JPH0343726Y2 - - Google Patents
Info
- Publication number
- JPH0343726Y2 JPH0343726Y2 JP1984186640U JP18664084U JPH0343726Y2 JP H0343726 Y2 JPH0343726 Y2 JP H0343726Y2 JP 1984186640 U JP1984186640 U JP 1984186640U JP 18664084 U JP18664084 U JP 18664084U JP H0343726 Y2 JPH0343726 Y2 JP H0343726Y2
- Authority
- JP
- Japan
- Prior art keywords
- plate
- alloy
- copper
- substrate
- bonding
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000758 substrate Substances 0.000 claims description 22
- 229910045601 alloy Inorganic materials 0.000 claims description 18
- 239000000956 alloy Substances 0.000 claims description 18
- 239000000463 material Substances 0.000 claims description 18
- 229910052751 metal Inorganic materials 0.000 claims description 17
- 239000002184 metal Substances 0.000 claims description 17
- 239000000919 ceramic Substances 0.000 claims description 15
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 12
- 229910000679 solder Inorganic materials 0.000 claims description 9
- 239000004020 conductor Substances 0.000 claims description 8
- 229910001182 Mo alloy Inorganic materials 0.000 claims description 7
- 229910052759 nickel Inorganic materials 0.000 claims description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 5
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 5
- 229910052802 copper Inorganic materials 0.000 claims description 5
- 239000010949 copper Substances 0.000 claims description 5
- WUUZKBJEUBFVMV-UHFFFAOYSA-N copper molybdenum Chemical compound [Cu].[Mo] WUUZKBJEUBFVMV-UHFFFAOYSA-N 0.000 claims description 5
- SBYXRAKIOMOBFF-UHFFFAOYSA-N copper tungsten Chemical compound [Cu].[W] SBYXRAKIOMOBFF-UHFFFAOYSA-N 0.000 claims description 5
- 229910052718 tin Inorganic materials 0.000 claims description 5
- 239000011135 tin Substances 0.000 claims description 4
- 238000007747 plating Methods 0.000 description 5
- 230000005540 biological transmission Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 230000000087 stabilizing effect Effects 0.000 description 2
- 229910000914 Mn alloy Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910001174 tin-lead alloy Inorganic materials 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
Landscapes
- Waveguides (AREA)
Description
【考案の詳細な説明】
（産業上の利用分野）
本考案は、例えば1GHz以上の高周波回路部品
の基板として使用される高周波回路用基板の構造
に関するものである。[Detailed Description of the Invention] (Industrial Application Field) The present invention relates to the structure of a high-frequency circuit board used as a board for high-frequency circuit components of 1 GHz or higher, for example.
（背景技術）
例えば衛星通信受信機のような高周波回路部品
は従来第２図に例示するような基板に取付けられ
ていた。図において、１１は金属又は合金（例、
銅等）より成る板状物で、その上に、セラミツク
板１３の上面に導体回路１４を構成し、裏面にメ
タライズ層１５を施した板状物を接合用合金
（例、はんだ、銀ロウ等）１６により接合して基
板が構成されている。導体回路１４には高周波電
子部品又は素子（例、高周波トランジスタ等）が
取付けられる。(Background Art) High frequency circuit components, such as a satellite communication receiver, have conventionally been mounted on a board as illustrated in FIG. In the figure, 11 is a metal or alloy (e.g.
A plate-like material made of a bonding alloy (e.g., solder, silver solder, etc.) on which a conductive circuit 14 is formed on the top surface of the ceramic plate 13 and a metallized layer 15 on the back surface. ) 16 to form a substrate. A high frequency electronic component or element (eg, a high frequency transistor, etc.) is attached to the conductor circuit 14.
このような基板では、金属又は合金より成る板
状物１１とセラミツク板１３とが直接接合用合金
１６により接合されているため、金属とセラミツ
クの熱膨張率の差が大きく、加熱接合が困難か、
又は接合後剥離し易いので、大きなセラミツク板
を金属又は合金より成る板状物に接合できなかつ
た。 In such a substrate, the plate-like material 11 made of metal or alloy and the ceramic plate 13 are directly bonded by the bonding alloy 16, so the difference in thermal expansion coefficient between the metal and the ceramic is large, making it difficult to heat bond. ,
Otherwise, it is difficult to bond a large ceramic plate to a plate-like object made of metal or alloy because it is easy to peel off after bonding.
（考案の開示）
本考案は、上記の問題点を解決するため成され
たもので、前記接合部における熱膨張率の差によ
る不適合を少くすることで大型の基板を構成で
き、なおかつ高周波信号の正確な伝送に不可欠の
接地電位の安定化が可能な構造を有する高周波回
路用基板を提供するのが目的である。(Disclosure of the invention) The present invention has been made to solve the above-mentioned problems, and it is possible to construct a large substrate by reducing the mismatch due to the difference in thermal expansion coefficient at the joint, and it is also possible to The purpose of the present invention is to provide a high-frequency circuit board having a structure capable of stabilizing the ground potential, which is essential for accurate transmission.
