JPH0345896B2 - - Google Patents
Info
- Publication number
- JPH0345896B2 JPH0345896B2 JP59045103A JP4510384A JPH0345896B2 JP H0345896 B2 JPH0345896 B2 JP H0345896B2 JP 59045103 A JP59045103 A JP 59045103A JP 4510384 A JP4510384 A JP 4510384A JP H0345896 B2 JPH0345896 B2 JP H0345896B2
- Authority
- JP
- Japan
- Prior art keywords
- film
- boron
- hardness
- amorphous silicon
- protected
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
Landscapes
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Formation Of Insulating Films (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59045103A JPS60189226A (ja) | 1984-03-08 | 1984-03-08 | コ−テイング膜 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59045103A JPS60189226A (ja) | 1984-03-08 | 1984-03-08 | コ−テイング膜 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60189226A JPS60189226A (ja) | 1985-09-26 |
| JPH0345896B2 true JPH0345896B2 (https=) | 1991-07-12 |
Family
ID=12709949
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59045103A Granted JPS60189226A (ja) | 1984-03-08 | 1984-03-08 | コ−テイング膜 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60189226A (https=) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01283838A (ja) * | 1988-05-10 | 1989-11-15 | Toshiba Corp | 半導体装置 |
| WO2016204208A1 (ja) * | 2015-06-19 | 2016-12-22 | 株式会社村田製作所 | モジュールおよびその製造方法 |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS52111379A (en) * | 1976-03-16 | 1977-09-19 | Toshiba Corp | Semi-conductor device |
| JPS5831755B2 (ja) * | 1979-11-05 | 1983-07-08 | 株式会社日立製作所 | 電気絶縁用基体 |
| JPS5840831A (ja) * | 1982-08-13 | 1983-03-09 | Hitachi Ltd | 半導体装置 |
-
1984
- 1984-03-08 JP JP59045103A patent/JPS60189226A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS60189226A (ja) | 1985-09-26 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US5275850A (en) | Process for producing a magnetic disk having a metal containing hard carbon coating by plasma chemical vapor deposition under a negative self bias | |
| JPH0416853B2 (https=) | ||
| EP0330524A1 (en) | Improvements relating to the deposition of thin carbon films | |
| TW430882B (en) | Plasma film forming method | |
| JPH02290020A (ja) | 半導体装置の製造方法 | |
| JPH0345896B2 (https=) | ||
| JPH07268607A (ja) | ダイヤモンドライクカーボン薄膜を有する物品およびその製造方法 | |
| JP2623611B2 (ja) | 硬質炭素膜被覆を施した金属基体 | |
| JPS6248752B2 (https=) | ||
| JPS6218970B2 (https=) | ||
| JPS63150926A (ja) | ダイヤモンド状炭素膜の製膜法 | |
| JPH1038727A (ja) | 薄膜素子及びその製造方法 | |
| CN1459834A (zh) | 提高硼硅玻璃膜及氮化硅膜之间粘合强度的方法 | |
| JPH01203293A (ja) | ダイヤモンド結晶の形成方法 | |
| JPS6320446A (ja) | 窒化ホウ素膜の形成方法 | |
| JPH05102068A (ja) | ダイヤモンドを用いた電子デバイスの電極形成方法 | |
| US4243395A (en) | Method for precision grinding of hard, pointed materials | |
| JPH0778871B2 (ja) | 磁気ディスク | |
| JPS60221562A (ja) | 耐摩耗膜 | |
| US5650040A (en) | Interfacial etch of silica to improve adherence of noble metals | |
| JPH10326406A5 (https=) | ||
| JPS60145377A (ja) | 非晶質炭化珪素膜 | |
| JP2002217133A (ja) | バリアメタル膜の形成方法 | |
| JPH1112730A (ja) | クロミウム薄膜の製造方法 | |
| JP3196265B2 (ja) | 表面弾性波素子の電極の形成方法 |