JPH0352217B2 - - Google Patents
Info
- Publication number
- JPH0352217B2 JPH0352217B2 JP58134030A JP13403083A JPH0352217B2 JP H0352217 B2 JPH0352217 B2 JP H0352217B2 JP 58134030 A JP58134030 A JP 58134030A JP 13403083 A JP13403083 A JP 13403083A JP H0352217 B2 JPH0352217 B2 JP H0352217B2
- Authority
- JP
- Japan
- Prior art keywords
- plasma
- transmission window
- gas
- wall
- generation chamber
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32357—Generation remote from the workpiece, e.g. down-stream
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Drying Of Semiconductors (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13403083A JPS6025234A (ja) | 1983-07-21 | 1983-07-21 | マイクロ波プラズマ処理装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13403083A JPS6025234A (ja) | 1983-07-21 | 1983-07-21 | マイクロ波プラズマ処理装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6025234A JPS6025234A (ja) | 1985-02-08 |
JPH0352217B2 true JPH0352217B2 (enrdf_load_stackoverflow) | 1991-08-09 |
Family
ID=15118732
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP13403083A Granted JPS6025234A (ja) | 1983-07-21 | 1983-07-21 | マイクロ波プラズマ処理装置 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6025234A (enrdf_load_stackoverflow) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62222638A (ja) * | 1986-03-20 | 1987-09-30 | Fujitsu Ltd | マイクロ波プラズマ処理装置 |
JPS62264623A (ja) * | 1986-05-13 | 1987-11-17 | Fujitsu Ltd | マイクロ波プラズマ処理装置 |
JPH0770522B2 (ja) * | 1987-03-06 | 1995-07-31 | 株式会社日立製作所 | プラズマ処理装置 |
JPH0475787A (ja) * | 1990-07-13 | 1992-03-10 | Sumitomo Metal Ind Ltd | 形鋼または鋼管溶接の入熱制御方法 |
JP2013186970A (ja) * | 2012-03-06 | 2013-09-19 | Ulvac Japan Ltd | プラズマ処理装置 |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58202532A (ja) * | 1982-05-21 | 1983-11-25 | Hitachi Ltd | マイクロ波プラズマ放電管 |
-
1983
- 1983-07-21 JP JP13403083A patent/JPS6025234A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS6025234A (ja) | 1985-02-08 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR890002732B1 (ko) | 마이크로파 프라즈마 처리방법 및 그 장치 | |
EP0237078B1 (en) | Downstream microwave plasma processing apparatus having an improved coupling structure between microwave and plasma | |
CN100587904C (zh) | 反应腔室内衬及包含该内衬的反应腔室 | |
US5364519A (en) | Microwave plasma processing process and apparatus | |
KR101069567B1 (ko) | 기판 처리 장치 | |
USRE36224E (en) | Microwave plasma processing process and apparatus | |
WO2021047375A1 (zh) | 等离子体系统以及过滤装置 | |
JPS6240728A (ja) | ドライエツチング装置 | |
JPH0352217B2 (enrdf_load_stackoverflow) | ||
WO2002013249A1 (fr) | Antenne radiale et appareil de traitement de plasma comportant cette derniere | |
JPH07272897A (ja) | マイクロ波プラズマ装置 | |
KR100262883B1 (ko) | 플라즈마 크리닝 방법 및 플라즈마 처리장치 | |
JP3341965B2 (ja) | 縦型同軸プラズマ処理装置 | |
JPH08148473A (ja) | プラズマ処理装置 | |
JP2967681B2 (ja) | マイクロ波プラズマ処理装置 | |
KR100263902B1 (ko) | 표면 파 플라즈마 식각장치 | |
JP4347986B2 (ja) | プラズマ処理装置 | |
US6551520B1 (en) | Exhausting method and means in a dry etching apparatus | |
JPH053734B2 (enrdf_load_stackoverflow) | ||
JPH07283203A (ja) | 表面処理装置 | |
JPS6370526A (ja) | マイクロ波プラズマ処理装置 | |
JP2000299306A (ja) | 誘導結合型プラズマエッチング装置 | |
JP2004304035A (ja) | プラズマ発生装置 | |
JPH0247851B2 (enrdf_load_stackoverflow) | ||
JPH03211726A (ja) | プラズマ処理装置 |