JPH0354476B2 - - Google Patents
Info
- Publication number
- JPH0354476B2 JPH0354476B2 JP56207736A JP20773681A JPH0354476B2 JP H0354476 B2 JPH0354476 B2 JP H0354476B2 JP 56207736 A JP56207736 A JP 56207736A JP 20773681 A JP20773681 A JP 20773681A JP H0354476 B2 JPH0354476 B2 JP H0354476B2
- Authority
- JP
- Japan
- Prior art keywords
- film
- forming
- mask
- semiconductor film
- entire surface
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/01—Manufacture or treatment
- H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
- H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
- H10D30/0312—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes
- H10D30/0314—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes of lateral top-gate TFTs comprising only a single gate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/01—Manufacture or treatment
- H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
- H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
- H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
- H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
- H10D30/6739—Conductor-insulator-semiconductor electrodes
Landscapes
- Formation Of Insulating Films (AREA)
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56207736A JPS58108774A (ja) | 1981-12-22 | 1981-12-22 | 薄膜トランジスタの製造方法 |
| GB08221029A GB2107115B (en) | 1981-07-17 | 1982-07-19 | Method of manufacturing insulated gate thin film effect transitors |
| US06/621,324 US4502204A (en) | 1981-07-17 | 1984-06-15 | Method of manufacturing insulated gate thin film field effect transistors |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56207736A JPS58108774A (ja) | 1981-12-22 | 1981-12-22 | 薄膜トランジスタの製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58108774A JPS58108774A (ja) | 1983-06-28 |
| JPH0354476B2 true JPH0354476B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1991-08-20 |
Family
ID=16544683
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56207736A Granted JPS58108774A (ja) | 1981-07-17 | 1981-12-22 | 薄膜トランジスタの製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58108774A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9960281B2 (en) | 2015-02-09 | 2018-05-01 | The Hong Kong University Of Science And Technology | Metal oxide thin film transistor with source and drain regions doped at room temperature |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4080721A (en) * | 1975-06-30 | 1978-03-28 | International Business Machines Corporation | Fabrication of semiconductor device |
-
1981
- 1981-12-22 JP JP56207736A patent/JPS58108774A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS58108774A (ja) | 1983-06-28 |