JPH0339997B2 - - Google Patents

Info

Publication number
JPH0339997B2
JPH0339997B2 JP59111738A JP11173884A JPH0339997B2 JP H0339997 B2 JPH0339997 B2 JP H0339997B2 JP 59111738 A JP59111738 A JP 59111738A JP 11173884 A JP11173884 A JP 11173884A JP H0339997 B2 JPH0339997 B2 JP H0339997B2
Authority
JP
Japan
Prior art keywords
film forming
substrate
forming chamber
compound crystal
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP59111738A
Other languages
English (en)
Japanese (ja)
Other versions
JPS60255693A (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP59111738A priority Critical patent/JPS60255693A/ja
Publication of JPS60255693A publication Critical patent/JPS60255693A/ja
Publication of JPH0339997B2 publication Critical patent/JPH0339997B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/46—Sulfur-, selenium- or tellurium-containing compounds
    • C30B29/48—AIIBVI compounds wherein A is Zn, Cd or Hg, and B is S, Se or Te

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Recrystallisation Techniques (AREA)
JP59111738A 1984-05-31 1984-05-31 化合物結晶膜の製造方法とその装置 Granted JPS60255693A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59111738A JPS60255693A (ja) 1984-05-31 1984-05-31 化合物結晶膜の製造方法とその装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59111738A JPS60255693A (ja) 1984-05-31 1984-05-31 化合物結晶膜の製造方法とその装置

Publications (2)

Publication Number Publication Date
JPS60255693A JPS60255693A (ja) 1985-12-17
JPH0339997B2 true JPH0339997B2 (enExample) 1991-06-17

Family

ID=14568930

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59111738A Granted JPS60255693A (ja) 1984-05-31 1984-05-31 化合物結晶膜の製造方法とその装置

Country Status (1)

Country Link
JP (1) JPS60255693A (enExample)

Also Published As

Publication number Publication date
JPS60255693A (ja) 1985-12-17

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