JPH0355975B2 - - Google Patents
Info
- Publication number
- JPH0355975B2 JPH0355975B2 JP56209540A JP20954081A JPH0355975B2 JP H0355975 B2 JPH0355975 B2 JP H0355975B2 JP 56209540 A JP56209540 A JP 56209540A JP 20954081 A JP20954081 A JP 20954081A JP H0355975 B2 JPH0355975 B2 JP H0355975B2
- Authority
- JP
- Japan
- Prior art keywords
- electron beam
- silicon
- silicon layer
- electron
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 229910052710 silicon Inorganic materials 0.000 claims description 27
- 239000010703 silicon Substances 0.000 claims description 27
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 26
- 238000010894 electron beam technology Methods 0.000 claims description 24
- 239000012212 insulator Substances 0.000 claims description 6
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 5
- 230000001133 acceleration Effects 0.000 claims description 4
- 238000000137 annealing Methods 0.000 claims description 4
- 238000000034 method Methods 0.000 claims description 4
- 230000001678 irradiating effect Effects 0.000 claims description 2
- 229910021419 crystalline silicon Inorganic materials 0.000 claims 1
- 239000013078 crystal Substances 0.000 description 17
- 239000010410 layer Substances 0.000 description 16
- 238000002425 crystallisation Methods 0.000 description 6
- 230000008025 crystallization Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000007711 solidification Methods 0.000 description 2
- 230000008023 solidification Effects 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000005224 laser annealing Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/2636—Bombardment with radiation with high-energy radiation for heating, e.g. electron beam heating
Landscapes
- Physics & Mathematics (AREA)
- High Energy & Nuclear Physics (AREA)
- Engineering & Computer Science (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Recrystallisation Techniques (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20954081A JPS58112323A (ja) | 1981-12-26 | 1981-12-26 | 電子ビ−ムアニ−ル方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20954081A JPS58112323A (ja) | 1981-12-26 | 1981-12-26 | 電子ビ−ムアニ−ル方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58112323A JPS58112323A (ja) | 1983-07-04 |
| JPH0355975B2 true JPH0355975B2 (de) | 1991-08-27 |
Family
ID=16574492
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP20954081A Granted JPS58112323A (ja) | 1981-12-26 | 1981-12-26 | 電子ビ−ムアニ−ル方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58112323A (de) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59178719A (ja) * | 1983-03-30 | 1984-10-11 | Agency Of Ind Science & Technol | 電子ビームアニール方法 |
| JP2542928Y2 (ja) * | 1989-10-27 | 1997-07-30 | 日本電気アイシーマイコンシステム株式会社 | マスタスライス半導体装置 |
| JP2002110688A (ja) * | 2000-09-29 | 2002-04-12 | Canon Inc | Ｓｏｉの熱処理方法及び製造方法 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56142630A (en) * | 1980-04-09 | 1981-11-07 | Fujitsu Ltd | Manufacture of semiconductor device |
-
1981
- 1981-12-26 JP JP20954081A patent/JPS58112323A/ja active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56142630A (en) * | 1980-04-09 | 1981-11-07 | Fujitsu Ltd | Manufacture of semiconductor device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS58112323A (ja) | 1983-07-04 |
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