JPS61233954A - 電子ビ−ムアニ−ル装置 - Google Patents

電子ビ−ムアニ−ル装置

Info

Publication number
JPS61233954A
JPS61233954A JP60074376A JP7437685A JPS61233954A JP S61233954 A JPS61233954 A JP S61233954A JP 60074376 A JP60074376 A JP 60074376A JP 7437685 A JP7437685 A JP 7437685A JP S61233954 A JPS61233954 A JP S61233954A
Authority
JP
Japan
Prior art keywords
electron beam
modulation
waveform
annealing
frequency
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP60074376A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0339379B2 (enExample
Inventor
Tomoyasu Inoue
井上　知泰
Toshihiko Hamazaki
浜崎　利彦
Iwao Higashinakagaha
東中川　厳
Hiroyuki Tango
丹呉　浩侑
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP60074376A priority Critical patent/JPS61233954A/ja
Priority to US06/762,374 priority patent/US4662949A/en
Priority to US06/904,942 priority patent/US4746803A/en
Publication of JPS61233954A publication Critical patent/JPS61233954A/ja
Publication of JPH0339379B2 publication Critical patent/JPH0339379B2/ja
Granted legal-status Critical Current

Links

JP60074376A 1985-02-15 1985-04-10 電子ビ−ムアニ−ル装置 Granted JPS61233954A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP60074376A JPS61233954A (ja) 1985-04-10 1985-04-10 電子ビ−ムアニ−ル装置
US06/762,374 US4662949A (en) 1985-02-15 1985-08-05 Method of forming a single crystal semiconductor layer from a non-single crystalline material by a shaped energy beam
US06/904,942 US4746803A (en) 1985-02-15 1986-09-08 Method of forming a single crystal semiconductor layer from a non-single-crystalline material and apparatus for forming the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60074376A JPS61233954A (ja) 1985-04-10 1985-04-10 電子ビ−ムアニ−ル装置

Publications (2)

Publication Number Publication Date
JPS61233954A true JPS61233954A (ja) 1986-10-18
JPH0339379B2 JPH0339379B2 (enExample) 1991-06-13

Family

ID=13545383

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60074376A Granted JPS61233954A (ja) 1985-02-15 1985-04-10 電子ビ−ムアニ−ル装置

Country Status (1)

Country Link
JP (1) JPS61233954A (enExample)

Also Published As

Publication number Publication date
JPH0339379B2 (enExample) 1991-06-13

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