JPH0363570U - - Google Patents
Info
- Publication number
- JPH0363570U JPH0363570U JP12428589U JP12428589U JPH0363570U JP H0363570 U JPH0363570 U JP H0363570U JP 12428589 U JP12428589 U JP 12428589U JP 12428589 U JP12428589 U JP 12428589U JP H0363570 U JPH0363570 U JP H0363570U
- Authority
- JP
- Japan
- Prior art keywords
- processed
- vapor phase
- phase growth
- hollow susceptor
- blowing hole
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000001947 vapour-phase growth Methods 0.000 claims description 3
- 238000007664 blowing Methods 0.000 claims 2
- 239000007789 gas Substances 0.000 claims 2
- 238000010438 heat treatment Methods 0.000 claims 2
- 239000011261 inert gas Substances 0.000 claims 1
- 239000010453 quartz Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Electrodes Of Semiconductors (AREA)
- Chemical Vapour Deposition (AREA)
Description
第１図は本考案に係る気相成長装置の一例の部
分断面図であり、第２図は上記一例の要部拡大断
面図である。
１……中空サセプタ、２……ガス導入口、３…
…石英レンズ、４……赤外ランプ、５……ガス吹
き出し小孔、６……熱電対、７……ウエハ、８…
…反応室、９……クランプピン、１０……クラン
プ作動器、１１……ガスダクト。
FIG. 1 is a partial sectional view of an example of a vapor phase growth apparatus according to the present invention, and FIG. 2 is an enlarged sectional view of essential parts of the above example. 1...Hollow susceptor, 2...Gas inlet, 3...
...Quartz lens, 4...Infrared lamp, 5...Gas blowout hole, 6...Thermocouple, 7...Wafer, 8...
...Reaction chamber, 9...Clamp pin, 10...Clamp actuator, 11...Gas duct.
Claims (1)
る気相成長装置であつて、 中空サセプタの反応室内に臨んだ被処理体支持
面に上記被処理体の裏面に不活性ガスを供給する
ガス吹き出し小孔が設けられ、そのガス吹き出し
小孔を挿通する熱電対が上記中空サセプタに着脱
自在に設けられ、その熱電対の接点部が上記被処
理体の裏面に圧着されることを特徴とする気相成
長装置。[Scope of Claim for Utility Model Registration] A vapor phase growth apparatus that is equipped with a heating light source and is capable of heating an object to be processed, wherein the object to be processed is placed on the supporting surface of the object to be processed facing into the reaction chamber of a hollow susceptor. A gas blowing hole for supplying an inert gas is provided on the back surface of the hollow susceptor, and a thermocouple inserted through the gas blowing hole is detachably attached to the hollow susceptor, and the contact portion of the thermocouple is connected to the object to be processed. A vapor phase growth device characterized by being crimped onto the back side.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12428589U JPH0363570U (en) | 1989-10-24 | 1989-10-24 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12428589U JPH0363570U (en) | 1989-10-24 | 1989-10-24 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0363570U true JPH0363570U (en) | 1991-06-20 |
Family
ID=31672216
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12428589U Pending JPH0363570U (en) | 1989-10-24 | 1989-10-24 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0363570U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6604531B2 (en) | 2001-02-06 | 2003-08-12 | Kenji Nakamura | Antimicrobial and deodorant cosmetic brush and method |
-
1989
- 1989-10-24 JP JP12428589U patent/JPH0363570U/ja active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6604531B2 (en) | 2001-02-06 | 2003-08-12 | Kenji Nakamura | Antimicrobial and deodorant cosmetic brush and method |