JPH0343788B2 - - Google Patents

Info

Publication number
JPH0343788B2
JPH0343788B2 JP57005709A JP570982A JPH0343788B2 JP H0343788 B2 JPH0343788 B2 JP H0343788B2 JP 57005709 A JP57005709 A JP 57005709A JP 570982 A JP570982 A JP 570982A JP H0343788 B2 JPH0343788 B2 JP H0343788B2
Authority
JP
Japan
Prior art keywords
fuse
film
rom
blown
stepped portion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP57005709A
Other languages
English (en)
Japanese (ja)
Other versions
JPS58123759A (ja
Inventor
Hajime Kamioka
Motoo Nakano
Takashi Iwai
Noriaki Sato
Mikio Takagi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP57005709A priority Critical patent/JPS58123759A/ja
Publication of JPS58123759A publication Critical patent/JPS58123759A/ja
Publication of JPH0343788B2 publication Critical patent/JPH0343788B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/525—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections
    • H01L23/5256—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections comprising fuses, i.e. connections having their state changed from conductive to non-conductive
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Semiconductor Memories (AREA)
  • Read Only Memory (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
JP57005709A 1982-01-18 1982-01-18 半導体記憶装置 Granted JPS58123759A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57005709A JPS58123759A (ja) 1982-01-18 1982-01-18 半導体記憶装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57005709A JPS58123759A (ja) 1982-01-18 1982-01-18 半導体記憶装置

Publications (2)

Publication Number Publication Date
JPS58123759A JPS58123759A (ja) 1983-07-23
JPH0343788B2 true JPH0343788B2 (enrdf_load_stackoverflow) 1991-07-03

Family

ID=11618639

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57005709A Granted JPS58123759A (ja) 1982-01-18 1982-01-18 半導体記憶装置

Country Status (1)

Country Link
JP (1) JPS58123759A (enrdf_load_stackoverflow)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2541533Y2 (ja) * 1990-01-11 1997-07-16 株式会社クラベ 防曇鏡
EP0563852A1 (en) * 1992-04-02 1993-10-06 Siemens Aktiengesellschaft Zag fuse for reduced blow-current applications
FR2723663B1 (fr) * 1994-08-10 1996-10-31 Motorola Semiconducteurs Dispositifs fusibles a semiconducteur
JPH11154706A (ja) * 1997-11-20 1999-06-08 Mitsubishi Electric Corp 半導体装置
JP4480649B2 (ja) * 2005-09-05 2010-06-16 富士通マイクロエレクトロニクス株式会社 ヒューズ素子及びその切断方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5617060A (en) * 1979-07-23 1981-02-18 Fujitsu Ltd Semiconductor device
JPS5633853A (en) * 1979-08-28 1981-04-04 Nec Corp Semiconductor device

Also Published As

Publication number Publication date
JPS58123759A (ja) 1983-07-23

Similar Documents

Publication Publication Date Title
US4881114A (en) Selectively formable vertical diode circuit element
US4876220A (en) Method of making programmable low impedance interconnect diode element
US4507757A (en) Avalanche fuse element in programmable memory
US4562639A (en) Process for making avalanche fuse element with isolated emitter
EP0250078B1 (en) Programmable low impedance interconnect circuit element
TWI441329B (zh) 反熔絲記憶格
US4507756A (en) Avalanche fuse element as programmable device
US6291836B1 (en) Method of operating a programmable, non-volatile memory device
US5049970A (en) High resistive element
JPS59168665A (ja) 半導体メモリ装置およびその製造方法
JPS6146980B2 (enrdf_load_stackoverflow)
EP0083211A2 (en) Semiconductor device with fuse
KR880005686A (ko) 반도체 기억장치 및 그의 제조 방법
KR0146284B1 (ko) 반도체 기판상의 가용성 링크 제조방법
JP2523488B2 (ja) 半導体記憶装置
EP0241046A2 (en) Semiconductor device having fuse-type memory element
JPH0343788B2 (enrdf_load_stackoverflow)
US4491857A (en) Avalanche fuse element with isolated emitter
US4153949A (en) Electrically programmable read-only-memory device
JPH0778872A (ja) 半導体集積回路
EP0089457A2 (en) Avalanche fuse element as programmable memory
JP2623121B2 (ja) マスクｒｏｍ
WO1997005652A1 (fr) Dispositif sram et procede de fabrication
JPS59103369A (ja) 半導体装置
JPS6140141B2 (enrdf_load_stackoverflow)