JPH0356670A - ターゲット材料の剥削装置 - Google Patents

ターゲット材料の剥削装置

Info

Publication number
JPH0356670A
JPH0356670A JP2110708A JP11070890A JPH0356670A JP H0356670 A JPH0356670 A JP H0356670A JP 2110708 A JP2110708 A JP 2110708A JP 11070890 A JP11070890 A JP 11070890A JP H0356670 A JPH0356670 A JP H0356670A
Authority
JP
Japan
Prior art keywords
target
cylindrical
axis
target material
laser beam
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2110708A
Other languages
English (en)
Japanese (ja)
Inventor
Willi Zander
ウイリ・ザンデル
Bernd Stritzker
ベルント・シュトリッツケル
Joachim Froehlingsdorf
ヨアヒム・フレーリンクスドルフ
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Forschungszentrum Juelich GmbH
Original Assignee
Forschungszentrum Juelich GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Forschungszentrum Juelich GmbH filed Critical Forschungszentrum Juelich GmbH
Publication of JPH0356670A publication Critical patent/JPH0356670A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/01—Manufacture or treatment
    • H10N60/0268—Manufacture or treatment of devices comprising copper oxide
    • H10N60/0296—Processes for depositing or forming copper oxide superconductor layers
    • H10N60/0521—Processes for depositing or forming copper oxide superconductor layers by pulsed laser deposition, e.g. laser sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C23C14/087—Oxides of copper or solid solutions thereof
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/28—Vacuum evaporation by wave energy or particle radiation
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S505/00—Superconductor technology: apparatus, material, process
    • Y10S505/725—Process of making or treating high tc, above 30 k, superconducting shaped material, article, or device
    • Y10S505/73—Vacuum treating or coating
    • Y10S505/732—Evaporative coating with superconducting material
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S505/00—Superconductor technology: apparatus, material, process
    • Y10S505/786—Manufacturing system or apparatus for making high temperature, i.e. tc greater than 30 k superconductor product, device, article or stock, i.e. which system or apparatus does not itself contain a superconducting component

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Manufacturing & Machinery (AREA)
  • Physical Vapour Deposition (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
JP2110708A 1989-05-02 1990-04-27 ターゲット材料の剥削装置 Pending JPH0356670A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE3914476.3 1989-05-02
DE3914476A DE3914476C1 (enExample) 1989-05-02 1989-05-02

Publications (1)

Publication Number Publication Date
JPH0356670A true JPH0356670A (ja) 1991-03-12

Family

ID=6379930

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2110708A Pending JPH0356670A (ja) 1989-05-02 1990-04-27 ターゲット材料の剥削装置

Country Status (4)

Country Link
US (1) US5084300A (enExample)
EP (1) EP0396099B1 (enExample)
JP (1) JPH0356670A (enExample)
DE (2) DE3914476C1 (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004509233A (ja) * 2000-09-20 2004-03-25 エイジーティ　ワン　プロプライエタリー　リミテッド レーザー切除による薄膜の蒸着
WO2005028696A1 (ja) * 2003-09-16 2005-03-31 Sumitomo Electric Industries, Ltd. 薄膜の製造方法ならびに薄膜線材の製造方法およびパルスレーザ蒸着装置

