JPH0350832B2 - - Google Patents

Info

Publication number
JPH0350832B2
JPH0350832B2 JP2442582A JP2442582A JPH0350832B2 JP H0350832 B2 JPH0350832 B2 JP H0350832B2 JP 2442582 A JP2442582 A JP 2442582A JP 2442582 A JP2442582 A JP 2442582A JP H0350832 B2 JPH0350832 B2 JP H0350832B2
Authority
JP
Japan
Prior art keywords
sputtering
target
magnet
speed
center
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP2442582A
Other languages
English (en)
Japanese (ja)
Other versions
JPS58144474A (ja
Inventor
Hideo Matsuzaki
Masanobu Nakamura
Yojiro Takabe
Ryoji Oritsuki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP2442582A priority Critical patent/JPS58144474A/ja
Publication of JPS58144474A publication Critical patent/JPS58144474A/ja
Publication of JPH0350832B2 publication Critical patent/JPH0350832B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering
    • H01J37/3408—Planar magnetron sputtering

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
JP2442582A 1982-02-19 1982-02-19 スパツタリング装置 Granted JPS58144474A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2442582A JPS58144474A (ja) 1982-02-19 1982-02-19 スパツタリング装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2442582A JPS58144474A (ja) 1982-02-19 1982-02-19 スパツタリング装置

Publications (2)

Publication Number Publication Date
JPS58144474A JPS58144474A (ja) 1983-08-27
JPH0350832B2 true JPH0350832B2 (enrdf_load_html_response) 1991-08-02

Family

ID=12137792

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2442582A Granted JPS58144474A (ja) 1982-02-19 1982-02-19 スパツタリング装置

Country Status (1)

Country Link
JP (1) JPS58144474A (enrdf_load_html_response)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0718006B2 (ja) * 1983-11-30 1995-03-01 日本テキサス・インスツルメンツ株式会社 スパッタ装置
JPH0774438B2 (ja) * 1985-12-17 1995-08-09 ローム株式会社 マグネトロンスパッタにおける膜厚調整方法
JPH0752527B2 (ja) * 1986-08-18 1995-06-05 松下電器産業株式会社 光学情報記録再生デイスクの製造方法
JPH01123065A (ja) * 1987-11-05 1989-05-16 Fuji Electric Co Ltd 薄膜形成装置
JPH04308083A (ja) * 1991-04-06 1992-10-30 Japan Steel Works Ltd:The 薄膜の作成方法
JP4939709B2 (ja) * 2001-09-06 2012-05-30 アプライド マテリアルズ インコーポレイテッド スパッタリング装置のマグネトロンユニット及びスパッタリング装置
US8585873B2 (en) * 2004-10-16 2013-11-19 Aviza Technology Limited Methods and apparatus for sputtering
WO2012067183A1 (ja) * 2010-11-18 2012-05-24 株式会社アルバック 成膜装置及び成膜方法
JP6425431B2 (ja) * 2014-06-30 2018-11-21 株式会社アルバック スパッタリング方法

Also Published As

Publication number Publication date
JPS58144474A (ja) 1983-08-27

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