JPH0339379B2 - - Google Patents

Info

Publication number
JPH0339379B2
JPH0339379B2 JP60074376A JP7437685A JPH0339379B2 JP H0339379 B2 JPH0339379 B2 JP H0339379B2 JP 60074376 A JP60074376 A JP 60074376A JP 7437685 A JP7437685 A JP 7437685A JP H0339379 B2 JPH0339379 B2 JP H0339379B2
Authority
JP
Japan
Prior art keywords
electron beam
waveform
wave
modulation
deflection
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP60074376A
Other languages
English (en)
Japanese (ja)
Other versions
JPS61233954A (ja
Inventor
Tomoyasu Inoe
Toshihiko Hamazaki
Itsuki Higashinakagaha
Hiroyuki Tango
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP60074376A priority Critical patent/JPS61233954A/ja
Priority to US06/762,374 priority patent/US4662949A/en
Priority to US06/904,942 priority patent/US4746803A/en
Publication of JPS61233954A publication Critical patent/JPS61233954A/ja
Publication of JPH0339379B2 publication Critical patent/JPH0339379B2/ja
Granted legal-status Critical Current

Links

JP60074376A 1985-02-15 1985-04-10 電子ビ−ムアニ−ル装置 Granted JPS61233954A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP60074376A JPS61233954A (ja) 1985-04-10 1985-04-10 電子ビ−ムアニ−ル装置
US06/762,374 US4662949A (en) 1985-02-15 1985-08-05 Method of forming a single crystal semiconductor layer from a non-single crystalline material by a shaped energy beam
US06/904,942 US4746803A (en) 1985-02-15 1986-09-08 Method of forming a single crystal semiconductor layer from a non-single-crystalline material and apparatus for forming the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60074376A JPS61233954A (ja) 1985-04-10 1985-04-10 電子ビ−ムアニ−ル装置

Publications (2)

Publication Number Publication Date
JPS61233954A JPS61233954A (ja) 1986-10-18
JPH0339379B2 true JPH0339379B2 (enExample) 1991-06-13

Family

ID=13545383

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60074376A Granted JPS61233954A (ja) 1985-02-15 1985-04-10 電子ビ−ムアニ−ル装置

Country Status (1)

Country Link
JP (1) JPS61233954A (enExample)

Also Published As

Publication number Publication date
JPS61233954A (ja) 1986-10-18

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Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term