JPH0350412B2 - - Google Patents
Info
- Publication number
- JPH0350412B2 JPH0350412B2 JP16183681A JP16183681A JPH0350412B2 JP H0350412 B2 JPH0350412 B2 JP H0350412B2 JP 16183681 A JP16183681 A JP 16183681A JP 16183681 A JP16183681 A JP 16183681A JP H0350412 B2 JPH0350412 B2 JP H0350412B2
- Authority
- JP
- Japan
- Prior art keywords
- etching
- vapor pressure
- gas
- sample
- voltage
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000005530 etching Methods 0.000 claims description 55
- 238000000034 method Methods 0.000 claims description 17
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 14
- 238000001312 dry etching Methods 0.000 claims description 14
- 238000001020 plasma etching Methods 0.000 claims description 12
- 239000000758 substrate Substances 0.000 claims description 5
- 239000004065 semiconductor Substances 0.000 description 37
- 239000007789 gas Substances 0.000 description 32
- 150000001875 compounds Chemical class 0.000 description 24
- 239000013078 crystal Substances 0.000 description 14
- 239000000470 constituent Substances 0.000 description 7
- 229920002120 photoresistant polymer Polymers 0.000 description 7
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 5
- 229910052799 carbon Inorganic materials 0.000 description 5
- 150000002366 halogen compounds Chemical class 0.000 description 5
- -1 hydrogen compound Chemical class 0.000 description 5
- 238000011109 contamination Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- 238000010884 ion-beam technique Methods 0.000 description 4
- 229920000642 polymer Polymers 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 3
- 150000004820 halides Chemical class 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 238000000879 optical micrograph Methods 0.000 description 3
- 239000012495 reaction gas Substances 0.000 description 3
- 229910052785 arsenic Inorganic materials 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 1
- 229910000673 Indium arsenide Inorganic materials 0.000 description 1
- 229910020667 PBr3 Inorganic materials 0.000 description 1
- 229910007709 ZnTe Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 150000002483 hydrogen compounds Chemical class 0.000 description 1
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 description 1
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000001000 micrograph Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- RLOWWWKZYUNIDI-UHFFFAOYSA-N phosphinic chloride Chemical compound ClP=O RLOWWWKZYUNIDI-UHFFFAOYSA-N 0.000 description 1
- IPNPIHIZVLFAFP-UHFFFAOYSA-N phosphorus tribromide Chemical compound BrP(Br)Br IPNPIHIZVLFAFP-UHFFFAOYSA-N 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052716 thallium Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16183681A JPS5863137A (ja) | 1981-10-09 | 1981-10-09 | 蒸気圧制御ドライエツチング方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16183681A JPS5863137A (ja) | 1981-10-09 | 1981-10-09 | 蒸気圧制御ドライエツチング方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5863137A JPS5863137A (ja) | 1983-04-14 |
| JPH0350412B2 true JPH0350412B2 (enrdf_load_stackoverflow) | 1991-08-01 |
Family
ID=15742849
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16183681A Granted JPS5863137A (ja) | 1981-10-09 | 1981-10-09 | 蒸気圧制御ドライエツチング方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5863137A (enrdf_load_stackoverflow) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62159432A (ja) * | 1986-01-08 | 1987-07-15 | Matsushita Electric Ind Co Ltd | ドライエツチング方法 |
| JPH0779098B2 (ja) * | 1986-07-01 | 1995-08-23 | 日本電信電話株式会社 | 化合物半導体のドライエツチング方法 |
| JP2614331B2 (ja) * | 1989-10-06 | 1997-05-28 | シャープ株式会社 | 半導体装置の製造方法 |
-
1981
- 1981-10-09 JP JP16183681A patent/JPS5863137A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5863137A (ja) | 1983-04-14 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| DE69027206T2 (de) | Verfahren zur bildung von epitaxialschichten | |
| US4264409A (en) | Contamination-free selective reactive ion etching or polycrystalline silicon against silicon dioxide | |
| US4640737A (en) | Dry etching method of compound semiconductor | |
| JPS63110726A (ja) | エツチング方法 | |
| US5145554A (en) | Method of anisotropic dry etching of thin film semiconductors | |
| JPH038580B2 (enrdf_load_stackoverflow) | ||
| JP3908898B2 (ja) | 炭素系材料のエッチング方法 | |
| US4246296A (en) | Controlling the properties of native films using selective growth chemistry | |
| JPH0350412B2 (enrdf_load_stackoverflow) | ||
| TW201901776A (zh) | 磊晶矽上之非晶矽的選擇性蝕刻 | |
| DE69330241T2 (de) | Trocken-Ätz-Verfahren für eine Silizium-Dünnschicht | |
| US4137141A (en) | Process for producing a silicon nitride diffusion barrier on a semiconductor substrate, particularly III-V semiconductor substrates | |
| JPS58101429A (ja) | ドライエツチング方法 | |
| US5194119A (en) | Method of anisotropic dry etching of thin film semiconductors | |
| Hallais et al. | Device quality GaAs grown at low temperature by the halide process | |
| JPS63124419A (ja) | ドライエツチング方法 | |
| US5275692A (en) | Method for fabricating integrated circuits | |
| JPH0214773B2 (enrdf_load_stackoverflow) | ||
| JP2717162B2 (ja) | 化合物半導体の構造形成方法 | |
| JPS62139335A (ja) | 表面清浄化方法 | |
| JPS61160939A (ja) | ドライエツチング後Ｓｉ表面損傷の乾式による除去方法 | |
| JPH02260422A (ja) | 銅薄膜のエッチング方法 | |
| KR0141417B1 (ko) | 주기율표 iii-v족 화합물 반도체의 건식 에칭방법 | |
| JP4350120B2 (ja) | ダイヤモンドのエッチング方法 | |
| JPH073826B2 (ja) | 半導体装置の製造方法 |