JPS60255693A - 化合物結晶膜の製造方法とその装置 - Google Patents

化合物結晶膜の製造方法とその装置

Info

Publication number
JPS60255693A
JPS60255693A JP59111738A JP11173884A JPS60255693A JP S60255693 A JPS60255693 A JP S60255693A JP 59111738 A JP59111738 A JP 59111738A JP 11173884 A JP11173884 A JP 11173884A JP S60255693 A JPS60255693 A JP S60255693A
Authority
JP
Japan
Prior art keywords
substrate
film forming
film
chamber
forming chamber
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59111738A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0339997B2 (enExample
Inventor
Hiroshi Fujiyasu
洋 藤安
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koito Manufacturing Co Ltd
Original Assignee
Koito Manufacturing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koito Manufacturing Co Ltd filed Critical Koito Manufacturing Co Ltd
Priority to JP59111738A priority Critical patent/JPS60255693A/ja
Publication of JPS60255693A publication Critical patent/JPS60255693A/ja
Publication of JPH0339997B2 publication Critical patent/JPH0339997B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/46—Sulfur-, selenium- or tellurium-containing compounds
    • C30B29/48—AIIBVI compounds wherein A is Zn, Cd or Hg, and B is S, Se or Te

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Recrystallisation Techniques (AREA)
JP59111738A 1984-05-31 1984-05-31 化合物結晶膜の製造方法とその装置 Granted JPS60255693A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59111738A JPS60255693A (ja) 1984-05-31 1984-05-31 化合物結晶膜の製造方法とその装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59111738A JPS60255693A (ja) 1984-05-31 1984-05-31 化合物結晶膜の製造方法とその装置

Publications (2)

Publication Number Publication Date
JPS60255693A true JPS60255693A (ja) 1985-12-17
JPH0339997B2 JPH0339997B2 (enExample) 1991-06-17

Family

ID=14568930

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59111738A Granted JPS60255693A (ja) 1984-05-31 1984-05-31 化合物結晶膜の製造方法とその装置

Country Status (1)

Country Link
JP (1) JPS60255693A (enExample)

Also Published As

Publication number Publication date
JPH0339997B2 (enExample) 1991-06-17

Similar Documents

Publication Publication Date Title
US4662981A (en) Method and apparatus for forming crystalline films of compounds
KR930007853B1 (ko) 진공 증발장치
KR101952501B1 (ko) 전이금속 칼코제나이드 이종 접합 박막, 이의 제조 방법 및 이의 제조 장치
JPH01305894A (ja) 薄膜結晶成長装置および成長方法
KR101105532B1 (ko) Ｒｔｓ를 이용한 ｃｉｇｓ 박막형 태양전지 제조장치
Pessa et al. Atomic layer epitaxy of CdTe on the polar (111) A and (111) B surfaces of CdTe substrates
US6391108B2 (en) Liquid phase growth method of silicon crystal, method of producing solar cell, and liquid phase growth apparatus
JPH0339997B2 (enExample)
CN1095769A (zh) 制取固体激光器用的晶体薄膜的方法和装置
US3997377A (en) Method of making a liquid phase epitaxial-layers of gallium phosphide on multiple wafers
JPS60251195A (ja) 化合物結晶膜の製造方法とその装置
JPH01280323A (ja) 気相エピタキシャル成長装置
GB2036590A (en) Process and apparatus for the production of ga a1 as:si epitaxial coatings
JPH0151479B2 (enExample)
JPS631747B2 (enExample)
JP3633186B2 (ja) 亜鉛を含むｉｉ−ｖｉ族化合物半導体膜の製造方法
JPH0564849B2 (enExample)
JPH05311400A (ja) ＨｇＣｄＴｅ薄膜の作製方法及びそれに用いる薄膜作製装置
JPH0669133A (ja) 気相成長装置
JPH0218383A (ja) ホットウォールエピタキシャル成長装置
JPH0483793A (ja) 気相成長装置
JPH07201743A (ja) 気相堆積装置
JPH02293391A (ja) ホットウォールエピタキシャル成長方法
JPH0266950A (ja) 気相エピタキシャル成長装置
JPS6390833A (ja) ２族および６族からなる化合物薄膜の製造方法