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5708252A (en) * 1986-09-26 1998-01-13 Semiconductor Energy Laboratory Co., Ltd. Excimer laser scanning system
US6149988A (en) * 1986-09-26 2000-11-21 Semiconductor Energy Laboratory Co., Ltd. Method and system of laser processing
US5200230A (en) * 1987-06-29 1993-04-06 Dunfries Investments Limited Laser coating process
US6261856B1 (en) 1987-09-16 2001-07-17 Semiconductor Energy Laboratory Co., Ltd. Method and system of laser processing
JP2597260B2 (ja) * 1990-07-03 1997-04-02 フラウンホツフアー―ゲゼルシヤフト ツル フエルデルング デル アンゲヴアンドテン フオルシユウング エー．フアウ． レ−ザ−パルス蒸着堆積による薄膜形成方法
US5578350A (en) * 1990-07-03 1996-11-26 Fraunhofer-Gesellschaft Method for depositing a thin layer on a substrate by laser pulse vapor deposition
DE4022817C1 (enExample) * 1990-07-18 1991-11-07 Deutsche Forschungsanstalt Fuer Luft- Und Raumfahrt Ev, 5300 Bonn, De
JPH0532494A (ja) * 1991-07-29 1993-02-09 Sumitomo Electric Ind Ltd 複合酸化物超電導薄膜の成膜方法
US5242706A (en) * 1991-07-31 1993-09-07 The United States Of America As Represented By The Secretary Of The Navy Laser-deposited biocompatible films and methods and apparatuses for producing same
US5227204A (en) * 1991-08-27 1993-07-13 Northeastern University Fabrication of ferrite films using laser deposition
DE4229399C2 (de) * 1992-09-03 1999-05-27 Deutsch Zentr Luft & Raumfahrt Verfahren und Vorrichtung zum Herstellen einer Funktionsstruktur eines Halbleiterbauelements
JP3255469B2 (ja) * 1992-11-30 2002-02-12 三菱電機株式会社 レーザ薄膜形成装置
GB2303379B (en) * 1992-11-30 1997-05-28 Mitsubishi Electric Corp Thin film forming apparatus using laser
US5405659A (en) * 1993-03-05 1995-04-11 University Of Puerto Rico Method and apparatus for removing material from a target by use of a ring-shaped elliptical laser beam and depositing the material onto a substrate
US5432313A (en) * 1993-06-23 1995-07-11 The United States Of America As Represented By The Secretary Of The Army Target configurations for increasing the size of films prepared by laser ablation
US5411772A (en) * 1994-01-25 1995-05-02 Rockwell International Corporation Method of laser ablation for uniform thin film deposition
DE4405598C1 (de) * 1994-02-22 1995-09-21 Deutsche Forsch Luft Raumfahrt Verfahren zum Beschichten und Beschichtungsvorrichtung
WO1996012389A1 (en) * 1994-10-18 1996-04-25 Edsi, Inc. Apparatus for depositing a layer of material on a substrate
AT402945B (de) * 1995-07-03 1997-09-25 Joanneum Research Forschungsge Verfahren und vorrichtung zur beschichtung der oberfläche eines substrats
DE10248962B4 (de) * 2002-10-21 2007-10-25 THEVA DüNNSCHICHTTECHNIK GMBH Verfahren zur Herstellung einer Hochtemperatur-Supraleiterschicht
US8378258B2 (en) * 2004-08-02 2013-02-19 Ipg Microsystems Llc System and method for laser machining
GB2419894B (en) * 2004-10-22 2009-08-26 Plasma Quest Ltd Sputtering system
ATE537277T1 (de) * 2008-08-25 2011-12-15 Solmates Bv Verfahren zur abscheidung eines materials
EP2910664B1 (en) * 2014-02-21 2019-04-03 Solmates B.V. Device for depositing a material by pulsed laser deposition and a method for depositing a material with the device
FI20155578A7 (fi) * 2015-08-10 2017-02-11 Picodeon Ltd Oy Menetelmä ohutkalvojen valmistamiseksi laserablaatiolla käyttämällä moniosaisia laserpulsseja rengasmaisen pyörivän kohtion kanssa

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3538298A (en) * 1968-07-17 1970-11-03 Gen Electric Method for balancing rotating objects with laser radiation
US4065656A (en) * 1975-06-30 1977-12-27 Corning Glass Works Electrical resistor and method of production
US4200382A (en) * 1978-08-30 1980-04-29 Polaroid Corporation Photographic processing roller and a novel method which utilizes a pulsed laser for manufacturing the roller
US4304978A (en) * 1978-10-05 1981-12-08 Coherent, Inc. Heat treating using a laser
US4281030A (en) * 1980-05-12 1981-07-28 Bell Telephone Laboratories, Incorporated Implantation of vaporized material on melted substrates
US4701592A (en) * 1980-11-17 1987-10-20 Rockwell International Corporation Laser assisted deposition and annealing
JPS58130443A (ja) * 1982-01-28 1983-08-03 Fuji Photo Film Co Ltd 磁気記録媒体の製造方法
US4427723A (en) * 1982-02-10 1984-01-24 Rockwell International Corporation Method and apparatus for laser-stimulated vacuum deposition and annealing technique
US4566936A (en) * 1984-11-05 1986-01-28 North American Philips Corporation Method of trimming precision resistors
US4756811A (en) * 1985-09-30 1988-07-12 Kabushiki Kaisha Toshiba Method for manufacturing bubble-mode optical recording media
US4816293A (en) * 1986-03-27 1989-03-28 Mitsubishi Denki Kabushiki Kaisha Process for coating a workpiece with a ceramic material
GB2208390B (en) * 1987-08-06 1991-03-27 Plessey Co Plc Thin film deposition process
US4874741A (en) * 1988-04-14 1989-10-17 The Research Foundation Of State University Of New York Non-enhanced laser evaporation of oxide superconductors
DE3822502C1 (enExample) * 1988-07-03 1989-08-24 Kernforschungsanlage Juelich Gmbh, 5170 Juelich, De
US5015492A (en) * 1989-04-03 1991-05-14 Rutgers University Method and apparatus for pulsed energy induced vapor deposition of thin films
US5019552A (en) * 1990-02-20 1991-05-28 The United States Of America As Represented By The United States Department Of Energy Long-laser-pulse method of producing thin films

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004509233A (ja) * 2000-09-20 2004-03-25 エイジーティ　ワン　プロプライエタリー　リミテッド レーザー切除による薄膜の蒸着
WO2005028696A1 (ja) * 2003-09-16 2005-03-31 Sumitomo Electric Industries, Ltd. 薄膜の製造方法ならびに薄膜線材の製造方法およびパルスレーザ蒸着装置

Also Published As

Publication number Publication date
DE59007423D1 (de) 1994-11-17
EP0396099A1 (de) 1990-11-07
EP0396099B1 (de) 1994-10-12
DE3914476C1 (enExample) 1990-06-21
US5084300A (en) 1992-01-28

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