JPH0357655A - Manufacture of thermal head - Google Patents
Manufacture of thermal headInfo
- Publication number
- JPH0357655A JPH0357655A JP19344689A JP19344689A JPH0357655A JP H0357655 A JPH0357655 A JP H0357655A JP 19344689 A JP19344689 A JP 19344689A JP 19344689 A JP19344689 A JP 19344689A JP H0357655 A JPH0357655 A JP H0357655A
- Authority
- JP
- Japan
- Prior art keywords
- film
- resistant film
- abrasion
- wear
- resistant
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 13
- 239000004020 conductor Substances 0.000 claims abstract description 15
- 238000005530 etching Methods 0.000 claims abstract description 10
- 238000000034 method Methods 0.000 claims abstract description 9
- 238000010438 heat treatment Methods 0.000 claims description 7
- 239000000758 substrate Substances 0.000 claims description 6
- 238000004544 sputter deposition Methods 0.000 abstract description 5
- 238000000206 photolithography Methods 0.000 abstract description 3
- 229910052581 Si3N4 Inorganic materials 0.000 abstract description 2
- 238000000992 sputter etching Methods 0.000 abstract description 2
- 238000005299 abrasion Methods 0.000 abstract 9
- 239000011248 coating agent Substances 0.000 description 7
- 238000000576 coating method Methods 0.000 description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 238000005260 corrosion Methods 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- KJFMBFZCATUALV-UHFFFAOYSA-N phenolphthalein Chemical compound C1=CC(O)=CC=C1C1(C=2C=CC(O)=CC=2)C2=CC=CC=C2C(=O)O1 KJFMBFZCATUALV-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明はサーマルヘッドの製造方法に関し、特に耐摩耗
層の信頼性を高めたサーマルヘソドの製造方法に関する
。DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention relates to a method for manufacturing a thermal head, and more particularly to a method for manufacturing a thermal head in which the reliability of the wear-resistant layer is improved.
〔従来の技術］
一般ニサーマルヘッドは、絶縁基板上に所要パターンの
抵抗体膜と導体膜を形成し、これらの膜を耐摩耗膜で被
覆した構戊とされている。[Prior Art] A general N-thermal head has a structure in which a resistor film and a conductor film in a desired pattern are formed on an insulating substrate, and these films are covered with a wear-resistant film.
第３図は従来のこの種のサーマルヘッドの製造方法を工
程順に示す図である．
先ず、第３図（ａ）のように、絶縁基板１上に抵抗体膜
２と導体膜３を形成する。そして、これらを第３図（ｂ
）のようにフォトリソグラフィ技術を用いてそれぞれ所
要パターンにエッチング形成する。ここで、発熱抵抗体
膜２のパターン形成は、先ず発熱抵抗体膜２と導体膜３
を所要パターンに形成した後、更に発熱抵抗体膜２上の
導体膜３のみを所要パターンに形成し、発熱抵抗パター
ン部２ａを形成する。Figure 3 is a diagram showing the conventional manufacturing method of this type of thermal head in the order of steps. First, as shown in FIG. 3(a), a resistor film 2 and a conductor film 3 are formed on an insulating substrate 1. Then, these are shown in Figure 3 (b
) The required patterns are etched using photolithography technology. Here, the pattern formation of the heat generating resistor film 2 is performed first by forming the heat generating resistor film 2 and the conductor film 3.
After forming into a required pattern, only the conductor film 3 on the heating resistor film 2 is further formed into a required pattern to form the heating resistor pattern portion 2a.
次いで、第３図（Ｃ）のように、ＴａｚＯｓやＳｔｓＮ
４等のように機械的な耐性に優れた耐摩耗膜４をスパッ
タ法等により全面に被着する。Next, as shown in Figure 3(C), TazOs and StsN
A wear-resistant film 4 having excellent mechanical resistance, such as No. 4, is deposited over the entire surface by sputtering or the like.
〔発明が解決しようとする課題）
上述した従来のサーマルヘッドは、発熱抵抗体膜２のパ
ターン境界部において導体膜３の急峻な段差が存在して
いる。このため、スパッタ法により被着される耐摩耗膜
４は、段差部で被着厚さが低減され、かつこの部分で第
３図（Ｃ）に破線Ｘで示すようにピンホール等が生じ、
耐摩耗膜４の連続性が損なわれて機械的な強度が低下さ
れる。[Problems to be Solved by the Invention] In the conventional thermal head described above, there is a steep step in the conductor film 3 at the pattern boundary of the heating resistor film 2. For this reason, the wear-resistant film 4 deposited by sputtering has a reduced thickness at the stepped portions, and pinholes and the like occur at these portions as shown by broken lines X in FIG. 3(C).
