JPH0354334B2 - - Google Patents

Info

Publication number
JPH0354334B2
JPH0354334B2 JP7212583A JP7212583A JPH0354334B2 JP H0354334 B2 JPH0354334 B2 JP H0354334B2 JP 7212583 A JP7212583 A JP 7212583A JP 7212583 A JP7212583 A JP 7212583A JP H0354334 B2 JPH0354334 B2 JP H0354334B2
Authority
JP
Japan
Prior art keywords
poly
alkyl group
ketone
image forming
general formula
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP7212583A
Other languages
English (en)
Japanese (ja)
Other versions
JPS59198447A (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP58072125A priority Critical patent/JPS59198447A/ja
Publication of JPS59198447A publication Critical patent/JPS59198447A/ja
Publication of JPH0354334B2 publication Critical patent/JPH0354334B2/ja
Granted legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/038Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0384Macromolecular compounds which are rendered insoluble or differentially wettable with ethylenic or acetylenic bands in the main chain of the photopolymer

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
JP58072125A 1983-04-26 1983-04-26 輻射線感応性画像形成材料および画像形成方法 Granted JPS59198447A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58072125A JPS59198447A (ja) 1983-04-26 1983-04-26 輻射線感応性画像形成材料および画像形成方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58072125A JPS59198447A (ja) 1983-04-26 1983-04-26 輻射線感応性画像形成材料および画像形成方法

Publications (2)

Publication Number Publication Date
JPS59198447A JPS59198447A (ja) 1984-11-10
JPH0354334B2 true JPH0354334B2 (enExample) 1991-08-19

Family

ID=13480287

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58072125A Granted JPS59198447A (ja) 1983-04-26 1983-04-26 輻射線感応性画像形成材料および画像形成方法

Country Status (1)

Country Link
JP (1) JPS59198447A (enExample)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08262738A (ja) * 1995-03-27 1996-10-11 Agency Of Ind Science & Technol 微細パターン形成方法

Also Published As

Publication number Publication date
JPS59198447A (ja) 1984-11-10

Similar Documents

Publication Publication Date Title
CN1306340C (zh) 光刻胶组合物和形成光刻胶图像的方法
KR100940053B1 (ko) 광활성 화합물의 혼합물을 포함하는 원자외선리소그래피용 포토레지스트 조성물
DE60129024T2 (de) Zur bilderzeugung mit tiefer uv-strahlung geeignete photoresistzusammensetzung und diese verwendendes bilderzeugungsverfahren
JPS61144639A (ja) 放射線感応性組成物及びそれを用いたパタ−ン形成法
CN111948904B (zh) 光刻胶组合物、用它形成光刻图案的方法及其用途
TWI663476B (zh) 感放射線性或感光化射線性樹脂組成物以及使用其的抗蝕劑膜、空白罩幕、抗蝕劑圖案的形成方法、電子元件的製造方法及電子元件
JP4299670B2 (ja) ネガ型深紫外線フォトレジスト
US6562554B1 (en) Photoresist compositions with cyclic olefin polymers and hydrophobic non-steroidal multi-alicyclic additives
JPH0943848A (ja) レジスト材料及びレジストパターンの形成方法
US6251560B1 (en) Photoresist compositions with cyclic olefin polymers having lactone moiety
US6770720B2 (en) Organic polymer for organic anti-reflective coating layer and preparation thereof
TWI385487B (zh) 光阻劑組合物
US5401608A (en) Negative-working radiation-sensitive mixture and radiation-sensitive recording material produced therewith
KR102117291B1 (ko) 아미드 성분을 포함하는 포토레지스트
JP3901342B2 (ja) ポジ型感光性樹脂組成物
US5252430A (en) Fine pattern forming method
EP0410794A2 (en) Maleimide containing, negative working deep UV photoresist
KR20000047910A (ko) 단파장 이미지화에 특히 적합한 포토레지스트 조성물
JP3851440B2 (ja) ポジ型感光性組成物
JPH05249681A (ja) 酸分解性化合物及びそれを含有するポジ型感放射線性レジスト組成物
JPH0354334B2 (enExample)
JP2004537740A (ja) ミクロリソグラフィ用フォトレジスト組成物中の光酸発生剤
McCullough et al. Polydimethylglutarimide (PMGI) resist-a progress report
KR100524449B1 (ko) 패턴형성재료 및 패턴형성방법
JP2000112130A (ja) ポジ型感光性樹脂組成物