JPH0357043B2 - - Google Patents
Info
- Publication number
- JPH0357043B2 JPH0357043B2 JP24886889A JP24886889A JPH0357043B2 JP H0357043 B2 JPH0357043 B2 JP H0357043B2 JP 24886889 A JP24886889 A JP 24886889A JP 24886889 A JP24886889 A JP 24886889A JP H0357043 B2 JPH0357043 B2 JP H0357043B2
- Authority
- JP
- Japan
- Prior art keywords
- gas
- temperature
- amorphous
- silicon nitride
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 26
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 21
- 239000013078 crystal Substances 0.000 claims description 20
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 16
- 239000010936 titanium Substances 0.000 description 50
- 239000007789 gas Substances 0.000 description 35
- 238000004519 manufacturing process Methods 0.000 description 26
- 238000000151 deposition Methods 0.000 description 23
- 230000008021 deposition Effects 0.000 description 22
- 239000000758 substrate Substances 0.000 description 21
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 18
- 239000000463 material Substances 0.000 description 14
- 229910003902 SiCl 4 Inorganic materials 0.000 description 12
- 229910021417 amorphous silicon Inorganic materials 0.000 description 11
- 150000001875 compounds Chemical class 0.000 description 11
- 239000000843 powder Substances 0.000 description 11
- 229910052710 silicon Inorganic materials 0.000 description 11
- 239000010703 silicon Substances 0.000 description 10
- 229910052719 titanium Inorganic materials 0.000 description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 9
- 229910052757 nitrogen Inorganic materials 0.000 description 9
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 7
- 238000010586 diagram Methods 0.000 description 7
- 239000011248 coating agent Substances 0.000 description 6
- 238000000576 coating method Methods 0.000 description 6
- -1 TiCl 4 Inorganic materials 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 5
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 229910021419 crystalline silicon Inorganic materials 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- VXEGSRKPIUDPQT-UHFFFAOYSA-N 4-[4-(4-methoxyphenyl)piperazin-1-yl]aniline Chemical compound C1=CC(OC)=CC=C1N1CCN(C=2C=CC(N)=CC=2)CC1 VXEGSRKPIUDPQT-UHFFFAOYSA-N 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- 239000012159 carrier gas Substances 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 230000004907 flux Effects 0.000 description 3
- 238000001556 precipitation Methods 0.000 description 3
- 239000005049 silicon tetrachloride Substances 0.000 description 3
- XJDNKRIXUMDJCW-UHFFFAOYSA-J titanium tetrachloride Chemical compound Cl[Ti](Cl)(Cl)Cl XJDNKRIXUMDJCW-UHFFFAOYSA-J 0.000 description 3
- 238000004627 transmission electron microscopy Methods 0.000 description 3
- 239000012808 vapor phase Substances 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 229910003691 SiBr Inorganic materials 0.000 description 2
- 238000002441 X-ray diffraction Methods 0.000 description 2
- SLLGVCUQYRMELA-UHFFFAOYSA-N chlorosilicon Chemical compound Cl[Si] SLLGVCUQYRMELA-UHFFFAOYSA-N 0.000 description 2
- 238000000354 decomposition reaction Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 239000012071 phase Substances 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 206010003497 Asphyxia Diseases 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910017855 NH 4 F Inorganic materials 0.000 description 1
- 229910021383 artificial graphite Inorganic materials 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 125000001475 halogen functional group Chemical group 0.000 description 1
- 150000004678 hydrides Chemical class 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 150000002483 hydrogen compounds Chemical class 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 230000001376 precipitating effect Effects 0.000 description 1
- 239000003566 sealing material Substances 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
Landscapes
- Chemical Vapour Deposition (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP24886889A JPH02120213A (ja) | 1989-09-25 | 1989-09-25 | 窒化珪素塊状体 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP24886889A JPH02120213A (ja) | 1989-09-25 | 1989-09-25 | 窒化珪素塊状体 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP55121690A Division JPS5747706A (en) | 1980-09-04 | 1980-09-04 | Lump of silicon nitride containing ti and its manufacture |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH02120213A JPH02120213A (ja) | 1990-05-08 |
| JPH0357043B2 true JPH0357043B2 (enrdf_load_stackoverflow) | 1991-08-30 |
Family
ID=17184619
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP24886889A Granted JPH02120213A (ja) | 1989-09-25 | 1989-09-25 | 窒化珪素塊状体 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02120213A (enrdf_load_stackoverflow) |
-
1989
- 1989-09-25 JP JP24886889A patent/JPH02120213A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPH02120213A (ja) | 1990-05-08 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPH0217481B2 (enrdf_load_stackoverflow) | ||
| US4312923A (en) | Super hard-highly pure silicon nitrides, and a process and apparatus for producing the same | |
| US5993770A (en) | Silicon carbide fabrication | |
| US4594330A (en) | Fine amorphous powder and process for preparing fine powdery mixture of silicon nitride and silicon carbide | |
| US4346068A (en) | Process for preparing high-purity α-type silicon nitride | |
| US4613490A (en) | Process for preparing silicon nitride, silicon carbide or fine powdery mixture thereof | |
| JPS61232269A (ja) | 硼素含有炭化珪素粉末の製造法 | |
| JPS6111886B2 (enrdf_load_stackoverflow) | ||
| JPH0357074B2 (enrdf_load_stackoverflow) | ||
| JPH0940406A (ja) | 窒化珪素粉末及びその製造方法 | |
| JPH0323206A (ja) | 窒化アルミニウム粉末及びその製造方法 | |
| JPH0357043B2 (enrdf_load_stackoverflow) | ||
| JP2721678B2 (ja) | β−炭化珪素成形体及びその製造法 | |
| JPH0357075B2 (enrdf_load_stackoverflow) | ||
| US20020071803A1 (en) | Method of producing silicon carbide power | |
| JPS58199707A (ja) | 結晶質窒化ケイ素粉末の製法 | |
| JPS5930645B2 (ja) | 高純度α型窒化珪素の製造法 | |
| JPH01252780A (ja) | 窒化ホウ素被覆体及びその製造方法 | |
| US20020071804A1 (en) | Method of producing silicon carbide: high temperature sensor elements | |
| JPH0448722B2 (enrdf_load_stackoverflow) | ||
| JPS62105913A (ja) | 炭化けい素微粉末の製造方法 | |
| JPH0454610B2 (enrdf_load_stackoverflow) | ||
| JPS59184792A (ja) | ダイヤモンドの気相合成法 | |
| JPS6117764B2 (enrdf_load_stackoverflow) | ||
| JPS6046912A (ja) | 超微粒子状炭化けい素の製造方法 |