The continuity of the wear-resistant film 4 is impaired and its mechanical strength is reduced.
したがって、印字の際に強い圧力を受けると、段差部に
おいて耐摩耗膜４にクランクが生じ、膜剥がれが生じた
り、高湿度雰囲気中に放置されたときに導体膜（アルミ
ニウム）の腐蝕が生じ、サーマルヘッドの信頼性が低下
されるという問題がある．
本発明は耐摩耗膜におけるクラックの発生を防止して信
頼性を高めたサーマルヘッドの製造方法を提供すること
を目的とする。Therefore, if strong pressure is applied during printing, the wear-resistant film 4 may crack at the stepped portions, resulting in film peeling, or corrosion of the conductive film (aluminum) may occur when left in a high humidity atmosphere. There is a problem that the reliability of the thermal head is reduced. SUMMARY OF THE INVENTION An object of the present invention is to provide a method for manufacturing a thermal head that prevents the occurrence of cracks in the wear-resistant film and improves reliability.
本発明のサーマルヘッドの製造方法は、絶縁基板上に抵
抗体膜と導体膜を形成し、かつこれらを選択的にエッチ
ングして発熱抵抗体パターン部を形成する工程と、この
上に第１の耐摩耗膜を形成する工程と、この第１の耐摩
耗膜を適宜厚さにまでエッチングする工程と、この上に
第２の耐摩耗膜を形成する工程とを含んでいる。The method for manufacturing a thermal head according to the present invention includes the steps of forming a resistor film and a conductor film on an insulating substrate, and selectively etching these to form a heat generating resistor pattern portion, and a first step on this. The method includes a step of forming a wear-resistant film, a step of etching the first wear-resistant film to an appropriate thickness, and a step of forming a second wear-resistant film thereon.
この製造方法では、第１の耐摩耗膜に生じた段差を、そ
の厚さ低減のエッチングにより緩和させ、第２の耐摩耗
膜のカバリング性を改善し、抵抗体パターン部の端部に
おけるクランクの発生を防止する。In this manufacturing method, the step formed in the first wear-resistant film is alleviated by etching to reduce its thickness, the covering property of the second wear-resistant film is improved, and the crankshaft at the end of the resistor pattern is alleviated. Prevent occurrence.
次に、本発明を図面を参照して説明する。 Next, the present invention will be explained with reference to the drawings.
第１図（ａ）乃至（ｅ）は本発明の第１実施例を製造工
程順に示す断面図である。FIGS. 1(a) to 1(e) are cross-sectional views showing a first embodiment of the present invention in the order of manufacturing steps.
先ず、第１図（ａ）のように、図外のグレーズ膜を設け
たセラξツク等からなる絶縁基板１上に、ＴａＳｉＯｔ
からなる抵抗体膜２を０．１μｍの厚さに、その上にア
ルミニウムからなる導体膜３をｌμｍの厚さにそれぞれ
スパッタ法により形成する。First, as shown in FIG. 1(a), TaSiOt
A resistor film 2 made of aluminum is formed to a thickness of 0.1 .mu.m, and a conductor film 3 made of aluminum is formed thereon to a thickness of 1 .mu.m by sputtering.
次いで、第１図（ｂ）のように、抵抗体膜２と導体膜３
をフォトリソグラフィ技術によりエッチングして所要パ
ターンとし、更に抵抗体膜２上の導体膜３を選択的にエ
ッチングして発熱抵抗体パターン部２ａを形成する．こ
の状態では、この発熱抵抗体パターン部２ａの境界部に
導体膜３による略１μｍの垂直壁からなる段差が生じて
いることになる。Next, as shown in FIG. 1(b), the resistor film 2 and the conductor film 3 are
is etched using photolithography technology to form a desired pattern, and further the conductor film 3 on the resistor film 2 is selectively etched to form the heating resistor pattern portion 2a. In this state, a step consisting of a vertical wall of about 1 μm formed by the conductor film 3 is formed at the boundary of the heating resistor pattern portion 2a.
次に、第１図（Ｃ）のように、Ｓｉ３Ｎ４膜からなる耐
摩耗膜（第１の耐摩耗膜）４を３μｍの厚さで全面にス
バッタ形成する。このとき、多少のピンホールＸ等が生
じることはある。その上で、この耐摩耗膜４に対してＡ
ｒガスを用いたイオンエッチングを行い、耐摩耗膜４の
厚さをｌμｍ除去することにより、第１図（ｄ）のよう
に、耐摩耗膜４は２μｍの厚さとなる．かつ、このとき
段差の角部が削られるとともに、再付着粒子によって段
差の下部が埋められるため、急峻な段差が緩和される。Next, as shown in FIG. 1C, a wear-resistant film (first wear-resistant film) 4 made of a Si3N4 film is sputter-formed on the entire surface to a thickness of 3 μm. At this time, some pinholes X etc. may occur. On top of that, A for this wear-resistant film 4
By performing ion etching using r gas and removing 1 μm of the thickness of the wear-resistant film 4, the wear-resistant film 4 becomes 2 μm thick, as shown in FIG. 1(d). In addition, at this time, the corners of the step are scraped and the lower part of the step is filled with redeposited particles, so that the steep step is alleviated.