本考案は、銅−タングステン又は銅−モリブデ
ン合金板の上に、ニツケル、銅、すずおよびはん
だのうちより選ばれた少なくとも一種以上の金属
をめつきした板状物と、セラミツク板の上面に導
体回路を構成し、裏面にメタライズ層を施した基
板材とを接合用金属又は合金により接合して成
り、なおかつ前記板状物を接地電位とすることを
特徴とする高周波回路用基板である。 The present invention consists of a plate-like object in which at least one metal selected from nickel, copper, tin, and solder is plated on a copper-tungsten or copper-molybdenum alloy plate, and a conductor on the top surface of the ceramic plate. The present invention is a high-frequency circuit board comprising a circuit and a substrate material having a metallized layer on the back surface, bonded by a bonding metal or alloy, and characterized in that the plate-like object is set at a ground potential.
第１図は本考案の実施例を示す断面図である。
図において、Ａは基材となる板状物で、銅−タン
グステン又は銅−モリブデン合金板１の上に、ニ
ツケル、銅、すずおよびはんだのうちより選ばれ
た少なくとも一種以上の金属より成るめつき層
２、例えばニツケルめつき、又はニツケルめつき
の上にさらに銅、すずもしくははんだ（すず−鉛
合金）をめつき層を全面に施したものである。 FIG. 1 is a sectional view showing an embodiment of the present invention.
In the figure, A is a plate-like base material, which is plated on a copper-tungsten or copper-molybdenum alloy plate 1 made of at least one metal selected from nickel, copper, tin, and solder. Layer 2, for example, is nickel plating, or a layer of copper, tin, or solder (tin-lead alloy) is applied over the entire surface of the nickel plating.
又Ｂはセラミツク板３の上面に導体回路４を構
成し、裏面にメタライズ層（例、Mo−Mn合金
等）５を施した基板材である。 Further, B is a substrate material having a conductor circuit 4 formed on the upper surface of a ceramic plate 3 and a metallized layer (eg, Mo--Mn alloy, etc.) 5 on the back surface.
本考案の基板は、板状物Ａと基板材Ｂとが接合
用金属又は合金（例、はんだ、銀ロウ等）６によ
り接合されて構成される。 The substrate of the present invention is constructed by bonding a plate-like material A and a substrate material B with a bonding metal or alloy (eg, solder, silver solder, etc.) 6.
本考案において、板状物Ａの基材としてCu−
Ｗ、又はCu−Mo合金を用いるのは、これらの合
金は、熱膨張係数をセラミツクと同等に調整でき
るためである。 In the present invention, Cu-
The reason why W or a Cu-Mo alloy is used is that the coefficient of thermal expansion of these alloys can be adjusted to be equal to that of ceramic.
これらの合金としては、例えばCu−W80％、
Cu−Mo85％、Cu−Mo80％合金等が用いられ
る。 These alloys include, for example, Cu-W80%,
Cu-Mo 85%, Cu-Mo 80% alloy, etc. are used.
又この上にめつき層２を施すのは、セラミツク
基板材Ａとの接合用金属又は合金６により接合を
容易にするためで、それにより接合時の加熱温度
を低くすることができ、Cu−Ｗ又はCu−Mo合
金とセラミツクとの熱膨張率の差が大きくても接
合時の不適合を少なくすることができ、従つて大
型の基板でも構成可能となる。 Furthermore, the reason why the plating layer 2 is applied on this layer is to facilitate the bonding with the ceramic substrate material A using the metal or alloy 6 for bonding.This allows the heating temperature during bonding to be lowered, and the Cu- Even if there is a large difference in thermal expansion coefficient between W or Cu--Mo alloy and ceramic, incompatibility during bonding can be reduced, and therefore even large substrates can be constructed.
また、かように構成された本考案の基板におい
て、前記により大型化が可能になつた板状物Ａ全
体を接地電位とし、基板材Ｂを収容する金属ケー
スと等電位にすることで、前記基板材Ｂの周囲を
安定な接地電位で用い、前記基板材Ｂ上に形成さ
れた導体回路４を伝送する高周波信号の電位を安
定させることにより、1GHz以上の高周波信号に
対応できる高周波回路物品の基板が実現される。 In addition, in the substrate of the present invention configured as described above, the entire plate-like object A, which can be made larger as described above, is set to a ground potential and is made to have an equal potential with the metal case housing the board material B, thereby achieving the above-mentioned By using a stable ground potential around the substrate material B and stabilizing the potential of the high frequency signal transmitted through the conductor circuit 4 formed on the substrate material B, a high frequency circuit article that can handle high frequency signals of 1 GHz or more is provided. A substrate is realized.
実際に、第１図に示した構造の基板を製作し、
セラミツク板上の導体回路に高周波信号を伝送
し、その特性をネツトワークアナライザーにて測
定した結果、出力信号特性を示すS21の値が、第
３図に示したように、板状物の電位を接地電位と
しなかつた場合に生じていたピークがなくなるこ
とにより安定し、良好な伝送特性を有することが
確認できた。 Actually, we manufactured a board with the structure shown in Figure 1,
As a result of transmitting a high-frequency signal to a conductor circuit on a ceramic board and measuring its characteristics with a network analyzer, the value of S21 , which indicates the output signal characteristics, was found to be similar to the potential of the plate as shown in Figure 3. It was confirmed that the peak that occurred when the voltage was not set to the ground potential disappeared, resulting in stability and good transmission characteristics.
