５０ Ｉ−／ Ｓｅ
ｃで走査させる。この結果レーザ光が照射された部分の
前記薄膜電極は線幅的１００μで分割され、かつガラス
素板にはほとんど損傷が見られなかった。薄膜電極１の
材質や厚みが上記と興なる場合は、レーザ光源の種類・
パワー・走査速度等を適宜変更することにより同様の加
工を行なうことができる。FIG. 1 shows an example of a thin film electrode processed by laser beam irradiation, and 3 in the figure is one section of the divided thin film electrode, and 4 is a dividing line. Thin film 11ml1uSnO2
Shitai 1a and ITO Shitai 1b/)'6JR, glass base plate 2
The thickness of the thin film electrode 1 is about 1,000, and the thickness of the glass base plate 2 is 0.7.
− is. The processing conditions were as follows: A YAG pulse laser was used as the laser light source, L/-+fp')- was 3.2 W, and the number of pulse scraps was 10 KH2. Speed 1150 I-/Se
Scan with c. As a result, the thin film electrode in the portion irradiated with the laser beam was divided into 100 μm line width parts, and almost no damage was observed on the glass base plate. If the material and thickness of the thin film electrode 1 are different from those mentioned above, please check the type and thickness of the laser light source.
Similar processing can be performed by appropriately changing the power, scanning speed, etc.
本発明の方法で加工した薄膜電極は、アモルファス太陽
電池用電極や液晶表示板用電極として利用できる。とく
にペテ０接合型アモルファス太■電池では窓側電極とし
て３ｎ０２１１又は貴金属の躾を少くとも一部として含
む薄膜電極がしばしば用いられるので、本発明の適用が
大いに有効である。またａ−８ｉ Ｃ： Ｈ、ａ−８ｔ
Ｎ ： Ｈ、ａ−３ｉ ＣＮ：Ｈ等のドープ層を用い
るヘテロ接合太陽電池（特願昭５６−１１２５７１）に
おいては、ドープ層の抵抗が比較的大きい場合がありこ
の場合にはＩＴＯ＋５ｎ０２ の基板が特に有効になる
のであるが、５ｎ０２ は前述の如くエツチングしにく
いので、従来はそのパターン化が困離であった。The thin film electrode processed by the method of the present invention can be used as an electrode for an amorphous solar cell or an electrode for a liquid crystal display board. In particular, in PET0 junction type amorphous thick batteries, where a thin film electrode containing at least a portion of 3n0211 or a noble metal is often used as the window electrode, the application of the present invention is very effective. Also a-8i C: H, a-8t
In a heterojunction solar cell using a doped layer such as N:H or a-3i CN:H (Japanese Patent Application No. 112571/1982), the resistance of the doped layer may be relatively large, and in this case, an ITO+5n02 substrate is used. Although this is particularly effective, since 5n02 is difficult to etch as described above, it has been difficult to pattern it in the past.
本発明は、このような場合において特に有効である。加
えてアモルファス太陽電池の場合は、アモルファス層の
抵抗値が比較的高いため、薄膜電極の分割線幅が１００
μ程度と狭くても隣接電極間のリーク電流は無視するこ
とができ、寅用土何らの問題なしに本発明を適用できる
ものである。The present invention is particularly effective in such cases. In addition, in the case of amorphous solar cells, the resistance value of the amorphous layer is relatively high, so the dividing line width of the thin film electrode is 100
Even if the width is as narrow as μ, leakage current between adjacent electrodes can be ignored, and the present invention can be applied without any problems.
図２は、ガラス素板２上にＩＴＯ躾１ｂと５ｎ０２躾１
ａを形成して薄膜電極１となし、該薄膜電極１を本発明
の方法により分割加工した上でアモルファス太陽電池５
を形成し、最後に裏面電極６を設けたものを示す。アモ
ルファス太陽電池５はρ型ａ−８ＩＣ：ｌ−４５Ｂ、真
性ａ−８ｉ ：Ｈ５ｂ。Figure 2 shows ITO 1b and 5n02 1 on glass base plate 2.
a to form a thin film electrode 1, and after dividing the thin film electrode 1 by the method of the present invention, an amorphous solar cell 5 is formed.
is formed, and a back electrode 6 is provided at the end. The amorphous solar cell 5 is ρ type a-8IC: l-45B, and intrinsic a-8i: H5b.
０型ａ−８ｉ：Ｈ５ｃより成るヘテロ接合型ρ１ｎ太陽
電池である。This is a heterojunction type ρ1n solar cell composed of type 0 a-8i:H5c.
以上述べたように、本発明は従来のケミカルエツチング
による薄膜電極の加工の複雑さを大幅に改善するもので
、本発明によればケミカルエツチングのしにくい薄膜電
極であっても容易に形状分割できるのである。As described above, the present invention greatly improves the complexity of processing thin film electrodes using conventional chemical etching.According to the present invention, even thin film electrodes that are difficult to chemically etch can be easily divided into shapes. It is.