この例では段差の角度は６０゜に緩和されている。In this example, the angle of the step is relaxed to 60°.
次いで、第１図（ｅ）のように、再度スパッタ法により
同じ耐摩耗ＩＩ！＜第２の耐摩耗膜）５を４μｍの厚さ
に全面に形成する。これにより、全部の厚さが６μｍの
耐摩耗膜が完威される。Next, as shown in FIG. 1(e), the same wear resistance II! is applied again by sputtering. <Second wear-resistant film) 5 is formed to a thickness of 4 μm over the entire surface. This completes the wear-resistant film with a total thickness of 6 μm.
このように形成された耐摩耗膜は、先に形成した耐摩耗
膜４がイオンエッチングされて段差が緩和されているた
め、上側に形成される耐摩耗膜５の被着性が改善され、
段差において連続性に優れて機械的強度が高められる．
これにより、印字゛の際に強い圧力を受けたときにも、
耐摩耗膜５にクラックが生じることはなく、膜剥がれや
導体膜の腐蝕が防止され、サーマルヘッドの信頼性が改
善される．
なお、このように形成したサーマルヘッドをフェノール
フタレイン液を用いたピンホールチェック及び過圧プラ
テン圧力下で印字耐久性の試験を行って従来のサーマル
ヘッドと比較したところ、本発明方法のサーマルヘッド
は従来に比較して約２倍の耐久性（走行距離）を得るこ
とが確認された。In the wear-resistant film formed in this way, the previously formed wear-resistant film 4 is ion-etched to reduce the level difference, so that the adhesion of the wear-resistant film 5 formed on the upper side is improved.
It has excellent continuity on steps and increases mechanical strength.
As a result, even when subjected to strong pressure during printing,
Cracks do not occur in the wear-resistant film 5, and peeling of the film and corrosion of the conductor film are prevented, and the reliability of the thermal head is improved. The thermal head formed in this way was compared with a conventional thermal head by pinhole checking using phenolphthalein liquid and printing durability test under overpressure platen pressure. It was confirmed that the durability (running distance) was approximately twice as long as that of the conventional model.
第２図（ａ）乃至（ｅ）は本発明の第２実施例を工程順
に示す断面図である。FIGS. 2(a) to 2(e) are sectional views showing a second embodiment of the present invention in the order of steps.
先ず、第２図（ａ）のように、絶縁基板１上に抵抗膜２
と導体膜３を形成し、これを第ｌ実施例と同様にパター
ン形成する。First, as shown in FIG. 2(a), a resistive film 2 is placed on an insulating substrate 1.
A conductive film 3 is formed and patterned in the same manner as in the first embodiment.
次いで、第２図（ｂ）のように、全面に耐摩耗膜（第１
の耐摩耗膜）４を３μｍの厚さにスバッタ形成する。Next, as shown in FIG. 2(b), a wear-resistant film (the first
A wear-resistant film) 4 was spatter-formed to a thickness of 3 μm.
次に、第２図（Ｃ）のように、フォトレジストからなる
塗布膜６を２μｍの厚さに塗布形成し、かつ０２とＣＦ
，のｌ：１の混合ガスを用いて塗布膜６の全部と耐摩耗
膜４としてのＴａ２０，を１μｍプラズマエッチングす
る。この結果、塗布膜６と耐摩耗膜４は共にエッチング
されるので、エッチングされた耐摩耗膜４の表面は、第
２図．（ｄ）のように、充分滑らかな形状となる。Next, as shown in FIG. 2(C), a coating film 6 made of photoresist is coated to a thickness of 2 μm, and 02 and CF
, the entire coating film 6 and the Ta 20 as the wear-resistant film 4 are plasma-etched to a thickness of 1 μm using a mixed gas of 1:1. As a result, both the coating film 6 and the wear-resistant film 4 are etched, so that the etched surface of the wear-resistant film 4 is as shown in FIG. As shown in (d), the shape is sufficiently smooth.