又本考案基板は、主として1GHz以上の高周波
回路部品の基板として使用される。 The substrate of the present invention is mainly used as a substrate for high frequency circuit components of 1 GHz or higher.
（考案の効果）
上述のように構成された本考案の高周波回路用
基板は次のような効果がある。(Effects of the invention) The high frequency circuit board of the invention configured as described above has the following effects.
基材となる板状物として銅−タングステン又は
銅−モリブデン合金板の上に、ニツケル、銅、す
ずおよびはんだのうちより選ばれた少なくとも一
種以上の金属をめつきした板状物を用いるから、
接合用金属又は合金との接合性が良く、セラミツ
ク基板材との接合時加熱が低温ですむので、板状
物の合金とセラミツクの熱膨張率の差が大きくて
も接合時の不適合を少なくし得、従つて大型の基
板でも構成可能となる。 Because the plate-like material used as the base material is a copper-tungsten or copper-molybdenum alloy plate plated with at least one metal selected from nickel, copper, tin, and solder.
It has good bonding properties with metals or alloys for bonding, and can be heated at a low temperature when bonding with ceramic substrate materials, so it reduces incompatibility during bonding even if there is a large difference in thermal expansion coefficient between the alloy and ceramic of the plate. Therefore, even a large substrate can be used.
また、上記により大型化が可能になつた板状物
の合金全面を金属めつきすることで、容易に接地
電位を設定することができ、前記板状物に接合さ
れるセラミツク基板上の導体回路を高速に伝送す
る信号の電位を安定に保つことができるので、主
として1GHz以上の高周波回路部品の基板として
の使用が可能となる。 In addition, by metal plating the entire surface of the alloy of the plate-shaped object, which has become possible to increase its size as described above, it is possible to easily set the ground potential, and the conductor circuit on the ceramic substrate bonded to the plate-shaped object can be easily set. Since the potential of signals transmitted at high speed can be kept stable, it can be used mainly as a substrate for high-frequency circuit components of 1 GHz or higher.
第１図は本考案の実施例を示す断面図である。
第２図は従来の基板の例を示す断面図である。第
３図は第１図に示す実施例による高周波信号の伝
送特性を示す。
１……銅−タングステン又は銅−モリブデン合
金、２……めつき層、３，１３……セラミツク
板、４，１４……導体回路、５，１５……ネタラ
イズ層、６……接合用金属又は合金、１１……金
属又は合金板、１６……接合用合金、Ａ……板状
物、Ｂ……基板材。
FIG. 1 is a sectional view showing an embodiment of the present invention.
FIG. 2 is a sectional view showing an example of a conventional substrate. FIG. 3 shows the transmission characteristics of high frequency signals according to the embodiment shown in FIG. 1... Copper-tungsten or copper-molybdenum alloy, 2... Plating layer, 3, 13... Ceramic plate, 4, 14... Conductor circuit, 5, 15... Neterizing layer, 6... Bonding metal or Alloy, 11... Metal or alloy plate, 16... Joining alloy, A... Plate-shaped object, B... Substrate material.
Claims (1)
上に、ニツケル、銅、すずおよびはんだのうちよ
り選ばれた少なくとも一種以上の金属を全面にめ
つきした板状物と、セラミツク板の上面に導体回
路を構成し、裏面にメタライズ層を施した基板材
とを接合用金属又は合金により接合して成り、前
記板状物を接地電位とすることを特徴とする高周
波回路用基板。 A copper-tungsten or copper-molybdenum alloy plate is plated with at least one metal selected from nickel, copper, tin, and solder, and a conductor circuit is formed on the top surface of the ceramic plate. 1. A high-frequency circuit board, characterized in that the plate-like material is bonded to a substrate material having a metallized layer on the back surface using a bonding metal or an alloy, and the plate-like material is set at a ground potential.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1984186640U JPH0343726Y2 (en) | 1984-12-07 | 1984-12-07 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1984186640U JPH0343726Y2 (en) | 1984-12-07 | 1984-12-07 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61100170U JPS61100170U (en) | 1986-06-26 |
| JPH0343726Y2 true JPH0343726Y2 (en) | 1991-09-12 |
Family
ID=30744101
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1984186640U Expired JPH0343726Y2 (en) | 1984-12-07 | 1984-12-07 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0343726Y2 (en) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6331940A (en) * | 1986-07-28 | 1988-02-10 | Nippon Telegr & Teleph Corp <Ntt> | Magnetic levitation conveyer device |
-
1984
- 1984-12-07 JP JP1984186640U patent/JPH0343726Y2/ja not_active Expired
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6331940A (en) * | 1986-07-28 | 1988-02-10 | Nippon Telegr & Teleph Corp <Ntt> | Magnetic levitation conveyer device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS61100170U (en) | 1986-06-26 |
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