JPH0345527B2 - - Google Patents

Info

Publication number
JPH0345527B2
JPH0345527B2 JP56071235A JP7123581A JPH0345527B2 JP H0345527 B2 JPH0345527 B2 JP H0345527B2 JP 56071235 A JP56071235 A JP 56071235A JP 7123581 A JP7123581 A JP 7123581A JP H0345527 B2 JPH0345527 B2 JP H0345527B2
Authority
JP
Japan
Prior art keywords
distortion
electron beam
exposed
field
amount
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP56071235A
Other languages
English (en)
Japanese (ja)
Other versions
JPS57186331A (en
Inventor
Sakae Myauchi
Nobuo Goto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Jeol Ltd
Original Assignee
Nihon Denshi KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nihon Denshi KK filed Critical Nihon Denshi KK
Priority to JP7123581A priority Critical patent/JPS57186331A/ja
Publication of JPS57186331A publication Critical patent/JPS57186331A/ja
Publication of JPH0345527B2 publication Critical patent/JPH0345527B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/304Controlling tubes by information coming from the objects or from the beam, e.g. correction signals
    • H01J37/3045Object or beam position registration

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electron Beam Exposure (AREA)
JP7123581A 1981-05-12 1981-05-12 Manufacture of semiconductor device Granted JPS57186331A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7123581A JPS57186331A (en) 1981-05-12 1981-05-12 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7123581A JPS57186331A (en) 1981-05-12 1981-05-12 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS57186331A JPS57186331A (en) 1982-11-16
JPH0345527B2 true JPH0345527B2 (enrdf_load_html_response) 1991-07-11

Family

ID=13454826

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7123581A Granted JPS57186331A (en) 1981-05-12 1981-05-12 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS57186331A (enrdf_load_html_response)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59178726A (ja) * 1983-03-29 1984-10-11 Toshiba Corp パタ−ン転写用マスクの製造方法
JPH0715874B2 (ja) * 1984-07-13 1995-02-22 株式会社日立製作所 電子線描画装置
JPS6258621A (ja) * 1985-09-09 1987-03-14 Toshiba Corp 微細パタ−ン形成方法
US4812661A (en) * 1986-08-20 1989-03-14 Hewlett-Packard Company Method and apparatus for hybrid I.C. lithography
JP2871627B2 (ja) * 1996-10-17 1999-03-17 日本電気株式会社 電子線露光方法及びその装置

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5534430A (en) * 1978-08-31 1980-03-11 Fujitsu Ltd Positioning method in electron beam exposure
JPS5640244A (en) * 1979-09-11 1981-04-16 Mitsubishi Electric Corp Beam scanning correction at electron beam exposure

Also Published As

Publication number Publication date
JPS57186331A (en) 1982-11-16

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