しかる後、第２図（ｅ）のように、全面に再度Ｔａ．Ｏ
，を４μｍの厚さにスパッタして耐摩耗膜（第２の耐摩
耗膜）５を形成し、この結果、全厚さが６μｍの耐摩耗
膜を形成する。After that, as shown in FIG. 2(e), Ta. O
, is sputtered to a thickness of 4 μm to form a wear-resistant film (second wear-resistant film) 5. As a result, a wear-resistant film with a total thickness of 6 μm is formed.
この製造方法では、フォトレジスト等の塗布膜を用いて
いるので、表面段差を更に改善できる。In this manufacturing method, since a coating film such as photoresist is used, the surface level difference can be further improved.
なお、フォトレジスト以外の他の塗布膜を用いることも
可能であるが、この場合でも耐摩耗膜の表面形状を滑ら
かにするためには、塗布膜と耐摩耗膜のエッチング速度
が１：１となるようにエッチング条件を選択することが
好ましい。Note that it is also possible to use a coating film other than photoresist, but even in this case, in order to make the surface shape of the wear-resistant film smooth, the etching rate of the coating film and the wear-resistant film must be 1:1. It is preferable to select etching conditions so as to achieve the following.
以上説明したように本発明は、発熱抵抗体パターン部上
に第１の耐摩耗膜を形成した後、この第１の耐摩耗膜を
適宜厚さにまでエッチングし、その後第２の耐摩耗膜を
形成しているので、第１の耐摩耗膜に生じた段差をエッ
チングにより緩和させ、第２の耐摩耗膜のカバリング性
を改善する。As explained above, in the present invention, after forming the first wear-resistant film on the heating resistor pattern portion, the first wear-resistant film is etched to an appropriate thickness, and then the second wear-resistant film is etched. Since the step formed in the first wear-resistant film is alleviated by etching, the covering property of the second wear-resistant film is improved.
これにより、抵抗体パターン部の端部における耐摩耗膜
の表面を滑らかにでき、ピンホールが少なくクラック等
の発生しない機械的強度に優れた高信頼性のサーマルヘ
ッドを得ることができる。As a result, the surface of the wear-resistant film at the end of the resistor pattern portion can be made smooth, and a highly reliable thermal head with excellent mechanical strength and few pinholes and no cracks can be obtained.
第１図（ａ）乃至（ｅ）は本発明の第１実施例を製造工
程順に示す断画図、第２図（ａ）乃至（ｅ）は本発明の
第２実施例を製造工程順に示す断面図、第３図（ａ）乃
至（Ｃ）は従来の製造方法を工程順に示す断面図である
。
ｌ・・・絶縁基板、２・・・抵抗体膜、３・・・導体膜
、４・・・耐摩耗膜（第ｌの耐摩耗膜）
５・・・耐摩耗膜（第
２の耐摩耗膜）
６・・・塗布膜。
第
■
図
第２
図
２ａFIGS. 1(a) to (e) are cross-sectional views showing the first embodiment of the present invention in the order of manufacturing steps, and FIGS. 2(a) to (e) are cross-sectional views showing the second embodiment of the present invention in the order of the manufacturing steps. 3(a) to 3(C) are cross-sectional views showing the conventional manufacturing method in the order of steps. 1... Insulating substrate, 2... Resistor film, 3... Conductor film, 4... Wear resistant film (lth wear resistant film) 5... Wear resistant film (second wear resistant film) Film) 6...Coating film. Figure ■ Figure 2 Figure 2a
Claims (1)
らを選択的にエッチングして発熱抵抗体パターン部を形
成する工程と、この上に第１の耐摩耗膜を形成する工程
と、この第１の耐摩耗膜を適宜厚さにまでエッチングす
る工程と、この上に第２の耐摩耗膜を形成する工程とを
含むことを特徴とするサーマルヘッドの製造方法。1. A step of forming a resistor film and a conductor film on an insulating substrate and selectively etching them to form a heating resistor pattern portion, and a step of forming a first wear-resistant film thereon. A method for manufacturing a thermal head, comprising the steps of: etching the first wear-resistant film to an appropriate thickness; and forming a second wear-resistant film thereon.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19344689A JPH0357655A (en) | 1989-07-26 | 1989-07-26 | Manufacture of thermal head |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19344689A JPH0357655A (en) | 1989-07-26 | 1989-07-26 | Manufacture of thermal head |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0357655A true JPH0357655A (en) | 1991-03-13 |
Family
ID=16308129
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP19344689A Pending JPH0357655A (en) | 1989-07-26 | 1989-07-26 | Manufacture of thermal head |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0357655A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008539915A (en) * | 2005-05-10 | 2008-11-20 | スポーツ アンド サポーツ リミテッド | corset |
-
1989
- 1989-07-26 JP JP19344689A patent/JPH0357655A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008539915A (en) * | 2005-05-10 | 2008-11-20 | スポーツ アンド サポーツ リミテッド | corset |
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