JPH0351288B2 - - Google Patents

Info

Publication number
JPH0351288B2
JPH0351288B2 JP60074375A JP7437585A JPH0351288B2 JP H0351288 B2 JPH0351288 B2 JP H0351288B2 JP 60074375 A JP60074375 A JP 60074375A JP 7437585 A JP7437585 A JP 7437585A JP H0351288 B2 JPH0351288 B2 JP H0351288B2
Authority
JP
Japan
Prior art keywords
electron beam
semiconductor
single crystal
film
crystal layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP60074375A
Other languages
English (en)
Japanese (ja)
Other versions
JPS61234034A (ja
Inventor
Tomoyasu Inoe
Hiroyuki Tango
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP60074375A priority Critical patent/JPS61234034A/ja
Priority to US06/762,374 priority patent/US4662949A/en
Priority to US06/904,942 priority patent/US4746803A/en
Publication of JPS61234034A publication Critical patent/JPS61234034A/ja
Publication of JPH0351288B2 publication Critical patent/JPH0351288B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10P14/2909—
    • H10P14/382—
    • H10P14/2905—
    • H10P14/2911—
    • H10P14/3238—
    • H10P14/3411—
    • H10P14/3418—
    • H10P14/3421—
    • H10P14/3458—
    • H10P14/3466—
    • H10P14/3818—
    • H10P95/90—

Landscapes

  • Recrystallisation Techniques (AREA)
JP60074375A 1985-02-15 1985-04-10 半導体単結晶層の製造方法 Granted JPS61234034A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP60074375A JPS61234034A (ja) 1985-04-10 1985-04-10 半導体単結晶層の製造方法
US06/762,374 US4662949A (en) 1985-02-15 1985-08-05 Method of forming a single crystal semiconductor layer from a non-single crystalline material by a shaped energy beam
US06/904,942 US4746803A (en) 1985-02-15 1986-09-08 Method of forming a single crystal semiconductor layer from a non-single-crystalline material and apparatus for forming the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60074375A JPS61234034A (ja) 1985-04-10 1985-04-10 半導体単結晶層の製造方法

Publications (2)

Publication Number Publication Date
JPS61234034A JPS61234034A (ja) 1986-10-18
JPH0351288B2 true JPH0351288B2 (enExample) 1991-08-06

Family

ID=13545357

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60074375A Granted JPS61234034A (ja) 1985-02-15 1985-04-10 半導体単結晶層の製造方法

Country Status (1)

Country Link
JP (1) JPS61234034A (enExample)

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58135629A (ja) * 1982-02-08 1983-08-12 Fujitsu Ltd 半導体装置の製造方法

Also Published As

Publication number Publication date
JPS61234034A (ja) 1986-10-18

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Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term