JPH0342508B2 - - Google Patents
Info
- Publication number
- JPH0342508B2 JPH0342508B2 JP2802783A JP2802783A JPH0342508B2 JP H0342508 B2 JPH0342508 B2 JP H0342508B2 JP 2802783 A JP2802783 A JP 2802783A JP 2802783 A JP2802783 A JP 2802783A JP H0342508 B2 JPH0342508 B2 JP H0342508B2
- Authority
- JP
- Japan
- Prior art keywords
- cutting
- degrees
- compound semiconductor
- wafer
- chipping
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 claims description 17
- 238000005520 cutting process Methods 0.000 claims description 15
- 238000003776 cleavage reaction Methods 0.000 claims description 14
- 230000007017 scission Effects 0.000 claims description 14
- 150000001875 compounds Chemical class 0.000 claims description 12
- 238000000034 method Methods 0.000 claims description 9
- 239000013078 crystal Substances 0.000 claims description 5
- 235000012431 wafers Nutrition 0.000 description 13
- 230000002950 deficient Effects 0.000 description 6
- 238000009826 distribution Methods 0.000 description 3
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 2
- 239000002173 cutting fluid Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 229910005540 GaP Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- KWLSQQRRSAWBOQ-UHFFFAOYSA-N dipotassioarsanylpotassium Chemical compound [K][As]([K])[K] KWLSQQRRSAWBOQ-UHFFFAOYSA-N 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Dicing (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP58028027A JPS59152638A (ja) | 1983-02-21 | 1983-02-21 | 化合物半導体の切断方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP58028027A JPS59152638A (ja) | 1983-02-21 | 1983-02-21 | 化合物半導体の切断方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS59152638A JPS59152638A (ja) | 1984-08-31 |
JPH0342508B2 true JPH0342508B2 (ru) | 1991-06-27 |
Family
ID=12237256
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP58028027A Granted JPS59152638A (ja) | 1983-02-21 | 1983-02-21 | 化合物半導体の切断方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS59152638A (ru) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62105446A (ja) * | 1985-10-31 | 1987-05-15 | Sharp Corp | 半導体装置の製造方法 |
JPH0256987A (ja) * | 1988-02-23 | 1990-02-26 | Mitsubishi Electric Corp | 混成集積回路の実装方法 |
JP2002090566A (ja) | 2000-09-20 | 2002-03-27 | Furukawa Electric Co Ltd:The | 光導波回路装置 |
JP2005033196A (ja) * | 2003-06-19 | 2005-02-03 | Showa Denko Kk | 半導体ウエーハのダイシング方法および発光ダイオードチップ |
US7183137B2 (en) * | 2003-12-01 | 2007-02-27 | Taiwan Semiconductor Manufacturing Company | Method for dicing semiconductor wafers |
JP2008028139A (ja) * | 2006-07-21 | 2008-02-07 | Ricoh Co Ltd | 半導体チップの製造方法、面発光型半導体レーザ、面発光型半導体レーザアレイ、光走査装置及び画像形成装置 |
JP2008235521A (ja) | 2007-03-20 | 2008-10-02 | Sanyo Electric Co Ltd | 半導体基板の割断方法及び太陽電池の割断方法並びに太陽電池 |
JP6433644B2 (ja) * | 2013-06-07 | 2018-12-05 | シーメンス アクチエンゲゼルシヤフトSiemens Aktiengesellschaft | 半導体ウェハのダイシング方法 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4940671A (ru) * | 1972-08-24 | 1974-04-16 |
-
1983
- 1983-02-21 JP JP58028027A patent/JPS59152638A/ja active Granted
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4940671A (ru) * | 1972-08-24 | 1974-04-16 |
Also Published As
Publication number | Publication date |
---|---|
JPS59152638A (ja) | 1984-08-31 |
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