JPH035052B2 - - Google Patents

Info

Publication number
JPH035052B2
JPH035052B2 JP23603885A JP23603885A JPH035052B2 JP H035052 B2 JPH035052 B2 JP H035052B2 JP 23603885 A JP23603885 A JP 23603885A JP 23603885 A JP23603885 A JP 23603885A JP H035052 B2 JPH035052 B2 JP H035052B2
Authority
JP
Japan
Prior art keywords
molecular beam
opening
crucible
source material
impurities
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP23603885A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6294920A (ja
Inventor
Sumio Sakai
Shunichi Murakami
Tetsuo Ishida
Hitoaki Hirama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Anelva Corp
Original Assignee
Anelva Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Anelva Corp filed Critical Anelva Corp
Priority to JP23603885A priority Critical patent/JPS6294920A/ja
Publication of JPS6294920A publication Critical patent/JPS6294920A/ja
Publication of JPH035052B2 publication Critical patent/JPH035052B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Physical Vapour Deposition (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
JP23603885A 1985-10-22 1985-10-22 分子線発生源 Granted JPS6294920A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP23603885A JPS6294920A (ja) 1985-10-22 1985-10-22 分子線発生源

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP23603885A JPS6294920A (ja) 1985-10-22 1985-10-22 分子線発生源

Publications (2)

Publication Number Publication Date
JPS6294920A JPS6294920A (ja) 1987-05-01
JPH035052B2 true JPH035052B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1991-01-24

Family

ID=16994840

Family Applications (1)

Application Number Title Priority Date Filing Date
JP23603885A Granted JPS6294920A (ja) 1985-10-22 1985-10-22 分子線発生源

Country Status (1)

Country Link
JP (1) JPS6294920A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1762899A1 (en) 2005-09-12 2007-03-14 Ricoh Company, Ltd. Latent electrostatic image bearing member, and the method for producing the same, image forming method, image forming apparatus, and process cartridge

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1762899A1 (en) 2005-09-12 2007-03-14 Ricoh Company, Ltd. Latent electrostatic image bearing member, and the method for producing the same, image forming method, image forming apparatus, and process cartridge

Also Published As

Publication number Publication date
JPS6294920A (ja) 1987-05-01

Similar Documents

Publication Publication Date Title
US5077875A (en) Reactor vessel for the growth of heterojunction devices
US5250148A (en) Process for growing GaAs monocrystal film
JP3156326B2 (ja) 半導体成長装置およびそれによる半導体成長方法
US4239955A (en) Effusion cells for molecular beam epitaxy apparatus
US4181544A (en) Molecular beam method for processing a plurality of substrates
US4063974A (en) Planar reactive evaporation method for the deposition of compound semiconducting films
US4137865A (en) Molecular beam apparatus for processing a plurality of substrates
US5025751A (en) Solid film growth apparatus
JP3895410B2 (ja) Ｉｉｉ−ｖ族窒化物結晶膜を備えた素子、およびその製造方法
JPH035052B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JPS63226917A (ja) 半導体気相処理装置
JPS6329743Y2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JP2577544B2 (ja) 半導体装置の製造方法
JPS6225249B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JPS6233420A (ja) ガリウム砒素薄膜形成方法
JPH07142404A (ja) 選択成長用マスクの形成方法及びその除去方法
JP2567228B2 (ja) 半導体結晶のエピタキシャル成長法
JPS61260622A (ja) ＧａＡｓ単結晶薄膜の成長法
JPH01305890A (ja) 分子線結晶成長装置
JPS6272113A (ja) 分子線結晶成長装置
JPS6132414A (ja) 薄膜形成装置
JPH025512A (ja) 分子線エピタキシャル成長方法及び成長装置
JP2620578B2 (ja) 化合物半導体のエピタキシャル層の製造方法
JPS5895695A (ja) 分子線結晶成長装置
JP2753832B2 (ja) 第▲ｉｉｉ▼・ｖ族化合物半導体の気相成長法

Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term