JPH0343773B2 - - Google Patents

Info

Publication number
JPH0343773B2
JPH0343773B2 JP57068676A JP6867682A JPH0343773B2 JP H0343773 B2 JPH0343773 B2 JP H0343773B2 JP 57068676 A JP57068676 A JP 57068676A JP 6867682 A JP6867682 A JP 6867682A JP H0343773 B2 JPH0343773 B2 JP H0343773B2
Authority
JP
Japan
Prior art keywords
reaction gas
conduit
expansion tube
workpiece
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP57068676A
Other languages
English (en)
Japanese (ja)
Other versions
JPS58186941A (ja
Inventor
Norio Kanai
Noriaki Yamamoto
Tsunehiko Tsubone
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP6867682A priority Critical patent/JPS58186941A/ja
Publication of JPS58186941A publication Critical patent/JPS58186941A/ja
Publication of JPH0343773B2 publication Critical patent/JPH0343773B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07 e.g. sealing of a cap to a base of a container

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
JP6867682A 1982-04-26 1982-04-26 半導体製造装置 Granted JPS58186941A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6867682A JPS58186941A (ja) 1982-04-26 1982-04-26 半導体製造装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6867682A JPS58186941A (ja) 1982-04-26 1982-04-26 半導体製造装置

Publications (2)

Publication Number Publication Date
JPS58186941A JPS58186941A (ja) 1983-11-01
JPH0343773B2 true JPH0343773B2 (enExample) 1991-07-03

Family

ID=13380551

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6867682A Granted JPS58186941A (ja) 1982-04-26 1982-04-26 半導体製造装置

Country Status (1)

Country Link
JP (1) JPS58186941A (enExample)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100610316B1 (ko) 2004-12-28 2006-08-09 동부일렉트로닉스 주식회사 반도체 웨이퍼 이온 주입 장치용 인듐 가스 공급 장치

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5835093B2 (ja) * 1978-06-13 1983-07-30 日本真空技術株式会社 ガス導入装置

Also Published As

Publication number Publication date
JPS58186941A (ja) 1983-11-01

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