図１（Ａ）はガラス素板上に形成された薄膜電極を加工
した状態を示す平面図、同図（Ｂ）は同上の８−８線断
面図である。図２は本発明の方法で加工した薄膜電極上
にアモルファス太陽電池を形成した例を示すものである
。
１・・・薄膜電極、 １ａ・・・５ｎ０２
躾、１ｂ・・・ＩＴＯ躾、 ２・・・ガラス
素板、３・・・薄膜電極の一区分、 ４・・・分割線
、５・・・アモルファス太陽電池、FIG. 1(A) is a plan view showing a processed state of a thin film electrode formed on a glass base plate, and FIG. 1(B) is a sectional view taken along line 8-8 of the same. FIG. 2 shows an example in which an amorphous solar cell is formed on a thin film electrode processed by the method of the present invention. 1...Thin film electrode, 1a...5n02
Training, 1b... ITO training, 2... Glass base plate, 3... One section of thin film electrode, 4... Parting line, 5... Amorphous solar cell,
Claims (1)
を移動させて前記薄膜電極を線状に溶−・蒸発させ該薄
膜電極を任意の形状に分割することを特徴とする薄膜電
極の加工方法。 ２ 前記薄膜電極が、５ｎ０２ 躾、ＩＴＯとＳｎＯ
２との複合膜、ＩＴＯと貴金属との複合膜、又はＳｎＯ
２と貴金属との複合膜であることを特徴とする特許請求
のＩＩｌ！第１項記載の薄膜電極の加工方法。 ３ 前記薄膜電極が、ヘテロ接合型アモルファス太陽電
池の窓側に用いられるものであることを特徴とする特許
請求の範囲第１項又は第２項記載の薄膜電極の加工方法
。[Claims] 1. Irradiating a laser beam onto the surface of a thin film electrode, moving the position of the irradiation point, melting and evaporating the thin film electrode linearly, and dividing the thin film electrode into arbitrary shapes. A method for processing a thin film electrode characterized by: 2 The thin film electrode is made of 5n02, ITO and SnO.
Composite film with 2, composite film with ITO and noble metal, or SnO
IIl! of the patent, characterized in that it is a composite film of No. 2 and a noble metal! The method for processing a thin film electrode according to item 1. 3. The method of processing a thin film electrode according to claim 1 or 2, wherein the thin film electrode is used on the window side of a heterojunction type amorphous solar cell.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP923182A JPS58126613A (en) | 1982-01-22 | 1982-01-22 | Method of machining thin film electrode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP923182A JPS58126613A (en) | 1982-01-22 | 1982-01-22 | Method of machining thin film electrode |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58126613A true JPS58126613A (en) | 1983-07-28 |
| JPH0237047B2 JPH0237047B2 (en) | 1990-08-22 |
Family
ID=11714627
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP923182A Granted JPS58126613A (en) | 1982-01-22 | 1982-01-22 | Method of machining thin film electrode |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58126613A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05303916A (en) * | 1992-04-27 | 1993-11-16 | Futaba Corp | Manufacture of transparent conductive wiring film substrate |
| WO2005076292A1 (en) * | 2004-02-09 | 2005-08-18 | Asahi Glass Company, Limited | Method for forming transparent electrode |
| JP2015181424A (en) * | 2014-03-25 | 2015-10-22 | 大日本印刷株式会社 | Electrode for cell culture and method of producing the same |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS50126194A (en) * | 1974-03-22 | 1975-10-03 | ||
| JPS5130970A (en) * | 1974-09-10 | 1976-03-16 | Seiko Instr & Electronics | Pataandenkyoku no keiseihoho |
-
1982
- 1982-01-22 JP JP923182A patent/JPS58126613A/en active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS50126194A (en) * | 1974-03-22 | 1975-10-03 | ||
| JPS5130970A (en) * | 1974-09-10 | 1976-03-16 | Seiko Instr & Electronics | Pataandenkyoku no keiseihoho |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05303916A (en) * | 1992-04-27 | 1993-11-16 | Futaba Corp | Manufacture of transparent conductive wiring film substrate |
| WO2005076292A1 (en) * | 2004-02-09 | 2005-08-18 | Asahi Glass Company, Limited | Method for forming transparent electrode |
| JPWO2005076292A1 (en) * | 2004-02-09 | 2007-10-18 | 旭硝子株式会社 | Manufacturing method of transparent electrode |
| KR100968389B1 (en) * | 2004-02-09 | 2010-07-07 | 아사히 가라스 가부시키가이샤 | Method for forming transparent electrode |
| JP4655939B2 (en) * | 2004-02-09 | 2011-03-23 | 旭硝子株式会社 | Manufacturing method of transparent electrode |
| JP2015181424A (en) * | 2014-03-25 | 2015-10-22 | 大日本印刷株式会社 | Electrode for cell culture and method of producing the same |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0237047B2 (en) | 1990-08-22 |
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